公开(公告)号：US20230245962A1

公开(公告)日：2023-08-03

申请号：US18298160

申请日：2023-04-10

Applicant: Rohm Co., Ltd.

Inventor： Koshun SAITO ,  Hiroyuki SAKAIRI ,  Yasufumi MATSUOKA ,  Kenichi YOSHIMOCHI

IPC: H01L23/495 ,  H01L23/00

CPC classification number: H01L23/49575 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/48 ,  H01L23/49503 ,  H01L2924/30107 ,  H01L2224/48245 ,  H01L2924/1033 ,  H01L2924/10271 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1067 ,  H01L2924/13091 ,  H01L2924/13064 ,  H01L2924/13055 ,  H01L2924/30101

Abstract: A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.

公开(公告)号：US20220102265A1

公开(公告)日：2022-03-31

申请号：US17643979

申请日：2021-12-13

Applicant: Rohm Co., Ltd.

Inventor： Koshun SAITO ,  Yasufumi MATSUOKA

IPC: H01L23/498 ,  H01L23/00 ,  H01L25/07 ,  H01L23/31

Abstract: A semiconductor device includes a semiconductor element, a first lead including a mounting portion for the semiconductor element and a first terminal portion connected to the mounting portion, and a sealing resin covering the semiconductor element and a portion of the first lead. The mounting portion has a mounting-portion front surface and a mounting-portion back surface opposite to each other in a thickness direction, with the semiconductor element mounted on the mounting-portion front surface. The sealing resin includes a resin front surface, a resin back surface and a resin side surface connecting the resin front surface and the resin back surface. The mounting-portion back surface of the first lead is flush with the resin back surface. The first terminal portion includes a first-terminal-portion back surface exposed from the resin back surface, in a manner such that the first-terminal-portion back surface extends to the resin side surface.

公开(公告)号：US20210335697A1

公开(公告)日：2021-10-28

申请号：US17371647

申请日：2021-07-09

Applicant: Rohm Co., Ltd.

Inventor： Koshun SAITO ,  Tsuyoshi TACHI

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00 ,  H01L29/778 ,  H01L29/20

Abstract: The semiconductor device includes a semiconductor element, a first lead, and a second lead. The semiconductor element has an element obverse surface and an element reverse surface spaced apart from each other in a thickness direction. The semiconductor element includes an electron transit layer disposed between the element obverse surface and the element reverse surface and formed of a nitride semiconductor, a first electrode disposed on the element obverse surface, and a second electrode disposed on the element reverse surface and electrically connected to the first electrode. The semiconductor element is mounted on the first lead, and the second electrode is joined to the first lead. The second lead is electrically connected to the first electrode. The semiconductor element is a transistor. The second lead is spaced apart from the first lead and is configured such that a main current to be subjected to switching flows therethrough.

公开(公告)号：US20200211937A1

公开(公告)日：2020-07-02

申请号：US16817211

申请日：2020-03-12

Applicant: ROHM CO., LTD.

Inventor： Koshun SAITO

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device includes a semiconductor element, leads, and an encapsulation resin covering a portion of each of the leads and the semiconductor element. Each of the leads includes an external connection portion projecting from a side surface of the encapsulation resin. The external connection portion of at least one of the leads has opposite ends in a width-wise direction that extends along the side surface of the encapsulation resin. The external connection portion includes two recesses arranged toward a center in the width-wise direction from the opposite ends. The two recesses extend from a distal surface toward the encapsulation resin. The opposite ends in the width-wise direction define an end connection part. The external connection portion includes a part between the two recesses defining a center connection part.

公开(公告)号：US20180012826A1

公开(公告)日：2018-01-11

申请号：US15643159

申请日：2017-07-06

Applicant: ROHM CO., LTD.

Inventor： Koshun SAITO ,  Katsuhiro IWAI

IPC: H01L23/495 ,  H01L21/48 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56

CPC classification number: H01L23/49513 ,  H01L21/4825 ,  H01L21/561 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/29111 ,  H01L2224/32013 ,  H01L2224/32245 ,  H01L2224/33505 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83815 ,  H01L2224/83986 ,  H01L2224/97 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/2076 ,  H01L2924/01026 ,  H01L2924/00

Abstract: An aspect of the present disclosure provides a method of manufacturing a semiconductor device. The method includes: preparing a first semiconductor element and a second semiconductor element, each of the first semiconductor element and the second semiconductor element having an element main surface and an element back surface that face opposite sides to each other; die bonding the element back surface of the first semiconductor element to a pad main surface by using a first solder; and die bonding the element back surface of the second semiconductor element to the pad main surface by using a second solder having a melting point lower than a melting point of the first solder, after die bonding the element back surface of the first semiconductor element to the pad main surface by using the first solder.

公开(公告)号：US20150097279A1

公开(公告)日：2015-04-09

申请号：US14570601

申请日：2014-12-15

Applicant: ROHM CO., LTD.

