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公开(公告)号：US08476830B2
公开(公告)日：2013-07-02
申请号：US12956396
申请日：2010-11-30
申请人： Ruey-Jen Hwu , Laurence P. Sadwick , Jishi Ren
发明人： Ruey-Jen Hwu , Laurence P. Sadwick , Jishi Ren
IPC分类号： H01J19/80
摘要： Various embodiments of a coupled cavity traveling wave tube are disclosed herein. For example, some embodiments provide a coupled cavity traveling wave tube including a plurality of core segments arranged in spaced-apart fashion to form an electron beam tunnel, a first longitudinal member adjacent the plurality of core segments alternately extending toward and receding from successive core segments, and a second longitudinal member adjacent to the plurality of core segments alternately extending toward and receding from successive core segments. The first and second longitudinal members are offset to extend toward different core segments.
摘要翻译： 本文公开了耦合腔行波管的各种实施例。 例如，一些实施例提供耦合的空腔行波管，其包括以间隔开的方式布置以形成电子束通道的多个芯部段，与多个芯部分相邻的第一纵向部件，其交替地向连续的芯部段 ，并且与所述多个芯部段相邻的第二纵向部件交替地向连续的芯部段延伸并且从相继的芯部部分退回。 第一和第二纵向构件偏移以朝向不同的芯段延伸。
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公开(公告)号：US08525588B1
公开(公告)日：2013-09-03
申请号：US13549398
申请日：2012-07-13
申请人： Ruey-Jen Hwu , Laurence P. Sadwick , Jishi Ren
发明人： Ruey-Jen Hwu , Laurence P. Sadwick , Jishi Ren
摘要： Various apparatuses and methods for a vacuum electronic device are disclosed herein. In one embodiment, a vacuum electronic device includes a vacuum housing, an array of slow wave structures inside the vacuum housing sharing a common electron beam tunnel, an electron beam input port at a first end of the common electron beam tunnel, and an electron beam output port at a second end of the common electron beam tunnel.
摘要翻译： 这里公开了用于真空电子设备的各种装置和方法。 在一个实施例中，真空电子设备包括真空壳体，真空壳体内的共享共同电子束隧道的慢波结构阵列，在公共电子束隧道的第一端的电子束输入端口和电子束 输出端口在公共电子束隧道的第二端。
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公开(公告)号：US20150237722A1
公开(公告)日：2015-08-20
申请号：US14628189
申请日：2015-02-20
申请人： Ruey-Jen Hwu , Jishi Ren , Laurence P. Sadwick
发明人： Ruey-Jen Hwu , Jishi Ren , Laurence P. Sadwick
CPC分类号： H05K1/024 , H01P3/082 , H01P3/084 , H05K2201/0187 , H05K2201/09236 , Y10T29/49204
摘要： An anode array system includes a number of electrically conductive strips arranged in an array to form an anode, each of the plurality of electrically conductive strips having a first end and a second end, electrical connectors at the first end and at the second end of each of the electrically conductive strips, and a substrate at least partially supporting the electrically conductive strips, wherein the substrate is porous.
摘要翻译： 阳极阵列系统包括排列成阵列以形成阳极的多个导电条，多个导电条中的每一个具有第一端和第二端，在每个的第一端和第二端的电连接器 的导电条，以及至少部分地支撑导电条的基底，其中基底是多孔的。
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公开(公告)号：US08723137B1
公开(公告)日：2014-05-13
申请号：US14051665
申请日：2013-10-11
申请人： Ruey-Jen Hwu , Jishi Ren , Jehn-Huar Chern , Laurence P. Sadwick
发明人： Ruey-Jen Hwu , Jishi Ren , Jehn-Huar Chern , Laurence P. Sadwick
CPC分类号： H01J3/32 , H01F7/0278 , H01J3/24 , H01J23/087 , H01J23/10 , H01J25/34
摘要： Various embodiments of a vacuum electronic device, a hybrid magnet for a vacuum electronic device and methods of making a hybrid magnet for a vacuum electronic device are disclosed herein. In one embodiment, a hybrid magnet for a vacuum electronic device includes a first magnet, a second magnet positioned in spaced-apart relation with the first magnet and defining a gap between the first magnet and the second magnet, and a non-magnetic spacer positioned in a portion of the gap between the first magnet and second magnet and connected to the first magnet and the second magnet.
