Gaussian profile promoting cavity for semiconductor laser
    1.
    发明授权
    Gaussian profile promoting cavity for semiconductor laser 失效
    用于半导体激光器的高斯分布促进腔

    公开(公告)号:US6002703A

    公开(公告)日:1999-12-14

    申请号:US15488

    申请日:1998-01-28

    申请人: Ruey-Jen Hwu Wei Xu

    发明人: Ruey-Jen Hwu Wei Xu

    摘要: A system and method for generating a laser beam from a semiconductor laser in order to eliminate or substantially reduce filamentation of the laser beam. The system and method utilizes an external optical member such as a reflector to improve or enhance the overall laser beam quality produced. The reflector has a Gaussian intensity profile promoting cavity such as a parabolic cavity, with the cavity having a focal length a preselected distance from the cavity surface. The semiconductor laser is positioned such that the facet of the semiconductor laser is at the focal length distance from the cavity surface. The cavity has a mode-selecting reflective surface such that the beam has a substantially Gaussian intensity profile. A beam splitter can be optionally employed between the semiconductor laser and the optical reflector for certain applications if desired. Alternatively, an external digital optics member can be employed with a semiconductor laser to produce a beam with a substantially Gaussian intensity profile.

    摘要翻译: 用于从半导体激光器产生激光束以消除或基本上减少激光束的光纤的系统和方法。 该系统和方法利用诸如反射器的外部光学构件来改善或增强所产生的整体激光束质量。 反射器具有高斯分布促进空腔,例如抛物面空腔,空腔具有与空腔表面预定距离的焦距。 半导体激光器被定位成使得半导体激光器的刻面处于与腔表面的焦距距离。 空腔具有模式选择反射表面,使得光束具有基本上高斯强度分布。 如果需要,可以在半导体激光器和光学反射器之间任选地采用分束器用于某些应用。 或者,外部数字光学元件可以与半导体激光器一起使用以产生具有基本高斯强度分布的光束。

    MULTIPLE DRIVER POWER SUPPLY
    2.
    发明申请
    MULTIPLE DRIVER POWER SUPPLY 审中-公开
    多驱动电源

    公开(公告)号:US20130235630A1

    公开(公告)日:2013-09-12

    申请号:US13865984

    申请日:2013-04-18

    IPC分类号: H02M7/5383 H05K3/30

    摘要: A power supply includes a power source having at least one power source output, and a plurality of drivers connected to the at least one power source output. At least one of the plurality of drivers includes a bridge network having a first switch, a second switch and a bridge network output. The first switch is connected between the at least one power source output and the bridge network output. The second switch is connected between the bridge network output and a ground. The bridge network further includes at least one control input connected to the second switch. The bridge network is adapted to change a state of the first switch based on a state of the second switch.

    摘要翻译: 电源包括具有至少一个电源输出的电源和连接到所述至少一个电源输出的多个驱动器。 多个驱动器中的至少一个包括具有第一开关,第二开关和桥接网络输出的桥接网络。 第一开关连接在至少一个电源输出端和桥接网络输出端之间。 第二个开关连接在桥网输出和地之间。 桥接网络还包括连接到第二交换机的至少一个控制输入。 桥接网络适于基于第二交换机的状态来改变第一交换机的状态。

    Method and apparatus for supplying power
    3.
    发明授权
    Method and apparatus for supplying power 失效
    供电方法和装置

    公开(公告)号:US07782644B2

    公开(公告)日:2010-08-24

    申请号:US11681767

    申请日:2007-03-03

    IPC分类号: H02M5/275 H02M5/293

    摘要: A power supply includes a power source having at least one power source output, and a plurality of drivers connected to the at least one power source output. At least one of the plurality of drivers includes a bridge network having a first switch, a second switch and a bridge network output. The first switch is connected between the at least one power source output and the bridge network output. The second switch is connected between the bridge network output and a ground. The bridge network further includes at least one control input connected to the second switch to direct electrical current from the at least one power source output either substantially through the bridge network output or through the second switch to ground.

