Device and method for generating a plasma by means of a traveling wave resonator
    2.
    发明授权
    Device and method for generating a plasma by means of a traveling wave resonator 有权
    用于通过行波谐振器产生等离子体的装置和方法

    公开(公告)号:US09210789B2

    公开(公告)日:2015-12-08

    申请号:US13508607

    申请日:2010-11-19

    摘要: A device for generating a plasma, comprises an alternating voltage source, a travelling wave resonator and coupling means that are designed to couple the alternating voltage generated by the alternating voltage source into the travelling wave resonator in such a manner that travelling electromagnetic waves are produced, wherein the travelling wave resonator is designed to increase the electric field strength of the travelling electromagnetic waves in such a manner that a plasma is ignited in a gas. The invention further relates to a method for generating a plasma, comprising the steps of: generating an alternating voltage; generating travelling electromagnetic waves in a travelling wave resonator by coupling said alternating voltage into the travelling wave resonator; and increasing the electric field strength of the travelling electromagnetic waves in the travelling wave resonator in order to ignite a plasma in a gas.

    摘要翻译: 一种用于产生等离子体的装置,包括交流电压源,行波谐振器和耦合装置,其被设计成以产生行进电磁波的方式将由交流电压源产生的交流电耦合到行波谐振器中, 其特征在于,所述行波谐振器被设计成以等离子体在气体中点燃的方式增加所述行进电磁波的电场强度。 本发明还涉及一种用于产生等离子体的方法,包括以下步骤:产生交流电压; 通过将所述交流电压耦合到行波谐振器中,在行波谐振器中产生行波电磁波; 并且增加行波谐振器中的行进电磁波的电场强度,以点燃气体中的等离子体。

    Miniaturizable plasma source
    3.
    发明授权
    Miniaturizable plasma source 有权
    小型化等离子体源

    公开(公告)号:US08796934B2

    公开(公告)日:2014-08-05

    申请号:US13575981

    申请日:2011-01-28

    IPC分类号: H01J7/24

    摘要: The invention relates to a plasma source with an oscillator having an active element and a resonator connected to the active element. The resonator has a hollow body, a gas inlet, a gas outlet arranged at a distal end of the hollow body about a longitudinal axis of the hollow body, and a coil arranged along the longitudinal axis of the hollow body, said coil having an effective length of one quarter of a wavelength at a resonant frequency of the resonator. A distal end of the coil is arranged relative to the gas outlet such that a plasma section can form between the distal end of the coil serving as a first plasma electrode and the gas outlet of the hollow body serving as a second plasma electrode. At a proximal end of the hollow body, the coil is lead out of the interior of the hollow body through an electrically contact-free feed-through, and a proximal end of the coil contacts the hollow body at its external side. At a first contact region located between the proximal end of the coil and the feed-through, the coil is coupled to a first gate of the active element, and at a second contact region located between the proximal end of the coil and the feed-through, the coil is coupled to a second gate of the active element.

    摘要翻译: 本发明涉及一种具有振荡器的等离子体源,该振荡器具有连接到有源元件的有源元件和谐振器。 谐振器具有中空体,气体入口,排出在空心体的远端周围的中空体的纵向轴线的气体出口以及沿着中空体的纵向轴线布置的线圈,所述线圈具有有效的 在谐振器的谐振频率处的四分之一波长的长度。 线圈的远端相对于气体出口布置,使得等离子体部分可以在用作第一等离子体电极的线圈的远端和用作第二等离子体电极的中空体的气体出口之间形成。 在空心体的近端处,线圈通过无电接触的引入而从中空体的内部引出,并且线圈的近端在其外侧与中空体接触。 在位于线圈的近端和馈通之间的第一接触区域处,线圈耦合到有源元件的第一栅极,并且在位于线圈的近端和馈电线圈之间的第二接触区域处, 线圈耦合到有源元件的第二栅极。

    Self-adjusting gate bias network for field effect transistors
    4.
    发明授权
    Self-adjusting gate bias network for field effect transistors 有权
    用于场效应晶体管的自调节门偏置网络

    公开(公告)号:US08324971B2

    公开(公告)日:2012-12-04

    申请号:US13063314

    申请日:2009-09-15

    IPC分类号: H03F3/04

    摘要: The present invention is directed to a self-adjusting gate bias network for field effect transistors in radio frequency applications. A bias network for field effect transistors is provided comprising a field effect transistor having a source electrode connected to ground and a drain electrode connected to a load; a radio frequency network connected to the gate electrode; a gate bias network connected to the gate electrode; wherein a device having a non-linear characteristic is provided in series between the gate electrode and the gate bias network such that a forward bias current at the gate electrode of the field effect transistor is reduced or prevented.The reduction or prevention of a forward bias current leads in overdrive conditions to a self-adjustment of the bias point of the field-effect transistor improving the reduction of distortions of an amplifier or changing the class of oscillators connected to the gate electrode.

