公开(公告)号：US08599111B2

公开(公告)日：2013-12-03

申请号：US12162929

申请日：2007-03-08

申请人： Katsumi Abe ,  Masafumi Sano ,  Ryo Hayashi ,  Hideya Kumomi

发明人： Katsumi Abe ,  Masafumi Sano ,  Ryo Hayashi ,  Hideya Kumomi

IPC分类号： G09G3/30 ,  G09G5/10

CPC分类号： G09G3/3283 ,  G09G3/2014 ,  G09G3/325 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/066 ,  G09G2320/0238 ,  G09G2320/043

摘要： A driving circuit of a display element includes a current source circuit having a first transistor and a holding circuit for holding a gate voltage of the first transistor during a first period at an electric potential corresponding to a constant current to be supplied to the display element, and a control circuit including a second transistor connected in series to the current source circuit and connected in parallel to the display element and the capacitor element whose one terminal is connected to a gate of the second transistor and the other terminal is connected to a line, and controlling the light emission time of the display element by controlling the second transistor during a third period. A constant voltage is applied from the line during the first period. The gray-scale voltage is applied from the line during a second period, and the gate of the second transistor and the one terminal are short-circuited. In addition, an electric charge based on the difference between the gray-scale voltage and the gate voltage of the second transistor is accumulated in the capacitor element, and a sweep voltage is applied during the third period, so that the ON time of the second transistor is controlled.

摘要翻译： 显示元件的驱动电路包括具有第一晶体管和保持电路的电流源电路，所述保持电路用于在第一周期期间保持与要提供给显示元件的恒定电流相对应的电位的第一晶体管的栅极电压， 以及控制电路，包括与所述电流源电路串联连接并并联连接到所述显示元件的第二晶体管和所述电容器元件，所述电容器元件的一个端子连接到所述第二晶体管的栅极，并且所述另一端子连接到线路， 以及通过在第三周期期间控制所述第二晶体管来控制所述显示元件的发光时间。 在第一周期期间从线路施加恒定电压。 在第二周期期间，从线路施加灰度电压，并且第二晶体管的栅极和一个端子短路。 此外，基于第二晶体管的灰度电压和栅极电压之间的差异的电荷累积在电容器元件中，并且在第三周期期间施加扫描电压，使得第二时间的导通时间 晶体管被控制。

公开(公告)号：US08084331B2

公开(公告)日：2011-12-27

申请号：US12865032

申请日：2009-03-02

申请人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

发明人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

IPC分类号： H01L21/331

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

摘要翻译： 在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。 半导体中间隙状态的面密度为1013cm-2eV-1或更小。 带隙可以是2eV或更大。 半导体可以包括选自In，Ga，Zn和Sn中的至少一种。 半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。 光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

公开(公告)号：US08507910B2

公开(公告)日：2013-08-13

申请号：US12520944

申请日：2008-01-17

申请人： Masato Ofuji ,  Katsumi Abe ,  Masafumi Sano ,  Hideya Kumomi ,  Ryo Hayashi

发明人： Masato Ofuji ,  Katsumi Abe ,  Masafumi Sano ,  Hideya Kumomi ,  Ryo Hayashi

IPC分类号： H01L29/00

CPC分类号： H01L27/3265 ,  H01L27/3248 ,  H01L2227/323 ,  H01L2251/5323

摘要： An active matrix display apparatus includes a transistor, a storage capacitor, and a light-emitting element formed on a substrate. The transistor includes a source electrode, a drain electrode, and a gate electrode. The storage capacitor has a multilayered structure of a first electrode, a dielectric layer, and a second electrode stacked in this order on the substrate, and the light-emitting element has a multilayered structure of a third electrode, a light-emitting layer, and a fourth electrode stacked in this order on the substrate. The first electrode is electrically connected to the gate electrode of the transistor, and at least a part of the storage capacitor is disposed between the substrate and the light-emitting element. All of the substrate, the first electrode, the second electrode, and the third electrode are formed from a material transmitting a visible light emitted by the light-emitting element. Viewing from a top of the substrate, a region for storing charges in the storage capacitor includes or is equal to a light-emitting region of the light-emitting element.