    摘要翻译: 电源包括具有至少一个电源输出的电源和连接到所述至少一个电源输出的多个驱动器。 多个驱动器中的至少一个包括具有第一开关,第二开关和桥接网络输出的桥接网络。 第一开关连接在至少一个电源输出端和桥接网络输出端之间。 第二个开关连接在桥网输出和地之间。 桥接网络还包括连接到第二开关的至少一个控制输入,以将基本上通过桥接网络输出或通过第二开关的至少一个电源输出的电流引导到地。

    Shinged structures for vacuum microelectronics and methods of manufacturing same
    4.
    发明授权
    Shinged structures for vacuum microelectronics and methods of manufacturing same 失效
    真空微电子的结构和制造方法

    公开(公告)号:US07067980B2

    公开(公告)日:2006-06-27

    申请号:US10775266

    申请日:2004-02-10

    IPC分类号: H01J25/34

    CPC分类号: H01J23/08 H01J25/10

    摘要: An improved Klystron device is disclosed which has opposed electrostatic (ES) magnetic field generating members which are uniformly spaced along a longitudinal axis to form an electron beam chamber. The ES magnetic field generating members produce a magnetic flux which confines an electron beam passing through the chamber when an alternating current (AC) is imposed upon the magnetic field generating members. An additional improvement includes a chamber formed from a single sheet of electron conductive metal having a ladder-like structure symmetrical about a longitudinal hinge which permits the structure to be folded about the hinge to form a suitable electron beam chamber.

    摘要翻译: 公开了一种改进的速调管装置,其具有相对于沿着纵向轴线均匀间隔开的静电(ES)磁场产生部件,以形成电子束室。 当对磁场产生部件施加交流电(AC)时,ES磁场产生部件产生限制通过室的电子束的磁通量。 另外的改进包括由单片电子导电金属形成的室,其具有梯形结构,其围绕纵向铰链对称,其允许结构围绕铰链折叠以形成合适的电子束室。

    Vertical transformer
    5.
    发明授权
    Vertical transformer 失效
    垂直变压器

    公开(公告)号:US06501363B1

    公开(公告)日:2002-12-31

    申请号:US09706328

    申请日:2000-11-03

    IPC分类号: H01F500

    摘要: A vertical transformer that comprises a primary and a secondary winding, wherein one winding is positioned on a first plane, and the other winding is positioned on a second plane. The primary and secondary windings are separated by a dielectric substrate. In one embodiment, the primary and secondary windings are configured to use the same ground reference, and terminals in the center of each winding are connected to the ground reference by a via hole to form an in-phase transformer. In a second embodiment, a center terminal of one winding and an outbound terminal of the other winding are connected to the ground reference to form an opposite-phase transformer. In the second embodiment, a dielectric substrate is positioned between one of the windings and a ground plane.

    摘要翻译: 一种垂直变压器,包括初级和次级绕组,其中一个绕组位于第一平面上,另一绕组位于第二平面上。 初级和次级绕组由电介质基片隔开。 在一个实施例中,初级和次级绕组被配置为使用相同的接地参考,并且每个绕组的中心的端子通过通孔连接到接地参考以形成同相变压器。 在第二实施例中,一个绕组的中心端子和另一个绕组的出站端子连接到接地基准以形成一个反相变压器。 在第二实施例中,电介质基板位于绕组中的一个和接地平面之间。

    Coupled cavity traveling wave tube
    7.
    发明授权
    Coupled cavity traveling wave tube 有权
    耦合腔行波管

    公开(公告)号:US08476830B2

    公开(公告)日:2013-07-02

    申请号:US12956396

    申请日:2010-11-30

    IPC分类号: H01J19/80

    CPC分类号: H01J25/34 H01J23/24

    摘要: Various embodiments of a coupled cavity traveling wave tube are disclosed herein. For example, some embodiments provide a coupled cavity traveling wave tube including a plurality of core segments arranged in spaced-apart fashion to form an electron beam tunnel, a first longitudinal member adjacent the plurality of core segments alternately extending toward and receding from successive core segments, and a second longitudinal member adjacent to the plurality of core segments alternately extending toward and receding from successive core segments. The first and second longitudinal members are offset to extend toward different core segments.

    摘要翻译: 本文公开了耦合腔行波管的各种实施例。 例如,一些实施例提供耦合的空腔行波管,其包括以间隔开的方式布置以形成电子束通道的多个芯部段,与多个芯部分相邻的第一纵向部件,其交替地向连续的芯部段 ,并且与所述多个芯部段相邻的第二纵向部件交替地向连续的芯部段延伸并且从相继的芯部部分退回。 第一和第二纵向构件偏移以朝向不同的芯段延伸。

    Solid state vacuum devices
    8.
    发明授权
    Solid state vacuum devices 失效
    固态真空装置

