摘要:
A plasma light with at least one non-rotating light bulb is disclosed. The light includes a conducting cavity structure with a radiation source input port and a light bulb. The geometry of the cavity is designed to generate electrical fields with time-dependent geometrical designed orientation within parts of the light bulb, while the direction of the radiation fields from the radiation source port caused by a microwave generator to the input port fields is stationary.
摘要:
A device for generating a plasma, comprises an alternating voltage source, a travelling wave resonator and coupling means that are designed to couple the alternating voltage generated by the alternating voltage source into the travelling wave resonator in such a manner that travelling electromagnetic waves are produced, wherein the travelling wave resonator is designed to increase the electric field strength of the travelling electromagnetic waves in such a manner that a plasma is ignited in a gas. The invention further relates to a method for generating a plasma, comprising the steps of: generating an alternating voltage; generating travelling electromagnetic waves in a travelling wave resonator by coupling said alternating voltage into the travelling wave resonator; and increasing the electric field strength of the travelling electromagnetic waves in the travelling wave resonator in order to ignite a plasma in a gas.
摘要:
The invention relates to a plasma source with an oscillator having an active element and a resonator connected to the active element. The resonator has a hollow body, a gas inlet, a gas outlet arranged at a distal end of the hollow body about a longitudinal axis of the hollow body, and a coil arranged along the longitudinal axis of the hollow body, said coil having an effective length of one quarter of a wavelength at a resonant frequency of the resonator. A distal end of the coil is arranged relative to the gas outlet such that a plasma section can form between the distal end of the coil serving as a first plasma electrode and the gas outlet of the hollow body serving as a second plasma electrode. At a proximal end of the hollow body, the coil is lead out of the interior of the hollow body through an electrically contact-free feed-through, and a proximal end of the coil contacts the hollow body at its external side. At a first contact region located between the proximal end of the coil and the feed-through, the coil is coupled to a first gate of the active element, and at a second contact region located between the proximal end of the coil and the feed-through, the coil is coupled to a second gate of the active element.
摘要:
The present invention is directed to a self-adjusting gate bias network for field effect transistors in radio frequency applications. A bias network for field effect transistors is provided comprising a field effect transistor having a source electrode connected to ground and a drain electrode connected to a load; a radio frequency network connected to the gate electrode; a gate bias network connected to the gate electrode; wherein a device having a non-linear characteristic is provided in series between the gate electrode and the gate bias network such that a forward bias current at the gate electrode of the field effect transistor is reduced or prevented.The reduction or prevention of a forward bias current leads in overdrive conditions to a self-adjustment of the bias point of the field-effect transistor improving the reduction of distortions of an amplifier or changing the class of oscillators connected to the gate electrode.
摘要:
A microwave resonator for inductively generating a plasma (5) is introduced. The microwave resonator comprises a first tube (4) and a conductive, preferably metal, plate (1). The tube (4) is designed for connection to a supply device for a process gas and for conveying the process gas and comprises a dielectric material. The conductive plate (1) has a first, preferably cylindrical, hole (2), which extends from a first opening on a first side of the conductive plate (1) to a second opening on a second side, opposite the first side, of the conductive plate (1). The first tube (4) is arranged in the first hole (2). The conductive plate (1) also has a first slit (3), which is open towards the first and the second side of the conductive plate (1) and towards the first hole (2).The invention also introduces a plasma generator with such a microwave resonator.
摘要:
A microplasma array for the production of low-temperature plasmas at or near atmospheric pressures is described. The walls of holes made in a substrate at regular intervals with respect to one another form hollow electrodes and are coated with metal. The hollow electrodes are supplied individually or as a group from one side of the substrate with an electrical excitation in the GHz-region.
摘要:
The invention relates to a device for the generation of a plasma by means of circularly polarized high frequency waves. These high frequency waves are generated by means of voltages having a phase rotation of 90.degree..
摘要:
A circuit for adjusting the impedance of a plasma section to a high-frequency generator wherein three capacitors are connected in series between the high-frequency generator and an electrode of the plasma section; located between the generator and the electrode are two parallel oscillatory circuits.
摘要:
An apparatus for the generation of an inductively excited ion or plasma source includes an amplification system and a high frequency excitation coil which are coupled to form a self-starting free-running excitation oscillator.
摘要:
The invention relates to an apparatus for the treatment of surfaces of a substrate by means of plasma. Said apparatus comprises a plasma source designed to generate plasma and to eject it into a plasma space with a longitudinal plasma extent, said extent extending along a main motion component of the plasma, an at least partially conductive first holding apparatus designed to hold a first workpiece, and a voltage source connected to the first holding apparatus, said voltage source being designed to generate a first acceleration voltage and to apply it to the first holding apparatus. The first holding apparatus is arranged and designed relative to the plasma source in such a manner that it places the first workpiece in such a manner that the plasma reaches the first workpiece when the first acceleration voltage is applied.