Inventor： Koshun SAITO

IPC: H01L23/495 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L23/49548 ,  H01L21/56 ,  H01L21/568 ,  H01L23/29 ,  H01L23/3114 ,  H01L23/495 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/13139 ,  H01L2224/16245 ,  H01L2224/27003 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29139 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40247 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/92225 ,  H01L2224/92255 ,  H01L2224/97 ,  H01L2924/01029 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15153 ,  H01L2924/1532 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes: a semiconductor chip including a main surface electrode; a first mounting lead; a second mounting lead; a connection lead which overlaps with the main surface electrode, the first mounting lead and the second mounting lead when viewed in a thickness direction of the semiconductor chip and makes electrical conduction between the main surface electrode, the first mounting lead and the second mounting lead; and a resin portion which covers the semiconductor chip, the first mounting lead and the second mounting lead, wherein the resin portion has a resin bottom lying on the same plane as a bottom of the first mounting lead and a bottom of the second mounting lead.

Abstract translation: 半导体器件包括：包括主表面电极的半导体芯片; 第一个安装线; 第二个安装线; 当从半导体芯片的厚度方向观察时，与主表面电极，第一安装引线和第二安装引线重叠的连接引线在主表面电极，第一安装引线和第二安装引线之间导通; 以及覆盖半导体芯片，第一安装引线和第二安装引线的树脂部分，其中树脂部分具有位于与第一安装引线的底部相同的平面上的树脂底部和第二安装引线的底部。

公开(公告)号：US20240282690A1

公开(公告)日：2024-08-22

申请号：US18652315

申请日：2024-05-01

Applicant: Rohm Co., Ltd.

Inventor： Kota ISE ,  Koshun SAITO

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/49838 ,  H01L23/3121 ,  H01L24/32 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2924/1815

Abstract: A semiconductor device includes a lead with a terminal, and a sealing resin partially covering the terminal. The lead includes a base and metal layer covering the base. The base has a first terminal-extending portion forming the terminal. The first terminal-extending portion, exposed from the sealing resin, extends in a first direction crossing the thickness direction. The first terminal-extending portion includes a first end facing in the first direction and a first side wall facing in a second direction crossing the thickness and first directions. The first side wall has, in the first direction, a first side closer to the first end, a second side closer to the sealing resin, and a third side between the first side and the second side. The metal layer, covering the first end, the first side and the second side, is provided at a location avoiding the third side.

公开(公告)号：US20240274513A1

公开(公告)日：2024-08-15

申请号：US18645947

申请日：2024-04-25

Applicant: Rohm Co., Ltd.

Inventor： Koshun SAITO ,  Hiroyuki SAKAIRI ,  Yasufumi MATSUOKA ,  Kenichi YOSHIMOCHI

IPC: H01L23/495 ,  H01L23/00

CPC classification number: H01L23/49575 ,  H01L23/49503 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/48 ,  H01L2224/48245 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1067 ,  H01L2924/13055 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/30101 ,  H01L2924/30107

Abstract: A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.

公开(公告)号：US20230245954A1

公开(公告)日：2023-08-03

申请号：US18004643

申请日：2021-06-25

Applicant: ROHM CO., LTD.

Inventor： Koshun SAITO

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/49513 ,  H01L24/32 ,  H01L24/40 ,  H01L24/83 ,  H01L24/37 ,  H01L23/49579 ,  H01L24/29 ,  H01L24/48 ,  H01L23/3107 ,  H01L24/84 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/40491 ,  H01L2224/83447 ,  H01L2224/37147 ,  H01L2224/40499 ,  H01L2224/29111 ,  H01L2224/48245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45124 ,  H01L24/45 ,  H01L2224/83815 ,  H01L2224/84815 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/73221 ,  H01L2224/92246

Abstract: A semiconductor device including a die pad, a semiconductor element, a first joining layer, a first conductive member, and a second joining layer. The die pad has an obverse surface facing in a thickness direction. The semiconductor element has a first electrode provided opposing the obverse surface, and a second electrode provided on the opposite side to the first electrode in the thickness direction. The first electrode is electrically joined to the obverse surface. The first joining layer electrically joins the first electrode and the obverse surface to each other. The first conductive member is electrically joined to the second electrode. The second joining layer electrically joins the first conductive member and the second electrode to each other. The melting point of the first joining layer is higher than the melting point of the second joining layer.

公开(公告)号：US20230238312A1

公开(公告)日：2023-07-27

申请号：US18296120

申请日：2023-04-05

Applicant: Rohm Co., Ltd.

Inventor： Koshun SAITO ,  Tsuyoshi TACHI

IPC: H01L23/495 ,  H01L29/20 ,  H01L29/778 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/49562 ,  H01L29/2003 ,  H01L29/7786 ,  H01L23/3121 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/13064 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/49175 ,  H01L2224/48175 ,  H01L2924/1033

Abstract: The semiconductor device includes a semiconductor element, a first lead, and a second lead. The semiconductor element has an element obverse surface and an element reverse surface spaced apart from each other in a thickness direction. The semiconductor element includes an electron transit layer disposed between the element obverse surface and the element reverse surface and formed of a nitride semiconductor, a first electrode disposed on the element obverse surface, and a second electrode disposed on the element reverse surface and electrically connected to the first electrode. The semiconductor element is mounted on the first lead, and the second electrode is joined to the first lead. The second lead is electrically connected to the first electrode. The semiconductor element is a transistor. The second lead is spaced apart from the first lead and is configured such that a main current to be subjected to switching flows therethrough.