    公开(公告)号:US07397175B2

    公开(公告)日:2008-07-08

    申请号:US11348959

    申请日:2006-02-07

    IPC分类号: H01J1/46 H01J21/10

    摘要: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises a cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

    摘要翻译: 固态真空装置(SSVD)及其制造方法。 在一个实施例中,SSVD形成三极管器件,其包括其中形成有腔的衬底。 SSVD还包括位于空腔开口附近的阴极,其中阴极以桥形式跨越空腔,在阴极和衬底之间产生气隙。 另外,SSVD还包括位于阳极和阴极之间的阳极和栅极。 在向阴极施加热量时,电子从阴极释放,通过栅格并被阳极接收。 响应于接收电子,阳极产生电流。 由阳极接收的电流由施加到电网的电压控制。 本发明的其它实施例提供二极管,四极管,五极管和其它高阶器件配置。

    Vaporization and cracker cell apparatus
    9.
    发明授权
    Vaporization and cracker cell apparatus 失效
    汽化裂解池装置

    公开(公告)号:US06447734B1

    公开(公告)日:2002-09-10

    申请号:US09241805

    申请日:1999-02-02

    IPC分类号: C23C1424

    CPC分类号: C23C14/243 C30B23/066

    摘要: An apparatus for vaporizing and cracking chemical elements for use in a deposition process is provided. The apparatus includes a vaporization cell integrally connected with a thermal cracker cell. The vaporization cell has an inlet section in communication with a valve section defining a heating chamber capable of holding a liquid or solid chemical material to be vaporized. A heat source is positioned in the heating chamber and is capable of providing sufficient thermal energy to evaporate or sublimate the chemical material. The thermal cracker cell is communicatively connected to an outlet of the vaporization cell, and includes an elongated tapered tube with a heating element associated therewith. The heating element is capable of providing sufficient thermal energy to dissociate molecular clusters of vaporized chemical material. This provides monomeric or dimeric chemical elements for use in a deposition process such as during semiconductor device fabrication.

    摘要翻译: 提供一种用于蒸发和破裂用于沉积工艺中的化学元素的设备。 该装置包括与热裂解器单元一体连接的汽化单元。 蒸发池具有与限定加热室的阀部分连通的入口部分,该加热室能够容纳要蒸发的液体或固体化学材料。 热源位于加热室中,并且能够提供足够的热能来蒸发或升华化学材料。 热裂解器单元通信地连接到蒸发单元的出口,并且包括具有与其相关联的加热元件的细长锥形管。 加热元件能够提供足够的热能来解离蒸发的化学材料的分子簇。 这提供了用于沉积工艺中的单体或二聚化学元素,例如在半导体器件制造期间。

    Laser beam coupler, shaper and collimator device
    10.
    发明授权
    Laser beam coupler, shaper and collimator device 有权
    激光束耦合器,整形器和准直器装置

    公开(公告)号:US06259713B1

    公开(公告)日:2001-07-10

    申请号:US09256379

    申请日:1999-02-24

    IPC分类号: H01S5024

    摘要: An apparatus for providing improved high power laser beams. An elongated reflector with a highly-reflective surface is utilized with a laser beam emitter, such as a broad area diode laser, a diode laser bar, or a diode laser array. The laser beams reflect off of the highly-reflective surface which is curved substantially parabolically. The reflected beams are collimated or otherwise shaped and/or coupled by manipulation of the size and shape of the elongated reflector and the placement of the laser beam emitter in association therewith. A system of lenses or mirrors may be used in conjunction with the reflecting apparatus to achieve enhanced beam quality. One-dimensional and two-dimensional laser arrays can also be fabricated utilizing a substrate containing laser beam emitters in communication with one or more grooves formed in the substrate, with parabolic reflecting surfaces formed in the grooves or with optical reflector members placed in the grooves.

    摘要翻译: 一种用于提供改进的高功率激光束的装置。 具有高反射表面的细长反射体与诸如广域二极管激光器,二极管激光棒或二极管激光器阵列的激光束发射器一起使用。 激光束从基本上抛物线弯曲的高反射表面反射出来。 通过操纵细长反射器的尺寸和形状以及与之相关联的激光束发射器的放置,反射的光束被准直或以其它方式成形和/或耦合。 透镜或反射镜的系统可以与反射装置结合使用以实现增强的光束质量。 还可以使用包含与衬底中形成的一个或多个凹槽连通的激光束发射器的衬底来制造一维和二维激光器阵列,其中形成在凹槽中的抛物面反射表面或放置在凹槽中的光学反射器构件。