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    Gap-filling method
    1.
    发明授权
    Gap-filling method 有权

    公开(公告)号：US11042093B2

    公开(公告)日：2021-06-22

    申请号：US16167568

    申请日：2018-10-23

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： James F. Cameron ,  Keren Zhang ,  Li Cui ,  Daniel Greene ,  Shintaro Yamada

    IPC: G03F7/20 ,  C08G61/10 ,  G03F7/09

    Abstract: A method of manufacturing a semiconductor device comprising: providing a semiconductor device substrate having a relief image on a surface of the substrate, the relief image having a plurality of gaps to be filled; applying a coating composition to the relief image to provide a coating layer, wherein the coating composition comprises (i) a polyarylene oligomer comprising as polymerized units one or more first monomers having two or more cyclopentadienone moieties and one or more second monomers having an aromatic moiety and two or more alkynyl moieties; wherein the polyarylene oligomer has a Mw of 1000 to 6000 Da, a PDI of 1 to 2, and a molar ratio of total first monomers to total second monomers of 1:>1; and (ii) one or more organic solvents; curing the coating layer to form a polyarylene film; patterning the polyarylene film; and transferring the pattern to the semiconductor device substrate.

    GAP-FILLING METHOD
    6.
    发明申请
    GAP-FILLING METHOD 审中-公开

    公开(公告)号：US20190146346A1

    公开(公告)日：2019-05-16

    申请号：US16167568

    申请日：2018-10-23

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： James F. Cameron ,  Keren Zhang ,  Li Cui ,  Daniel Greene ,  Shintaro Yamada

    IPC: G03F7/20 ,  C08G61/10 ,  C08G61/12

    Abstract: A method of manufacturing a semiconductor device comprising: providing a semiconductor device substrate having a relief image on a surface of the substrate, the relief image having a plurality of gaps to be filled; applying a coating composition to the relief image to provide a coating layer, wherein the coating composition comprises (i) a polyarylene oligomer comprising as polymerized units one or more first monomers having two or more cyclopentadienone moieties and one or more second monomers having an aromatic moiety and two or more alkynyl moieties; wherein the polyarylene oligomer has a Mw of 1000 to 6000 Da, a PDI of 1 to 2, and a molar ratio of total first monomers to total second monomers of 1:>1; and (ii) one or more organic solvents; curing the coating layer to form a polyarylene film; patterning the polyarylene film; and transferring the pattern to the semiconductor device substrate.

    ADHESION PROMOTING PHOTORESIST UNDERLAYER COMPOSITION
    8.
    发明申请
    ADHESION PROMOTING PHOTORESIST UNDERLAYER COMPOSITION 有权

    公开(公告)号：US20220197143A1

    公开(公告)日：2022-06-23

    申请号：US17127434

    申请日：2020-12-18

    Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

    Inventor： Joshua Kaitz ,  Ke Yang ,  Keren Zhang ,  Li Cui ,  James F. Cameron ,  Dan B. Millward ,  Shintaro Yamada

    IPC: G03F7/11 ,  C09D171/00 ,  C08G65/40

    Abstract: A photoresist underlayer composition comprising a poly(arylene ether); an additive of formula (14): D-(L1-Ar—[X]n)m  (14); and a solvent, wherein, in formula (14), D is a substituted or unsubstituted C1-60 organic group, optionally wherein D is an organic acid salt of the substituted or unsubstituted C1-60 organic group; each L1 is independently a single bond or a divalent linking group, when L1 is a single bond, D may be a substituted or unsubstituted C3-30 cycloalkyl or substituted or unsubstituted C1-20 heterocycloalkyl that is optionally fused with Ar, each Ar is independently a monocyclic or polycyclic C5-60 aromatic group, each X is independently —OR30, —SR31, or —NR32R33, m is an integer of 1 to 6, each n is independently an integer of 0 to 5, provided that a sum of all n is 2 or greater, and R30 to R33 are as provided herein.

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