GAP-FILLING METHOD
    5.
    发明申请
    GAP-FILLING METHOD 审中-公开

    公开(公告)号:US20190146346A1

    公开(公告)日:2019-05-16

    申请号:US16167568

    申请日:2018-10-23

    IPC分类号: G03F7/20 C08G61/10 C08G61/12

    摘要: A method of manufacturing a semiconductor device comprising: providing a semiconductor device substrate having a relief image on a surface of the substrate, the relief image having a plurality of gaps to be filled; applying a coating composition to the relief image to provide a coating layer, wherein the coating composition comprises (i) a polyarylene oligomer comprising as polymerized units one or more first monomers having two or more cyclopentadienone moieties and one or more second monomers having an aromatic moiety and two or more alkynyl moieties; wherein the polyarylene oligomer has a Mw of 1000 to 6000 Da, a PDI of 1 to 2, and a molar ratio of total first monomers to total second monomers of 1:>1; and (ii) one or more organic solvents; curing the coating layer to form a polyarylene film; patterning the polyarylene film; and transferring the pattern to the semiconductor device substrate.

    Gap-filling method
    7.
    发明授权

    公开(公告)号:US11042093B2

    公开(公告)日:2021-06-22

    申请号:US16167568

    申请日:2018-10-23

    IPC分类号: G03F7/20 C08G61/10 G03F7/09

    摘要: A method of manufacturing a semiconductor device comprising: providing a semiconductor device substrate having a relief image on a surface of the substrate, the relief image having a plurality of gaps to be filled; applying a coating composition to the relief image to provide a coating layer, wherein the coating composition comprises (i) a polyarylene oligomer comprising as polymerized units one or more first monomers having two or more cyclopentadienone moieties and one or more second monomers having an aromatic moiety and two or more alkynyl moieties; wherein the polyarylene oligomer has a Mw of 1000 to 6000 Da, a PDI of 1 to 2, and a molar ratio of total first monomers to total second monomers of 1:>1; and (ii) one or more organic solvents; curing the coating layer to form a polyarylene film; patterning the polyarylene film; and transferring the pattern to the semiconductor device substrate.