公开(公告)号：US08324971B2

公开(公告)日：2012-12-04

申请号：US13063314

申请日：2009-09-15

申请人： Roland Gesche ,  Ibrahim M. Khalil ,  Silvio Kuehn ,  Armin Liero

发明人： Roland Gesche ,  Ibrahim M. Khalil ,  Silvio Kuehn ,  Armin Liero

IPC分类号： H03F3/04

CPC分类号： H03F1/301 ,  H01L27/0255 ,  H03F1/306 ,  H03F1/3205 ,  H03F1/523 ,  H03F3/193 ,  H03F3/1935 ,  H03F2200/18 ,  H03F2200/444

摘要： The present invention is directed to a self-adjusting gate bias network for field effect transistors in radio frequency applications. A bias network for field effect transistors is provided comprising a field effect transistor having a source electrode connected to ground and a drain electrode connected to a load; a radio frequency network connected to the gate electrode; a gate bias network connected to the gate electrode; wherein a device having a non-linear characteristic is provided in series between the gate electrode and the gate bias network such that a forward bias current at the gate electrode of the field effect transistor is reduced or prevented.The reduction or prevention of a forward bias current leads in overdrive conditions to a self-adjustment of the bias point of the field-effect transistor improving the reduction of distortions of an amplifier or changing the class of oscillators connected to the gate electrode.

摘要翻译： 本发明涉及用于射频应用中的场效应晶体管的自调节栅极偏置网络。 提供了一种用于场效应晶体管的偏置网络，其包括具有连接到地的源极电极和连接到负载的漏电极的场效应晶体管; 连接到栅电极的射频网络; 连接到栅电极的栅偏置网; 其中具有非线性特性的器件串联地提供在栅电极和栅极偏压网络之间，使得场效应晶体管的栅电极处的正向偏置电流被减小或防止。 正向偏置电流的减少或防止导致过驱动条件下对场效应晶体管的偏置点进行自调节，从而改善了放大器失真的减小或者改变连接到栅电极的振荡器的类别。

公开(公告)号：US20110181324A1

公开(公告)日：2011-07-28

申请号：US13063314

申请日：2008-09-15

申请人： Roland Gesche ,  Ibrahim M. Khalil ,  Silvio Kuehn ,  Armin Liero

发明人： Roland Gesche ,  Ibrahim M. Khalil ,  Silvio Kuehn ,  Armin Liero

IPC分类号： H03K17/00

CPC分类号： H03F1/301 ,  H01L27/0255 ,  H03F1/306 ,  H03F1/3205 ,  H03F1/523 ,  H03F3/193 ,  H03F3/1935 ,  H03F2200/18 ,  H03F2200/444

摘要： The present invention is directed to a self-adjusting gate bias network for field effect transistors in radio frequency applications. A bias network for field effect transistors is provided comprising a field effect transistor having a source electrode connected to ground and a drain electrode connected to a load; a radio frequency network connected to the gate electrode; a gate bias network connected to the gate electrode; wherein a device having a non-linear characteristic is provided in series between the gate electrode and the gate bias network such that a forward bias current at the gate electrode of the field effect transistor is reduced or prevented.The reduction or prevention of a forward bias current leads in overdrive conditions to a self-adjustment of the bias point of the field-effect transistor improving the reduction of distortions of an amplifier or changing the class of oscillators connected to the gate electrode.

摘要翻译： 本发明涉及用于射频应用中的场效应晶体管的自调节栅极偏置网络。 提供了一种用于场效应晶体管的偏置网络，其包括具有连接到地的源极电极和连接到负载的漏电极的场效应晶体管; 连接到栅电极的射频网络; 连接到栅电极的栅偏置网; 其中具有非线性特性的器件串联地提供在栅电极和栅极偏压网络之间，使得场效应晶体管的栅电极处的正向偏置电流被减小或防止。 正向偏置电流的减少或防止导致过驱动条件下对场效应晶体管的偏置点进行自调节，从而改善了放大器失真的减小或者改变连接到栅电极的振荡器的类别。