FILM FORMATION DEVICE AND FILM FORMATION METHOD FOR FORMING METAL FILM
    6.
    发明申请
    FILM FORMATION DEVICE AND FILM FORMATION METHOD FOR FORMING METAL FILM 审中-公开
    薄膜形成装置和薄膜形成方法形成金属薄膜

    公开(公告)号:US20150014178A1

    公开(公告)日:2015-01-15

    申请号:US14371036

    申请日:2013-02-21

    IPC分类号: C25D17/00 C25D21/14

    摘要: Provided are a film formation device and a film formation method for forming a metal film, with which metal films with a desired thickness can be continuously formed on surfaces of a plurality of substrates. A film formation device 1A includes at least a positive electrode 11, a negative electrode 12, a solid electrolyte membrane 13 arranged on a surface of the positive electrode 12, between. the positive electrode and a substrate to serve as the negative electrode, and a power supply unit E adapted to apply a voltage across the positive electrode 11 and the substrate B. A voltage is applied across the positive electrode 11 and the substrate B to deposit metal on a surface of the substrate from metal ions contained in the solid electrolyte membrane 13, whereby a metal film F made of metal is formed, The positive electrode 11 is made of a porous body that allows a solution L containing metal ions to pass therethrough and supplies the metal ions to the solid electrolyte membrane 13.

    摘要翻译: 提供一种用于形成金属膜的成膜装置和成膜方法,可以在多个基板的表面上连续地形成具有所需厚度的金属膜。 成膜装置1A至少包括正极11,负极12,布置在正极12的表面上的固体电解质膜13。 正电极和用作负极的衬底,以及适于在正电极11和衬底B两端施加电压的电源单元E.跨正电极11和衬底B施加电压以沉积金属 在固体电解质膜13中的金属离子的表面上形成由金属制成的金属膜F.正极11由允许含有金属离子的溶液L通过的多孔体构成, 将金属离子供给固体电解质膜13。

    High-side switch circuit
    8.
    发明授权
    High-side switch circuit 有权
    高侧开关电路

    公开(公告)号:US08604842B2

    公开(公告)日:2013-12-10

    申请号:US13425606

    申请日:2012-03-21

    IPC分类号: H03K3/00 H03K5/153

    摘要: The high-side switch circuit includes a first output MOS transistor that is connected, at a first end thereof, to a power supply terminal. The high-side switch circuit includes a second output MOS transistor that is connected to a second end of the first output MOS transistor at a first end thereof and to a voltage output terminal at a second end thereof. The high-side switch circuit includes a current detecting circuit that detects a current flowing through the first output MOS transistor and outputs a detection signal. The high-side switch circuit includes a first gate driver that applies a first control voltage to a gate of the first output MOS transistor. The high-side switch circuit includes a second gate driver that applies a second control voltage to a gate of the second output MOS transistor.

    摘要翻译: 高侧开关电路包括在其第一端处连接到电源端子的第一输出MOS晶体管。 高侧开关电路包括第二输出MOS晶体管,其在第一端连接到第一输出MOS晶体管的第二端,并在其第二端连接到电压输出端。 高侧开关电路包括电流检测电路,其检测流过第一输出MOS晶体管的电流并输出检测信号。 高侧开关电路包括对第一输出MOS晶体管的栅极施加第一控制电压的第一栅极驱动器。 高侧开关电路包括向第二输出MOS晶体管的栅极施加第二控制电压的第二栅极驱动器。