利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

17 条记录 (耗时 0.026 秒)

    Method for manufacturing a liquid crystal display device with thin-film-transistors
    1.
    发明授权
    Method for manufacturing a liquid crystal display device with thin-film-transistors 失效
    用薄膜晶体管制造液晶显示装置的方法

    公开(公告)号：US5032536A

    公开(公告)日：1991-07-16

    申请号：US322982

    申请日：1989-03-14

    申请人： Ryouji Oritsuki ,  Masateru Wakui ,  Hirofumi Suzuki

    发明人： Ryouji Oritsuki ,  Masateru Wakui ,  Hirofumi Suzuki

    IPC分类号： H01L27/12 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/49 ,  H01L29/786

    CPC分类号： H01L29/4908 ,  G02F1/1368 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78669 ,  G02F1/133512 ,  G02F1/136213 ,  G02F2001/134345

    摘要： There is disclosed a liquid crystal color display of the active matrix type. A method of fabricating the display is initiated by depositing a transparent conductive material of indium tin oxide (ITO) as a thin layer onto a glass plate. Then chromium is deposited as an opaque film onto the ITO layer. The two layers are selectively removed, using a first mask pattern. A layer of an insulator consisting of Si.sub.3 N.sub.4 is deposited on the laminate within a reducing atmosphere of plasma. An I-type amorphous silicon layer is formed on the insulator layer. A highly doped N-type amorphous silicon layer is then formed. The N-type silicon layer, the I-type silicon layer, and the silicon nitride layer are selectively removed. An aluminum layer is formed on the laminate and then selectively etched away. Finally, the chromium layer is selectively etched away to form gates, gate leads, pixel electrodes, sources, drains and drain leads.

    摘要翻译： 公开了一种有源矩阵型的液晶彩色显示器。 通过将作为薄层的氧化铟锡（ITO）的透明导电材料沉积到玻璃板上来开始制造显示器的方法。 然后将铬作为不透明膜沉积到ITO层上。 使用第一掩模图案选择性地去除两个层。 由Si3N4构成的绝缘体层在等离子体的还原气氛中沉积在层压体上。 在绝缘体层上形成I型非晶硅层。 然后形成高掺杂的N型非晶硅层。 选择性地去除N型硅层，I型硅层和氮化硅层。 在层压板上形成铝层，然后选择性地蚀刻掉。 最后，选择性地蚀刻掉铬层以形成栅极，栅极引线，像素电极，源极，漏极和漏极引线。