    摘要翻译: 本发明涉及用于射频应用中的场效应晶体管的自调节栅极偏置网络。 提供了一种用于场效应晶体管的偏置网络,其包括具有连接到地的源极电极和连接到负载的漏电极的场效应晶体管; 连接到栅电极的射频网络; 连接到栅电极的栅偏置网; 其中具有非线性特性的器件串联地提供在栅电极和栅极偏压网络之间,使得场效应晶体管的栅电极处的正向偏置电流被减小或防止。 正向偏置电流的减少或防止导致过驱动条件下对场效应晶体管的偏置点进行自调节,从而改善了放大器失真的减小或者改变连接到栅电极的振荡器的类别。

    MICROWAVE ICP RESONATOR
    5.
    发明申请
    MICROWAVE ICP RESONATOR 审中-公开
    微波ICP谐振器

    公开(公告)号:US20130328483A1

    公开(公告)日:2013-12-12

    申请号:US13884973

    申请日:2011-11-15

    IPC分类号: H05H1/46

    摘要: A microwave resonator for inductively generating a plasma (5) is introduced. The microwave resonator comprises a first tube (4) and a conductive, preferably metal, plate (1). The tube (4) is designed for connection to a supply device for a process gas and for conveying the process gas and comprises a dielectric material. The conductive plate (1) has a first, preferably cylindrical, hole (2), which extends from a first opening on a first side of the conductive plate (1) to a second opening on a second side, opposite the first side, of the conductive plate (1). The first tube (4) is arranged in the first hole (2). The conductive plate (1) also has a first slit (3), which is open towards the first and the second side of the conductive plate (1) and towards the first hole (2).The invention also introduces a plasma generator with such a microwave resonator.

    摘要翻译: 引入用于感应地产生等离子体(5)的微波谐振器。 微波谐振器包括第一管(4)和导电的,优选为金属的板(1)。 管(4)被设计用于连接到用于处理气体的供应装置并且用于输送处理气体并且包括电介质材料。 导电板(1)具有第一优选为圆柱形的孔(2),其从导电板(1)的第一侧上的第一开口延伸到与第一侧相对的第二侧上的第二开口 导电板(1)。 第一管(4)布置在第一孔(2)中。 导电板(1)还具有朝向导电板(1)的第一侧和第二侧开口并朝向第一孔(2)的第一狭缝(3)。 本发明还引入了具有这种微波谐振器的等离子体发生器。

    Microplasma array
    6.
    发明授权
    Microplasma array 有权
    微血管阵列

    公开(公告)号:US08545764B2

    公开(公告)日:2013-10-01

    申请号:US11813669

    申请日:2006-01-11

    申请人: Roland Gesche

    发明人: Roland Gesche

    IPC分类号: B01J19/08

    摘要: A microplasma array for the production of low-temperature plasmas at or near atmospheric pressures is described. The walls of holes made in a substrate at regular intervals with respect to one another form hollow electrodes and are coated with metal. The hollow electrodes are supplied individually or as a group from one side of the substrate with an electrical excitation in the GHz-region.

    摘要翻译: 描述了在等于或接近大气压力下生产低温等离子体的微量阵列。 相对于彼此以规则间隔形成的孔的壁形成中空电极并且涂覆有金属。 中空电极单独地或作为一组从基板的一侧以GHz区域中的电激励提供。

    Circuit for adjusting the impedance of a plasma section to a
high-frequency generator
    8.
    发明授权
    Circuit for adjusting the impedance of a plasma section to a high-frequency generator 失效
    调整等离子体部分对高频发生器的阻抗的电路

    公开(公告)号:US5140223A

    公开(公告)日:1992-08-18

    申请号:US412249

    申请日:1989-09-25

    IPC分类号: H03H7/38

    CPC分类号: H03H7/38

    摘要: A circuit for adjusting the impedance of a plasma section to a high-frequency generator wherein three capacitors are connected in series between the high-frequency generator and an electrode of the plasma section; located between the generator and the electrode are two parallel oscillatory circuits.

    摘要翻译: 一种用于将等离子体部分的阻抗调整到高频发生器的电路,其中三个电容器串联连接在高频发生器和等离子体部分的电极之间; 位于发电机和电极之间的是两个平行的振荡电路。

    Ion source
    9.
    发明授权
    Ion source 失效
    离子源

    公开(公告)号:US5124526A

    公开(公告)日:1992-06-23

    申请号:US662259

    申请日:1991-02-28

    IPC分类号: H01J27/14 H01J27/16 H01J37/08

    CPC分类号: H01J27/16

    摘要: An apparatus for the generation of an inductively excited ion or plasma source includes an amplification system and a high frequency excitation coil which are coupled to form a self-starting free-running excitation oscillator.

    摘要翻译: 用于产生感应激发的离子或等离子体源的装置包括放大系统和耦合以形成自启动自由振荡激励振荡器的高频激励线圈。

    PLASMA PROCESSES AT ATMOSPHERIC PRESSURE
    10.
    发明申请
    PLASMA PROCESSES AT ATMOSPHERIC PRESSURE 审中-公开
    大气压力等离子体处理

    公开(公告)号:US20130213576A1

    公开(公告)日:2013-08-22

    申请号:US13817537

    申请日:2011-08-16

    IPC分类号: H01J37/32 H05H1/42

    摘要: The invention relates to an apparatus for the treatment of surfaces of a substrate by means of plasma. Said apparatus comprises a plasma source designed to generate plasma and to eject it into a plasma space with a longitudinal plasma extent, said extent extending along a main motion component of the plasma, an at least partially conductive first holding apparatus designed to hold a first workpiece, and a voltage source connected to the first holding apparatus, said voltage source being designed to generate a first acceleration voltage and to apply it to the first holding apparatus. The first holding apparatus is arranged and designed relative to the plasma source in such a manner that it places the first workpiece in such a manner that the plasma reaches the first workpiece when the first acceleration voltage is applied.

    摘要翻译: 本发明涉及一种借助于等离子体处理衬底表面的设备。 所述装置包括设计成产生等离子体并将其喷射到具有纵向等离子体范围的等离子体空间中的等离子体源,所述等离子体区域沿着等离子体的主运动分量延伸,至少部分地传导的第一保持装置,设计成夹持第一工件 以及连接到第一保持装置的电压源,所述电压源被设计成产生第一加速电压并将其施加到第一保持装置。 第一保持装置相对于等离子体源被布置和设计,使得它以这样的方式放置第一工件,使得当施加第一加速电压时等离子体到达第一工件。