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公开(公告)号：US07145169B2
公开(公告)日：2006-12-05
申请号：US11001640
申请日：2004-12-02
IPC分类号： H01L29/06
CPC分类号： H01L29/1054 , H01L29/1045 , H01L29/165 , H01L29/42356 , H01L29/42368 , H01L29/7835 , H01L29/7842 , H01L29/78624 , H01L29/78645
摘要： A field-effect transistor includes a silicon layer formed on an insulating film, a first-conductivity-type base and a second-conductivity-type source layers formed in the silicon layer being adjacent to each other, a second-conductivity-type drain layer formed in the silicon layer being separated from the source layer with the base layer being interposed therebetween, a gate-to-drain offset layer formed between the base and drain layers, having a resistance higher than that of the base layer, and a gate electrode formed on at least a surface of the base layer via a gate insulating film wherein the silicon layer in which the base layer is formed is a strained silicon layer.
摘要翻译： 场效应晶体管包括形成在绝缘膜上的硅层，形成在硅层中彼此相邻的第一导电型基极和第二导电型源极层，第二导电型漏极层 形成在所述硅层中的所述基极层与所述源极层分离，形成在所述基极层和漏极层之间的栅极 - 漏极偏移层，其电阻高于所述基极层的电阻，栅极电极 在基底层的至少一个表面上经由栅极绝缘膜形成，其中形成有基底层的硅层是应变硅层。
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公开(公告)号：US20050230675A1
公开(公告)日：2005-10-20
申请号：US11001640
申请日：2004-12-02
IPC分类号： H01L31/12 , H01L21/336 , H01L29/10 , H01L29/165 , H01L29/423 , H01L29/74 , H01L29/78 , H01L29/786
CPC分类号： H01L29/1054 , H01L29/1045 , H01L29/165 , H01L29/42356 , H01L29/42368 , H01L29/7835 , H01L29/7842 , H01L29/78624 , H01L29/78645
摘要： According to the present invention, there is provided a field-effect transistor comprising: a silicon layer formed on an insulating film; a first-conductivity-type base layer formed in said silicon layer; a second-conductivity-type source layer formed in said silicon layer so as to be adjacent to said first-conductivity-type base layer; a second-conductivity-type drain layer formed in said silicon layer so as to be separated from said second-conductivity-type source layer with said first-conductivity-type base layer being interposed therebetween; a gate-to-drain offset layer formed between said first-conductivity-type base layer and said second-conductivity-type drain layer in said silicon layer, and having a resistance higher than that of said first-conductivity-type base layer; and a gate electrode formed on at least a surface of said first-conductivity-type base layer via a gate insulating film, wherein said silicon layer in which said first-conductivity-type base layer is formed is a strained silicon layer.
摘要翻译： 根据本发明，提供了一种场效应晶体管，包括：在绝缘膜上形成的硅层; 形成在所述硅层中的第一导电型基底层; 形成在所述硅层中以与所述第一导电型基底层相邻的第二导电型源极层; 形成在所述硅层中的第二导电型漏极层，以与所述第二导电型源极层分离，所述第一导电型基极层插入其间; 在所述硅层中形成在所述第一导电型基极层和所述第二导电型漏极层之间并具有高于所述第一导电型基极层的电阻的栅极至漏极偏移层; 以及通过栅极绝缘膜形成在所述第一导电型基底层的至少表面上的栅电极，其中形成有所述第一导电型基底层的所述硅层是应变硅层。
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3.发明申请公开(公告)号：US20060043428A1
公开(公告)日：2006-03-02
申请号：US11211441
申请日：2005-08-26
IPC分类号： H01L27/10
CPC分类号： H01L29/78696 , H01L27/1203 , H01L29/78624 , H01L29/78645 , H01L29/78648
摘要： Power MISFET 20 includes SIO substrate 4 composed of first silicon substrate 1, BOX layer 2 formed on the front surface of first silicon substrate 1 and silicon substrate 3 formed on BOX layer 2. Second silicon substrate 3 is provided with lightly doped-impurity offset layer 5, P layer 6, N+ source layer 7, and N+ drain layer 8. First gate electrode 10 made of poly crystalline silicon is formed on Player 6 through gate insulation film 9. Second gate electrode 15 is formed on the back surface of first silicon substrate 1 while BOX layer 2 functions as a gate insulation film.