摘要翻译： 这里公开了真空电子器件，真空电子器件的混合磁体和制造用于真空电子器件的混合磁体的方法的各种实施例。 在一个实施例中，一种用于真空电子设备的混合磁体包括第一磁体，与第一磁体间隔开定位并在第一磁体和第二磁体之间限定间隙的第二磁体，以及非磁性间隔件 在第一磁体和第二磁体之间的间隙的一部分中并连接到第一磁体和第二磁体。
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公开(公告)号：US08242696B1
公开(公告)日：2012-08-14
申请号：US12775466
申请日：2010-05-06
申请人： Ruey-Jen Hwu , Laurence P. Sadwick , Jishi Ren
发明人： Ruey-Jen Hwu , Laurence P. Sadwick , Jishi Ren
摘要： Various apparatuses and methods for a vacuum electronic device are disclosed herein. In one embodiment, a vacuum electronic device includes a vacuum housing, an array of slow wave structures inside the vacuum housing sharing a common electron beam tunnel, an electron beam input port at a first end of the common electron beam tunnel, and an electron beam output port at a second end of the common electron beam tunnel.
摘要翻译： 这里公开了用于真空电子设备的各种装置和方法。 在一个实施例中，真空电子设备包括真空壳体，真空壳体内的共享共同电子束隧道的慢波结构阵列，在公共电子束隧道的第一端的电子束输入端口和电子束 输出端口在公共电子束隧道的第二端。
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公开(公告)号：US20120133280A1
公开(公告)日：2012-05-31
申请号：US12956396
申请日：2010-11-30
申请人： Ruey-Jen Hwu , Laurence P. Sadwick , Jishi Ren
发明人： Ruey-Jen Hwu , Laurence P. Sadwick , Jishi Ren
摘要： Various embodiments of a coupled cavity traveling wave tube are disclosed herein. For example, some embodiments provide a coupled cavity traveling wave tube including a plurality of core segments arranged in spaced-apart fashion to form an electron beam tunnel, a first longitudinal member adjacent the plurality of core segments alternately extending toward and receding from successive core segments, and a second longitudinal member adjacent to the plurality of core segments alternately extending toward and receding from successive core segments. The first and second longitudinal members are offset to extend toward different core segments
摘要翻译： 本文公开了耦合腔行波管的各种实施例。 例如，一些实施例提供耦合的空腔行波管，其包括以间隔开的方式布置以形成电子束通道的多个芯部段，与多个芯部分相邻的第一纵向部件，其交替地向连续的芯部段 ，并且与所述多个芯部段相邻的第二纵向部件交替地向连续的芯部段延伸并且从相继的芯部部分退回。 第一和第二纵向构件偏移以朝向不同的芯段延伸
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7.发明授权Method of micro-fabrication of a helical slow wave structure using photo-resist processes 有权使用光刻胶工艺的螺旋慢波结构的微加工方法公开(公告)号：US07504039B2
公开(公告)日：2009-03-17
申请号：US10941237
申请日：2004-09-15
申请人： Laurence P. Sadwick , Jehn-Huar Chern , Ruey-Jen Hwu , Jishi Ren , Ding Wu , Ching-Hsi Lin
发明人： Laurence P. Sadwick , Jehn-Huar Chern , Ruey-Jen Hwu , Jishi Ren , Ding Wu , Ching-Hsi Lin
IPC分类号： B44C1/22
CPC分类号： H01J25/42 , G03F7/2022 , G03F7/24 , H01J23/165 , Y10T29/53439
摘要： Embodiments of the present invention include helical, ring bar and tunnel ladder slow wave structures (SWSs). Embodiments of methods of micro-fabricating such SWSs are also disclosed. Embodiments of high frequency electromagnetic devices including such SWSs are also disclosed. Exemplary high frequency electromagnetic devices may include a traveling wave tube, a traveling wave tube amplifier, a back wave oscillator, as part of a linear accelerator, a microwave power module, a klystron or a millimeter-wave power module.
摘要翻译： 本发明的实施例包括螺旋形，环形条和隧道梯形慢波结构（SWS）。 还公开了微型制造这种SWS的方法的实施例。 还公开了包括这种SWS的高频电磁装置的实施例。 示例性的高频电磁装置可以包括行波管，行波管放大器，背波振荡器，作为线性加速器的一部分，微波功率模块，速调管或毫米波功率模块。
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公开(公告)号：US20150360463A1
公开(公告)日：2015-12-17
申请号：US14738823
申请日：2015-06-12
CPC分类号： H01J23/165
摘要： A vacuum electronic device manufacturing system including a three dimensional printer.