摘要翻译： 有源矩阵显示装置包括晶体管，存储电容器和形成在基板上的发光元件。 晶体管包括源电极，漏电极和栅电极。 存储电容器具有在基板上依次层叠的第一电极，电介质层和第二电极的多层结构，并且发光元件具有第三电极，发光层和多层结构的多层结构 在基板上依次层叠的第四电极。 第一电极电连接到晶体管的栅电极，并且至少一部分存储电容器设置在基板和发光元件之间。 所有的基板，第一电极，第二电极和第三电极由透射由发光元件发出的可见光的材料形成。 从基板的顶部观察，用于在存储电容器中存储电荷的区域包括或等于发光元件的发光区域。

公开(公告)号：US07923723B2

公开(公告)日：2011-04-12

申请号：US12281783

申请日：2007-02-23

申请人： Ryo Hayashi ,  Katsumi Abe ,  Masafumi Sano

发明人： Ryo Hayashi ,  Katsumi Abe ,  Masafumi Sano

IPC分类号： H01L29/786 ,  H01L31/0376 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/28202 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66969

摘要： The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film is amorphous silicon including at least O and N, and the gate insulating film has a distribution of an oxygen concentration in a thickness direction so that the oxygen concentration is high in the side of an interface with an oxide semiconductor layer and the oxygen concentration decreases toward the side of the gate electrode.

摘要翻译： 本发明的薄膜晶体管至少具有半导体层，该半导体层包括：基板，源电极，漏电极和沟道区; 栅极绝缘膜; 以及栅电极，其中所述半导体层是氧化物半导体层，并且其中所述栅极绝缘膜是至少包括至少O和N的非晶硅，并且所述栅极绝缘膜具有在厚度方向上的氧浓度的分布，使得 在与氧化物半导体层的界面侧的氧浓度高，并且氧浓度朝向栅电极侧减小。

公开(公告)号：US20100085081A1

公开(公告)日：2010-04-08

申请号：US12597211

申请日：2008-05-15

申请人： Masato Ofuji ,  Katsumi Abe ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi

发明人： Masato Ofuji ,  Katsumi Abe ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi

IPC分类号： H03K19/20 ,  H03K19/0944 ,  H01L21/8254 ,  H01L21/8236 ,  H01L21/42

CPC分类号： H01L29/7869 ,  H01L27/1233

摘要： To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors.

摘要翻译： 为了提供易于制造的增强耗尽（E / D）逆变器，在本发明中，制造由氧化物半导体构成的逆变器的制造方法，其中沟道层包括选自In， Ga和Zn形成在同一衬底上，所述逆变器是具有多个薄膜晶体管的E / D逆变器，其特征在于包括以下步骤：形成第一晶体管和第二晶体管，第一和第二晶体管的沟道层的厚度 第二晶体管是相互不同的; 以及对所述第一和第二晶体管的至少一个沟道层执行热处理。

公开(公告)号：US20090102829A1

公开(公告)日：2009-04-23

申请号：US11683872

申请日：2007-03-08

申请人： Katsumi Abe ,  Hideya Kumomi ,  Ryo Hayashi ,  Masafumi Sano

发明人： Katsumi Abe ,  Hideya Kumomi ,  Ryo Hayashi ,  Masafumi Sano

IPC分类号： G06F3/038 ,  G09G3/20

CPC分类号： G09G3/325 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/043

摘要： A pixel circuit and an image display apparatus are provided making use of a hysteresis characteristics of a transistor for driving a display element. The pixel circuit comprises: a transistor providing both different first and second relations between a gate voltage value and a drain current value at a transition from off state to an on state, and from the on state transits to the off state respectively; a display element supplied as a drive current with a current controlled by the transistor; and a capacitor element connected to a gate electrode of the transistor. One of the first and second relations is utilized during a first period for setting the drive current to be supplied to the display element. And, the other of the first and second relations is utilized during a second period for supplying the drive current to the display element to effect light emission.