摘要翻译： 功率MISFET 20包括由第一硅衬底1，形成在第一硅衬底1的前表面上的BOX层2和形成在BOX层2上的硅衬底3组成的SIO衬底4.第二硅衬底3设置有轻掺杂杂质偏移层 5，P层6，N +源极层7和N +漏极层8.由多晶硅制成的第一栅电极10通过栅极绝缘膜9形成在第六栅极绝缘膜9上。第二栅电极15形成在第一硅 衬底1，而BOX层2用作栅极绝缘膜。
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公开(公告)号：US07489018B2
公开(公告)日：2009-02-10
申请号：US11405672
申请日：2006-04-18
IPC分类号： H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0696 , H01L29/4933 , H01L29/7397 , H01L29/7824 , H01L29/7831 , H01L29/78603 , H01L29/78624
摘要： A transistor comprises: an insulating layer; a semiconductor layer provided on a major surface of the insulating layer; a gate insulating layer provided on the base region; and a gate electrode provided on the gate insulating layer. The semiconductor layer has a source portion having a plurality of source regions of a first conductivity type and a plurality of base contact regions of a second conductivity type, the source regions being alternated with the base contact regions, a drain portion of the first conductivity type, and a base region of the second conductivity type provided between the source portion and the drain portion, the base region being in contact with the source regions and the base contact regions. A junction between the source regions and the base region is closer to the drain portion side than a junction between the base contact regions and the base region.
摘要翻译： 晶体管包括：绝缘层; 设置在所述绝缘层的主表面上的半导体层; 设置在所述基底区域上的栅极绝缘层; 以及设置在栅极绝缘层上的栅电极。 半导体层具有源极部分，具有多个第一导电类型的源极区域和多个第二导电类型的基极接触区域，源极区域与基极接触区域交替，第一导电类型的漏极部分 以及设置在源极部分和漏极部分之间的第二导电类型的基极区域，基极区域与源极区域和基极接触区域接触。 源极区域和基极区域之间的接合部比基极接触区域和基极区域之间的接合部更靠近漏极部分侧。
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公开(公告)号：US20060231894A1
公开(公告)日：2006-10-19
申请号：US11405672
申请日：2006-04-18
IPC分类号： H01L27/12
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0696 , H01L29/4933 , H01L29/7397 , H01L29/7824 , H01L29/7831 , H01L29/78603 , H01L29/78624
摘要： A transistor comprises: an insulating layer; a semiconductor layer provided on a major surface of the insulating layer; a gate insulating layer provided on the base region; and a gate electrode provided on the gate insulating layer. The semiconductor layer has a source portion having a plurality of source regions of a first conductivity type and a plurality of base contact regions of a second conductivity type, the source regions being alternated with the base contact regions, a drain portion of the first conductivity type, and a base region of the second conductivity type provided between the source portion and the drain portion, the base region being in contact with the source regions and the base contact regions. A junction between the source regions and the base region is closer to the drain portion side than a junction between the base contact regions and the base region.
