专利检索 ap:("Rutgers, The State University of New Jersey") AND inv:"Maryam Salehi" 第 1 页

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发明申请
GROWTH OF HIGH QUALITY SINGLE CRYSTALLINE THIN FILMS WITH THE USE OF A TEMPORAL SEED LAYER 审中-公开

公开(公告)号：US20180142375A1

公开(公告)日：2018-05-24

申请号：US15819477

申请日：2017-11-21

申请人： Rutgers, The State University of New Jersey

发明人： Seongshik Oh , Matthew J. Brahlek , Nikesh Koirala , Maryam Salehi

IPC分类号： C30B23/02 , H01L21/02 , H01L29/24 , C30B29/46

CPC分类号： C30B23/025 , C30B23/063 , C30B29/46 , H01L21/0242 , H01L21/02433 , H01L21/02485 , H01L21/02505 , H01L21/02568 , H01L21/02598 , H01L21/02631 , H01L21/02664 , H01L29/24

摘要： A method of making high quality insulating single crystalline In2Se3 films by (1) depositing at least one quintuple layer (QL) of Bi2Se3 on a substrate layer at a temperature below which only the Se adheres to the substrate; (2) depositing a plurality of In2Se3 QL's on the deposited Bi2Se3 layer or layers at a temperature between about 200° C. and about 330° C. to form a hetero-structure; and (3) heating the hetero-structure to a temperature between about 400° C. and about 700° C. so that the Bi2Se3 layer is diffused through the In2Se3 layer and evaporated away.