摘要翻译： 使用用于驱动显示元件的晶体管的滞后特性来提供像素电路和图像显示装置。 像素电路包括：晶体管，在从断开状态转换到导通状态时，分别在栅极电压值和漏极电流值之间分别具有不同的第一和第二关系，以及从导通状态转移到断开状态。 以由晶体管控制的电流作为驱动电流提供的显示元件; 以及连接到晶体管的栅电极的电容器元件。 第一和第二关系中的一个在第一时段期间被利用来设定要提供给显示元件的驱动电流。 并且，在第二时段期间利用第一和第二关系中的另一个来向显示元件提供驱动电流以实现发光。

公开(公告)号：US20070090365A1

公开(公告)日：2007-04-26

申请号：US11583022

申请日：2006-10-19

申请人： Ryo Hayashi ,  Masafumi Sano ,  Katsumi Abe ,  Hideya Kumomi ,  Kojiro Nishi

发明人： Ryo Hayashi ,  Masafumi Sano ,  Katsumi Abe ,  Hideya Kumomi ,  Kojiro Nishi

IPC分类号： H01L29/04

CPC分类号： H01L29/78633 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/3248 ,  H01L27/3272 ,  H01L29/7869 ,  H01L29/78693 ,  H01L2251/5338

摘要： A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.

摘要翻译： 场效应晶体管包括衬底，源电极，漏电极，栅电极，栅极绝缘膜和有源层。 有源层含有在400〜800nm的波长范围内透过率为70％以上的氧化物。 作为有源层的遮光结构，例如在基板的底面设置遮光部件。

公开(公告)号：US20110092016A1

公开(公告)日：2011-04-21

申请号：US12865032

申请日：2009-03-02

申请人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

发明人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

IPC分类号： H01L21/26 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

摘要翻译： 在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。 半导体中间隙状态的面密度为1013cm-2eV-1或更小。 带隙可以是2eV或更大。 半导体可以包括选自In，Ga，Zn和Sn中的至少一种。 半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。 光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

公开(公告)号：US20090021536A1

公开(公告)日：2009-01-22

申请号：US12162929

申请日：2006-03-10

申请人： Katsumi Abe ,  Masafumi Sano ,  Ryo Hayashi ,  Hideya Kumomi

发明人： Katsumi Abe ,  Masafumi Sano ,  Ryo Hayashi ,  Hideya Kumomi

IPC分类号： G09G5/10 ,  G09G3/30

CPC分类号： G09G3/3283 ,  G09G3/2014 ,  G09G3/325 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/066 ,  G09G2320/0238 ,  G09G2320/043

摘要： A new driving circuit is provided. The driving circuit according to the present invention comprises a first period for setting a current to be supplied to a display element, a second period for setting a gray-scale of the display element, and a third period for supplying a driving current to the display element. The present invention, in the driving circuit of the display element, is provided with a current source circuit for supplying a constant current to the display element and a control circuit for controlling the time to supply a constant current to the display element from the current source circuit.

摘要翻译： 提供了新的驱动电路。 根据本发明的驱动电路包括用于设置要提供给显示元件的电流的第一周期，用于设置显示元件的灰度级的第二周期和用于向显示器提供驱动电流的第三周期 元件。 本发明在显示元件的驱动电路中设置有用于向显示元件供给恒定电流的电流源电路和控制电路，用于控制从电流源向显示元件提供恒定电流的时间 电路。

公开(公告)号：US20090072232A1

公开(公告)日：2009-03-19

申请号：US12281783

申请日：2007-02-23

申请人： Ryo Hayashi ,  Katsumi Abe ,  Masafumi Sano

发明人： Ryo Hayashi ,  Katsumi Abe ,  Masafumi Sano

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/28202 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66969

摘要： The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film is amorphous silicon including at least O and N, and the gate insulating film has a distribution of an oxygen concentration in a thickness direction so that the oxygen concentration is high in the side of an interface with an oxide semiconductor layer and the oxygen concentration decreases toward the side of the gate electrode.

摘要翻译： 本发明的薄膜晶体管至少具有半导体层，该半导体层包括：基板，源电极，漏电极和沟道区; 栅极绝缘膜; 以及栅电极，其中所述半导体层是氧化物半导体层，并且其中所述栅极绝缘膜是至少包括至少O和N的非晶硅，并且所述栅极绝缘膜具有在厚度方向上的氧浓度的分布，使得 在与氧化物半导体层的界面侧的氧浓度高，并且氧浓度朝向栅电极侧减小。