摘要:
Mutual compatibility is established between the measurement with a high magnification and the measurement in a wide region. A pattern measurement apparatus is proposed which adds identification information to each of fragments that constitute a pattern within an image obtained by the SEM, and which stores the identification information in a predetermined storage format. Here, the identification information is added to each fragment for distinguishing between one fragment and another fragment. According to the above-described configuration, it turns out that the identification information is added to each fragment on the SEM image which has possessed no specific identification information originally. As a result, it becomes possible to implement the SEM-image management based on the identification information.
摘要:
Mutual compatibility is established between the measurement with a high magnification and the measurement in a wide region. A pattern measurement apparatus is proposed which adds identification information to each of fragments that constitute a pattern within an image obtained by the SEM, and which stores the identification information in a predetermined storage format. Here, the identification information is added to each fragment for distinguishing between one fragment and another fragment. According to the above-described configuration, it turns out that the identification information is added to each fragment on the SEM image which has possessed no specific identification information originally. As a result, it becomes possible to implement the SEM-image management based on the identification information.
摘要:
A pattern measuring method and device are provided which set a reference position for a measuring point to be measured by a scanning electron microscope and the like, based on position information of a reference pattern on an image acquired from the scanning electron microscope and based on a positional relation, detected by using design data, between the measuring point and the reference pattern formed at a position isolated from the measuring point.
摘要:
An evaluation method and apparatus is provided for evaluating a displacement between patterns of a pattern image by using design data representative of a plurality of patterns superimposed ideally. A first distance is measured for an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image, a second distance is measured for a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image; and an superimposition displacement is detected between the upper layer pattern and lower layer pattern in accordance with the first distance and second distance.
摘要:
A pattern inspection apparatus can be provided, for example, in a scanning electron microscope system. When patterns of a plurality of layers are included in a SEM image, the apparatus separates the patterns according to each layer by using design data of the plurality of layers corresponding to the patterns. Consequently, the apparatus can realize inspection with use of only the pattern of a target layer to be inspected, pattern inspection differently for different layers, or detection of a positional offset between the layers.
摘要:
A pattern shape evaluation method and semiconductor inspection system having a unit for extracting contour data of a pattern from an image obtained by photographing a semiconductor pattern, a unit for generating pattern direction data from design data of the semiconductor pattern, and a unit for detecting a defect of a pattern, through comparison between pattern direction data obtained from the contour data and pattern direction data generated from the design data corresponding to a pattern position of the contour data.
摘要:
A system and a method for detecting a defect, capable of extracting a defect occurring depending on finishing accuracy required for circuit operation are provided. The system includes a timing analyzer for extracting a critical path in which a high accuracy is required for a signal transmission operation as compared with other portions based on circuit design data, a critical path extractor for comparing the circuit design data with layout design data on a pattern and for extracting graphical data including the critical path extracted by the timing analyzer, an inspection recipe creator for deciding a portion to be inspected, based on coordinate information on the graphical data including the critical path extracted by the critical path extractor, and an SEM defect review apparatus for acquiring an image of the decided portion to be inspected on a wafer according to an inspection recipe created by the inspection recipe creator.
摘要:
An object of the present invention is to provide a sample measuring method and a sample measuring device suitable for evaluation of inclination of a pattern edge. To achieve the object, a method and a device for forming a plurality of contours of a pattern edge and evaluating the dimension between the contours are proposed below. Forming a plurality of contours allows evaluation of the degree of inclination of an edge portion of a pattern. Further, displaying evaluation values indicative of the degree of the inclination of the edge portion in an in-plane distribution form makes identifying the cause of taper formation easier.
摘要:
Although there has been a method for evaluating pattern shapes of electronic devices by using, as a reference pattern, design data or a non-defective pattern, the conventional method has a problem that the pattern shape cannot be evaluated with high accuracy because of the difficulty in defining an exact shape suitable for the manufacturing conditions of the electronic devices. The present invention provides a shape evaluation method for circuit patterns of electronic devices, the method including a means for generating contour distribution data of at least two circuit patterns from contour data sets on the circuit patterns; a means for generating a reference pattern used for the pattern shape evaluation, from the contour distribution data; and a means for evaluating the pattern shape by comparing each evaluation target pattern with the reference pattern.