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公开(公告)号：US20070232085A1
公开(公告)日：2007-10-04
申请号：US11802955
申请日：2007-05-29
IPC分类号： H01L21/00
CPC分类号： G06F17/5081 , G06F17/5086 , H01J37/32082 , H01J37/32642 , H01J37/32935 , H01L21/67069 , H01L21/6875
摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.
摘要翻译： 本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。 该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理 以及聚焦环上方的鞘 - 等离子体界面。 聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。 聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差 形成在晶片表面上。 通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。
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公开(公告)号：US08057634B2
公开(公告)日：2011-11-15
申请号：US10902032
申请日：2004-07-30
IPC分类号： H01L21/205 , H01L21/302
CPC分类号： G06F17/5081 , G06F17/5086 , H01J37/32082 , H01J37/32642 , H01J37/32935 , H01L21/67069 , H01L21/6875
摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.
摘要翻译： 本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。 该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理 以及聚焦环上方的鞘 - 等离子体界面。 聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。 聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差 形成在晶片表面上。 通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。
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公开(公告)号：US20110209828A1
公开(公告)日：2011-09-01
申请号：US13103666
申请日：2011-05-09
CPC分类号： G06F17/5081 , G06F17/5086 , H01J37/32082 , H01J37/32642 , H01J37/32935 , H01L21/67069 , H01L21/6875
摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.
摘要翻译： 本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。 该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理 以及聚焦环上方的鞘 - 等离子体界面。 聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。 聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差 形成在晶片表面上。 通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。
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公开(公告)号：US20070227669A1
公开(公告)日：2007-10-04
申请号：US11802958
申请日：2007-05-29
IPC分类号： C23F1/00
CPC分类号： G06F17/5081 , G06F17/5086 , H01J37/32082 , H01J37/32642 , H01J37/32935 , H01L21/67069 , H01L21/6875
摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.
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公开(公告)号：US08366870B2
公开(公告)日：2013-02-05
申请号：US13103666
申请日：2011-05-09
CPC分类号： G06F17/5081 , G06F17/5086 , H01J37/32082 , H01J37/32642 , H01J37/32935 , H01L21/67069 , H01L21/6875
摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.
摘要翻译： 本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。 该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理 以及聚焦环上方的鞘 - 等离子体界面。 聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。 聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差 形成在晶片表面上。 通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。
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公开(公告)号：US20050230049A1
公开(公告)日：2005-10-20
申请号：US10902032
申请日：2004-07-30
IPC分类号： H01L21/3065 , C23F1/00 , H01J37/32
CPC分类号： G06F17/5081 , G06F17/5086 , H01J37/32082 , H01J37/32642 , H01J37/32935 , H01L21/67069 , H01L21/6875
摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.
摘要翻译： 本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。 该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理 以及聚焦环上方的鞘 - 等离子体界面。 聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。 聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差 形成在晶片表面上。 通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。
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公开(公告)号：US07740739B2
公开(公告)日：2010-06-22
申请号：US11001059
申请日：2004-12-02
申请人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
发明人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： C23C16/4558 , C23C16/4404 , C23C16/45591 , C23C16/4581 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32697 , H01L21/67069
摘要： A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum processing chamber to form plasmas, a sample table, a Faraday shield, and a deposition preventive plate attached detachably at least to the inner surface of the gas ring excluding the blowing port. An area of the inner surface of the gas ring including the deposition preventive plate that can be viewed from the sample surface is set to about ½ or more of the area of the sample. A susceptor made of a dielectric material covers the outer surface and the outer lateral side of the sample table. A metal film is disposed with respect to the susceptor, and an RF voltage is applied to the metal film.
摘要翻译： 等离子体处理装置包括形成真空处理室的一部分并具有用于处理气体的吹出口的气环，用于限定真空处理室的钟罩，用于将真空处理室中的RF电场提供给天线的天线 形成等离子体，样品台，法拉第屏蔽和至少可拆卸地附接到除了吹出口之外的气体环的内表面的防沉积板。 将从样品表面观察的包括防沉积板的气体环的内表面的面积设定为样品面积的约1/2或更多。 由介电材料制成的基座覆盖样品台的外表面和外侧。 相对于基座设置金属膜，向金属膜施加RF电压。
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公开(公告)号：US20090078375A1
公开(公告)日：2009-03-26
申请号：US12324125
申请日：2008-11-26
申请人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
发明人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
IPC分类号： C23F1/00
CPC分类号： C23C16/4558 , C23C16/4404 , C23C16/45591 , C23C16/4581 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32697 , H01L21/67069
摘要： A plasma processing apparatus includes in a processing chamber, a sample stage, a bell jar, a coil antenna, a Faraday shield, and a gas ring member located below a skirt portion of the bell jar and above the sample stage. The gas ring member supplies a process gas to a plasma generating space inside the bell jar from a gas port disposed on an inner surface of the gas ring member. A ring shaped plate is disposed near a periphery of the Faraday shield and having an inner surface facing and covering along the inner surface of the gas ring member and being spaced from the inner surface of the gas ring member so as to delimit a gap therebetween.
