摘要:
A diffraction condition simulation device capable of calculating the UB matrix and the rotation matrix R and also their multiplication RUB, thereby obtaining and displaying any Bragg reflection conditions of any Bragg reflections desired by an operator of said device. The Bragg reflection conditions are useful for structure analysis and structure evaluation of any crystal samples.
摘要:
A stress of a c-axis-oriented specimen of a tetragonal polycrystal is measured using X-ray diffraction under the assumption of a plane stress state. An X-ray optical system is set in the location of φ=0°, 45° or 90°. An X-ray diffracted at a crystal plane (the direction of the normal thereto is the direction of an angle of ψ) with the Miller indices (hkl) is detected. A diffraction angle θ in a strain state is measured in the vicinity of a Bragg's angle θ0 in a non-strain state. Strains ε with respect to a plurality of ψ are calculated from the difference between the measurement values θ and the Bragg's angle θ0. Specific stress calculation formulae are determined with respect to the tetragonal system having the Laue symmetry 4/mmm. The stress is calculated from the slope of the linear line of plotted measurement results.
摘要:
A stress of a c-axis-oriented specimen of a tetragonal polycrystal is measured using. X-ray diffraction under the assumption of a plane stress state. An X-ray optical system is set in the location of φ=0°, 45° or 90°. An X-ray diffracted at a crystal plane (the direction of the normal thereto is the direction of an angle of ψ) with the Miller indices (hkl) is detected. A diffraction angle θ in a strain state is measured in the vicinity of a Bragg's angle θ0 in a non-strain state. Strains ε with respect to a plurality of ψ are calculated from the difference between the measurement values θ and the Bragg's angle θ0. Specific stress calculation formulae are determined with respect to the tetragonal system having the Laue symmetry 4/mmm. The stress is calculated from the slope of the linear line of plotted measurement results.
摘要:
A method for measuring a pole of a sample, using a reflection method, is effective substantially over all measurement regions ranging from the region of high-tilting-angle α of a conventional pole measuring to the in-plane diffraction region corresponding to low-tilting-angle α.
摘要:
A stress of a c-axis-oriented specimen of a tetragonal polycrystal is measured using X-ray diffraction under the assumption of a plane stress state. An X-ray optical system is set in the location of φ=0°, 45° or 90°. An X-ray diffracted at a crystal plane (the direction of the normal thereto is the direction of an angle of ψ) with the Miller indices (hkl) is detected. A diffraction angle θ in a strain state is measured in the vicinity of a Bragg's angle θ0 in a non-strain state. Strains ε with respect to a plurality of ψ are calculated from the difference between the measurement values θ and the Bragg's angle θ0. Specific stress calculation formulae are determined with respect to the tetragonal system having the Laue symmetry 4/mmm. The stress is calculated from the slope of the linear line of plotted measurement results.