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公开(公告)号：US09205111B2
公开(公告)日：2015-12-08
申请号：US10583860
申请日：2004-12-22
申请人： Takashi Nishimura , Masaki Yasukawa
发明人： Takashi Nishimura , Masaki Yasukawa
IPC分类号： C12N5/00 , C12N5/08 , C12N15/63 , C07H21/04 , A01N63/00 , A61K39/395 , A61K48/00 , A61K35/26 , A61K39/00 , C12N5/0783 , C12N15/85 , C12N5/16
CPC分类号： A61K35/26 , A61K39/0011 , A61K39/395 , A61K2039/5156 , C07H21/04 , C12N5/0636 , C12N5/16 , C12N15/63 , C12N15/85
摘要： A novel process for preparing tumor-specific T cells is disclosed. According to the invention, antitumor-active, tumor-specific T cells are prepared by transducing a TCR gene from a tumor-specific CTL into antitumor-active T cells that have been nonspecifically activated, thus enabling tumor-specific cellular immunotherapy to be carried out from even small amounts of blood. MHC class I-restricted, tumor-specific Th cells are obtained by the method, allowing for the production of cells that react with tumor cells expressing an MHC class I molecule and show a helper activity and an antitumor activity.
摘要翻译： 公开了一种制备肿瘤特异性T细胞的新方法。 根据本发明，通过将来自肿瘤特异性CTL的TCR基因转导至非特异性激活的抗肿瘤活性T细胞来制备抗肿瘤活性的肿瘤特异性T细胞，从而能够进行肿瘤特异性细胞免疫治疗 从少量的血液。 通过该方法获得MHC I类限制性肿瘤特异性Th细胞，允许产生与表达MHC I类分子的肿瘤细胞反应并显示辅助活性和抗肿瘤活性的细胞。
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公开(公告)号：US20130202588A1
公开(公告)日：2013-08-08
申请号：US13700355
申请日：2011-05-27
申请人： Takashi Nishimura
发明人： Takashi Nishimura
IPC分类号： A61K39/395 , A61K31/7068
CPC分类号： A61K39/3955 , A61K31/7068 , A61K39/39558 , A61K45/06 , C07K16/2815 , C07K16/2866 , A61K2300/00
摘要： An objective of the present invention is to provide novel therapeutic agents for cancer, which have an excellent antitumor effect in cancer patients by enhancing their immune function. The present inventors discovered that the administration of at IL-6 inhibitor and/or gemcitabine or a salt thereof to tumor-bearing organisms yields an excellent antitumor T cell response-enhancing effect, and completed the present invention. In addition, the present inventors discovered that the T cell response-enhancing effect produces an excellent antitumor effect.
摘要翻译： 本发明的目的是提供新的癌症治疗剂，其通过增强其免疫功能在癌症患者中具有优异的抗肿瘤作用。 本发明人发现IL-6抑制剂和/或吉西他滨或其盐对荷瘤生物的产生产生优异的抗肿瘤T细胞应答增强作用，并完成了本发明。 此外，本发明人发现，T细胞应答增强效果产生优异的抗肿瘤效果。
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8.发明申请ELECTROMECHANICAL SYSTEM FOR SELECTING WEIGHTS IN FITNESS STATION WEIGHTS TOWERS 审中-公开用于选择适合车站权重的机电系统公开(公告)号：US20120100961A1
公开(公告)日：2012-04-26
申请号：US13321510
申请日：2010-05-17
申请人： Takashi Nishimura
发明人： Takashi Nishimura
IPC分类号： A63B21/005 , A63B21/062
CPC分类号： A63B21/062 , A63B21/0628 , A63B21/063 , A63B24/00
摘要： An electromechanical system for selecting weights in fitness station weight towers, wherein a vertical hollow rod, fixed to the cursor which fastens to the steel cable, which lifts the plates of unit weight, extends traversing central holes of these plates, traversing the upper wall of the base of the tower, which is hollow, this rod having a rotating shaft or screw that moves the weight selector upwards and downwards, mounted on the rod by bearings, and projecting below this bearing where it has at the end radial teeth that incase between protrusions existing in a circular low relief of a pulley, which is mounted on a bearing whose shaft is collinear to the rod and fixed to the lower face of the base, this pulley having a channel for a belt, driven by an electric motor fixed to the base.