摘要翻译： 等离子体处理装置包括处理室，样品台，钟罩，线圈天线，法拉第屏蔽和位于钟罩的裙部下方并位于样品台上方的气环构件。 气环构件从设置在气环构件的内表面上的气体端口向钟罩内的等离子体产生空间提供处理气体。 环形板设置在法拉第罩的周边附近，并且具有面向气体环构件的内表面的内表面并且与气环构件的内表面间隔开，以限定其间的间隙。
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公开(公告)号：US20090020227A1
公开(公告)日：2009-01-22
申请号：US11892665
申请日：2007-08-24
申请人： Youji Andou , Ryoji Nishio , Katsushi Yagi , Tadamitsu Kanekiyo
发明人： Youji Andou , Ryoji Nishio , Katsushi Yagi , Tadamitsu Kanekiyo
IPC分类号： H01L21/3065
CPC分类号： H01L21/67109 , H01L21/67017
摘要： A vacuum processing apparatus includes a vacuum processing chamber, a high-vacuum exhaust pump for exhausting the vacuum processing chamber in vacuum, a low-vacuum exhaust pump connected to the downstream side of the high-vacuum exhaust pump, a lower electrode having mounted thereon a substrate to be processed, and a cooling gas supply unit for supplying the cooling gas between the substrate and the lower electrode. The cooling gas supply unit includes a cooling gas supply system and a cooling gas supply line. The cooling gas supply line is connected, through a first waste gas valve, to a waste gas line for exhausting the cooling gas. The waste gas line is connected just above the high-vacuum exhaust pump through a second waste gas valve, and to the exhaust gas line between the high-vacuum exhaust pump and the low-vacuum exhaust pump through a third waste gas valve.
摘要翻译： 真空处理装置包括真空处理室，用于真空排气真空处理室的高真空排气泵，连接到高真空排气泵下游侧的低真空排气泵，安装在其上的下电极 待处理的基板和用于在基板和下电极之间供给冷却气体的冷却气体供给单元。 冷却气体供给单元包括冷却气体供给系统和冷却气体供给管路。 冷却气体供给管线通过第一废气阀连接到用于排出冷却气体的废气管路。 废气管线通过第二废气阀正好连接在高真空排气泵上方，并通过第三废气阀与高真空排气泵和低真空排气泵之间的废气管路连接。
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公开(公告)号：US20050087305A1
公开(公告)日：2005-04-28
申请号：US11001059
申请日：2004-12-02
申请人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
发明人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/507 , H01J37/32 , H01L21/00 , H01L21/306
CPC分类号： C23C16/4558 , C23C16/4404 , C23C16/45591 , C23C16/4581 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32697 , H01L21/67069
摘要： A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum processing chamber to form plasmas, a sample table, a Faraday shield, and a deposition preventive plate attached detachably at least to the inner surface of the gas ring excluding the blowing port. An area of the inner surface of the gas ring including the deposition preventive plate that can be viewed from the sample surface is set to about ½ or more of the area of the sample. A susceptor made of a dielectric material covers the outer surface and the outer lateral side of the sample table. A metal film is disposed with respect to the susceptor, and an RF voltage is applied to the metal film.
摘要翻译： 等离子体处理装置包括形成真空处理室的一部分并具有用于处理气体的吹出口的气环，用于限定真空处理室的钟罩，用于将真空处理室中的RF电场提供给天线的天线 形成等离子体，样品台，法拉第屏蔽和至少可拆卸地附接到除了吹出口之外的气体环的内表面的防沉积板。 将从样品表面观察的包括防沉积板的气体环的内表面的面积设定为样品面积的约1/2或更多。 由介电材料制成的基座覆盖样品台的外表面和外侧。 相对于基座设置金属膜，向金属膜施加RF电压。
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