摘要:
The invention relates to an electrode for a plasma generator for generating plasmas at atmospheric pressure or near-atmospheric pressures by means of excitation using microwaves. The invention provides an electrode made of a sheet metal strip (1), in the longitudinal direction of which at least one slot (2) is introduced at a length that is one time or multiple times that of a quarter of the wavelength of the open-circuit voltage of the microwave such that at least two partial electrodes (3) are formed, wherein the voltage supply line is provided on the partial electrodes (3) in the region of the closed slot end or ends.
摘要:
A device for generating a plasma, comprises an alternating voltage source, a travelling wave resonator and coupling means that are designed to couple the alternating voltage generated by the alternating voltage source into the travelling wave resonator in such a manner that travelling electromagnetic waves are produced, wherein the travelling wave resonator is designed to increase the electric field strength of the travelling electromagnetic waves in such a manner that a plasma is ignited in a gas. The invention further relates to a method for generating a plasma, comprising the steps of: generating an alternating voltage; generating travelling electromagnetic waves in a travelling wave resonator by coupling said alternating voltage into the travelling wave resonator; and increasing the electric field strength of the travelling electromagnetic waves in the travelling wave resonator in order to ignite a plasma in a gas.
摘要:
The present invention is directed to a self-adjusting gate bias network for field effect transistors in radio frequency applications. A bias network for field effect transistors is provided comprising a field effect transistor having a source electrode connected to ground and a drain electrode connected to a load; a radio frequency network connected to the gate electrode; a gate bias network connected to the gate electrode; wherein a device having a non-linear characteristic is provided in series between the gate electrode and the gate bias network such that a forward bias current at the gate electrode of the field effect transistor is reduced or prevented.The reduction or prevention of a forward bias current leads in overdrive conditions to a self-adjustment of the bias point of the field-effect transistor improving the reduction of distortions of an amplifier or changing the class of oscillators connected to the gate electrode.
摘要:
The invention relates to a plasma source with an oscillator having an active element and a resonator connected to the active element. The resonator has a hollow body, a gas inlet, a gas outlet arranged at a distal end of the hollow body about a longitudinal axis of the hollow body, and a coil arranged along the longitudinal axis of the hollow body, said coil having an effective length of one quarter of a wavelength at a resonant frequency of the resonator. A distal end of the coil is arranged relative to the gas outlet such that a plasma section can form between the distal end of the coil serving as a first plasma electrode and the gas outlet of the hollow body serving as a second plasma electrode. At a proximal end of the hollow body, the coil is lead out of the interior of the hollow body through an electrically contact-free feed-through, and a proximal end of the coil contacts the hollow body at its external side. At a first contact region located between the proximal end of the coil and the feed-through, the coil is coupled to a first gate of the active element, and at a second contact region located between the proximal end of the coil and the feed-through, the coil is coupled to a second gate of the active element.
摘要:
The invention relates to an electrode for a plasma generator for generating plasmas at atmospheric pressure or near-atmospheric pressures by means of excitation using microwaves. The invention provides an electrode made of a sheet metal strip (1), in the longitudinal direction of which at least one slot (2) is introduced at a length that is one time or multiple times that of a quarter of the wavelength of the open-circuit voltage of the microwave such that at least two partial electrodes (3) are formed, wherein the voltage supply line is provided on the partial electrodes (3) in the region of the closed slot end or ends.
摘要:
A device for generating a plasma, comprises an alternating voltage source, a travelling wave resonator and coupling means that are designed to couple the alternating voltage generated by the alternating voltage source into the travelling wave resonator in such a manner that travelling electromagnetic waves are produced, wherein the travelling wave resonator is designed to increase the electric field strength of the travelling electromagnetic waves in such a manner that a plasma is ignited in a gas. The invention further relates to a method for generating a plasma, comprising the steps of: generating an alternating voltage; generating travelling electromagnetic waves in a travelling wave resonator by coupling said alternating voltage into the travelling wave resonator; and increasing the electric field strength of the travelling electromagnetic waves in the travelling wave resonator in order to ignite a plasma in a gas.
摘要:
The invention relates to a plasma source with an oscillator having an active element and a resonator connected to the active element. The resonator has a hollow body, a gas inlet, a gas outlet arranged at a distal end of the hollow body about a longitudinal axis of the hollow body, and a coil arranged along the longitudinal axis of the hollow body, said coil having an effective length of one quarter of a wavelength at a resonant frequency of the resonator. A distal end of the coil is arranged relative to the gas outlet such that a plasma section can form between the distal end of the coil serving as a first plasma electrode and the gas outlet of the hollow body serving as a second plasma electrode. At a proximal end of the hollow body, the coil is lead out of the interior of the hollow body through an electrically contact-free feed-through, and a proximal end of the coil contacts the hollow body at its external side. At a first contact region located between the proximal end of the coil and the feed-through, the coil is coupled to a first gate of the active element, and at a second contact region located between the proximal end of the coil and the feed-through, the coil is coupled to a second gate of the active element.
摘要:
The present invention is directed to a self-adjusting gate bias network for field effect transistors in radio frequency applications. A bias network for field effect transistors is provided comprising a field effect transistor having a source electrode connected to ground and a drain electrode connected to a load; a radio frequency network connected to the gate electrode; a gate bias network connected to the gate electrode; wherein a device having a non-linear characteristic is provided in series between the gate electrode and the gate bias network such that a forward bias current at the gate electrode of the field effect transistor is reduced or prevented.The reduction or prevention of a forward bias current leads in overdrive conditions to a self-adjustment of the bias point of the field-effect transistor improving the reduction of distortions of an amplifier or changing the class of oscillators connected to the gate electrode.