摘要翻译： 一种用于在健身站重量塔中选择重量的机电系统，其中固定到光标上的垂直中空杆，其固定到钢缆上，该钢丝绳提升单元重量的板，延伸穿过这些板的中心孔，穿过上述 塔的底部是中空的，该杆具有通过轴承将重量选择器向上和向下移动的旋转轴或螺钉，并且在该轴承的下方突出，在该轴承处具有位于其之间的径向齿 存在于滑轮的圆形低浮雕中的突起，其安装在轴与杆共线并固定到基座的下表面的轴承上，该滑轮具有用于固定到 的基地。
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公开(公告)号：US20120094809A1
公开(公告)日：2012-04-19
申请号：US13262138
申请日：2010-03-30
申请人： Takashi Nishimura
发明人： Takashi Nishimura
IPC分类号： A63B21/06
CPC分类号： A63B23/12 , A63B21/062 , A63B21/0628 , A63B21/063 , A63B21/4047 , A63B23/03525 , A63B23/0494 , A63B24/0087 , A63B2225/107
摘要： A floor of a gym's weight room is configured to encompass the installation of weight stations with weight towers controlled remotely from a control panel, with said weight station assembled atop a weight room floor. The floor of the gym, for each station-tower combination, includes two reinforced boxes embedded in the floor, each having an opening at floor level, wherein one box is located below the base of the weight station and one box is located in front of the respective weight tower, preferably positioned far from the station, the two boxes being connected by at least two parallel tubes located beneath the level of the gym's floor, and wherein the interior of each box is affixed with a cable pulley and bearing, each cable pulley being at a level so that the horizontal section of a steel cable runs toward a center of one of the tubes.
摘要翻译： 健身房的重量室的地板被配置为包括重量台的安装，其具有从控制面板远程控制的重量塔，所述重量站组装在重量室的地板上。 健身房的地板，对于每个站 - 塔组合，包括两个加强箱嵌入地板，每个在地面上具有开口，其中一个箱位于重量站的底部下方，一个箱位于 相应的重量塔，优选地位于远离工位的两个箱体通过位于健身房地板的水平面下方的至少两个平行管连接，并且其中每个箱体的内部固定有电缆滑轮和轴承，每个电缆 滑轮处于水平面，使钢缆的水平段朝向其中一个管的中心延伸。
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公开(公告)号：US07938762B2
公开(公告)日：2011-05-10
申请号：US12304404
申请日：2006-11-10
申请人： Takashi Nishimura
发明人： Takashi Nishimura
IPC分类号： A63B21/008 , A63B21/005 , A63B21/062
CPC分类号： A63B21/0628 , A63B21/063 , A63B24/00
摘要： An automatic weight stack controller for fitness units adapted to a frame provided with weights piled up is disclosed, wherein the weights are provided with central vertical holes having inner circular grooves and a tube fit into said central holes, said tube being provided with radial holes disposed at the level of each weight wherein balls are housed, so that said balls can be pushed towards the grooves by a piston that slides vertically inside the tube, having conical ends and threaded on a vertical threaded bar centrally to the tube, where there is an eyelet for the steel cable designed to raise the weights, the selection of weights being carried out through a panel of instruments, with a digital display, and buttons to increase or decrease the number of weights.
摘要翻译： 公开了一种用于健身器具的自动重量堆叠控制器，其适用于装有堆重物的框架，其中重物设置有具有内圆形凹槽的中心垂直孔和配合到所述中心孔中的管，所述管设置有径向孔， 在其中容纳球的每个重量的水平面上，使得所述球可以通过在管内垂直滑动的活塞而被推向凹槽，该活塞具有锥形端并且在垂直螺纹杆上螺纹连接到管的中心，其中存在 设计用于提高重量的钢丝绳的孔眼，通过一组仪器进行的重量选择，具有数字显示器，以及用于增加或减少重量的按钮。
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