摘要翻译： 一种包括三维打印机的真空电子装置制造系统。
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公开(公告)号：US06447734B1
公开(公告)日：2002-09-10
申请号：US09241805
申请日：1999-02-02
申请人： Ruey-Jen Hwu , Laurence P. Sadwick , Paul P. Lee
发明人： Ruey-Jen Hwu , Laurence P. Sadwick , Paul P. Lee
IPC分类号： C23C1424
CPC分类号： C23C14/243 , C30B23/066
摘要： An apparatus for vaporizing and cracking chemical elements for use in a deposition process is provided. The apparatus includes a vaporization cell integrally connected with a thermal cracker cell. The vaporization cell has an inlet section in communication with a valve section defining a heating chamber capable of holding a liquid or solid chemical material to be vaporized. A heat source is positioned in the heating chamber and is capable of providing sufficient thermal energy to evaporate or sublimate the chemical material. The thermal cracker cell is communicatively connected to an outlet of the vaporization cell, and includes an elongated tapered tube with a heating element associated therewith. The heating element is capable of providing sufficient thermal energy to dissociate molecular clusters of vaporized chemical material. This provides monomeric or dimeric chemical elements for use in a deposition process such as during semiconductor device fabrication.
摘要翻译： 提供一种用于蒸发和破裂用于沉积工艺中的化学元素的设备。 该装置包括与热裂解器单元一体连接的汽化单元。 蒸发池具有与限定加热室的阀部分连通的入口部分，该加热室能够容纳要蒸发的液体或固体化学材料。 热源位于加热室中，并且能够提供足够的热能来蒸发或升华化学材料。 热裂解器单元通信地连接到蒸发单元的出口，并且包括具有与其相关联的加热元件的细长锥形管。 加热元件能够提供足够的热能来解离蒸发的化学材料的分子簇。 这提供了用于沉积工艺中的单体或二聚化学元素，例如在半导体器件制造期间。
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10.发明授权Processes and packaging for high voltage integrated circuits, electronic devices, and circuits 失效高压集成电路，电子设备和电路的处理和封装公开(公告)号：US07709292B2
公开(公告)日：2010-05-04
申请号：US11541429
申请日：2006-09-29
IPC分类号： H01L21/02
CPC分类号： H01L21/78 , H01L21/561 , H01L21/6835 , H01L24/24 , H01L24/27 , H01L24/28 , H01L24/32 , H01L24/48 , H01L24/80 , H01L24/82 , H01L24/83 , H01L24/94 , H01L24/96 , H01L24/97 , H01L25/0655 , H01L25/50 , H01L2221/68322 , H01L2224/24137 , H01L2224/2919 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/484 , H01L2224/73265 , H01L2224/76155 , H01L2224/82102 , H01L2224/83101 , H01L2224/8385 , H01L2224/8592 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01014 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15787 , H01L2924/16195 , H01L2924/181 , H01L2924/18162 , H01L2924/19043 , H01L2224/82 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： The present invention includes processes and packaging for high voltage integrated circuits (ICs), high voltage electronic devices and high voltage electronic circuits which operate over a wide range of voltages, e.g., from tens of volts to tens of thousands of volts. The inventive processes and packaging are particularly suitable for integrating low or lower voltage circuits or transistors to form high voltage ICs, high voltage electronic devices and high voltage electronic circuits. The inventive processes and packaging are also particularly suitable for isolating high voltage electronics to achieve high breakdown voltages and for supporting high voltage operation. The inventive processes may be used with any suitable semiconductor materials using conventional semiconductor fabrication and related facilities.
摘要翻译： 本发明包括用于高电压集成电路（IC），高电压电子设备和高电压电子电路的工艺和封装，其在宽范围的电压范围内工作，例如几十伏到几万伏特。 本发明的工艺和封装特别适用于集成低压或低压电路或晶体管以形成高压IC，高压电子器件和高电压电子电路。 本发明的工艺和封装也特别适用于隔离高电压电子元件以实现高击穿电压并支持高压操作。 本发明的方法可以与使用常规半导体制造和相关设施的任何合适的半导体材料一起使用。
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