Laser annealing method and device
    1.
    发明授权
    Laser annealing method and device 有权
    激光退火方法及装置

    公开(公告)号:US08629522B2

    公开(公告)日:2014-01-14

    申请号:US13608818

    申请日:2012-09-10

    IPC分类号: H01L27/14 H01L31/00

    摘要: A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

    摘要翻译: 一种激光退火方法,用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火,所述方法包括以下步骤:产生线性偏振矩形激光束,其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束,使矩形激光束被引入到基板的表面,并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

    Laser annealing method and apparatus
    2.
    发明授权
    Laser annealing method and apparatus 有权
    激光退火方法和装置

    公开(公告)号:US08598050B2

    公开(公告)日:2013-12-03

    申请号:US13001311

    申请日:2009-06-19

    IPC分类号: H01L21/00

    摘要: Disclosed are a laser annealing method and apparatus capable of forming a crystalline semiconductor thin film on the entire surface of a substrate without sacrificing the uniformity of crystallinity in a seam portion in a long-axis direction of laser light, the crystalline semiconductor thin film having good properties and high uniformity to an extent that the seam portion is not visually recognizable. During the irradiation of a linear beam, portions corresponding to the edges of the linear beam are shielded by a mask 10 which is disposed on the optical path of a laser light 2, and the mask 10 is operated so that the amount of shielding is periodically increased and decreased.

    摘要翻译: 公开了一种激光退火方法和装置,其能够在不牺牲激光长轴方向的接缝部分中的结晶度的均匀性的基板的整个表面上形成结晶半导体薄膜,该结晶半导体薄膜具有良好的 性能和高均匀性,使得接缝部分不能在视觉上识别。 在直线光束的照射期间,对应于直线光束的边缘的部分被设置在激光2的光路上的掩模10屏蔽,并且掩模10被操作以使屏蔽量周期性地 增加和减少。

    Laser annealing method and apparatus
    3.
    发明授权
    Laser annealing method and apparatus 有权
    激光退火方法和装置

    公开(公告)号:US08446924B2

    公开(公告)日:2013-05-21

    申请号:US13418653

    申请日:2012-03-13

    IPC分类号: H01S3/10

    摘要: In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.

    摘要翻译: 在透镜阵列式均化器光学系统的情况下,入射到入射角度和强度的激光束1进入长轴聚光光学系统的大尺寸透镜(长轴聚光透镜22) 通过在长轴透镜阵列20a和20b沿与线性光束(X方向)的长轴方向对应的方向往复运动的同时通过执行激光照射而改变每一次的后侧。 因此,垂直条纹显着减少。 此外,通过进行激光照射来改变进入设置在后侧的短轴聚光光学系统的大尺寸透镜(投影透镜30)的激光束1的入射角度和强度, 短轴透镜阵列26a和26b在与线性光束(Y方向)的短轴方向对应的方向上往复运动。 因此,水平条纹显着减少。

    LASER ANNEALING METHOD AND APPARATUS
    4.
    发明申请
    LASER ANNEALING METHOD AND APPARATUS 有权
    激光退火方法和装置

    公开(公告)号:US20110097907A1

    公开(公告)日:2011-04-28

    申请号:US13001311

    申请日:2009-06-19

    IPC分类号: H01L21/268 B23K26/06

    摘要: Disclosed are a laser annealing method and apparatus capable of forming a crystalline semiconductor thin film on the entire surface of a substrate without sacrificing the uniformity of crystallinity in a seam portion in a long-axis direction of laser light, the crystalline semiconductor thin film having good properties and high uniformity to an extent that the seam portion is not visually recognizable.During the irradiation of a linear beam, portions corresponding to the edges of the linear beam are shielded by a mask 10 which is disposed on the optical path of a laser light 2, and the mask 10 is operated so that the amount of shielding is periodically increased and decreased.

    摘要翻译: 公开了一种激光退火方法和装置,其能够在不牺牲激光长轴方向的接缝部分中的结晶度的均匀性的基板的整个表面上形成结晶半导体薄膜,该结晶半导体薄膜具有良好的 性能和高均匀性,使得接缝部分不能在视觉上识别。 在直线光束的照射期间,对应于直线光束的边缘的部分被设置在激光2的光路上的掩模10屏蔽,并且掩模10被操作以使屏蔽量周期性地 增加和减少。

    Laser irradiation apparatus
    5.
    发明授权
    Laser irradiation apparatus 有权
    激光照射装置

    公开(公告)号:US07864823B2

    公开(公告)日:2011-01-04

    申请号:US12406734

    申请日:2009-03-18

    摘要: A laser irradiation apparatus is provided in which the occurrence of adverse effects on an object to be irradiated with a laser beam due to the difference in the polarization state between pulsed laser beams can be prevented or significantly reduced when the pulsed laser beams emitted from two laser light sources are guided to pass through the same optical path for irradiation of an object to be irradiated with the pulsed laser beams. The laser irradiation apparatus is provided with a first laser light source 3, a second laser light source 4, an optical path combining optical member 7 which guides the pulsed laser beams emitted from the first laser light source 3 and the second laser light source 4 to pass through the same optical path, and a polarization control member 9 which controls polarization state of the pulsed laser beam from the optical path combining optical member 7. The polarization control member 9 includes a first polarization control portion 13 and a second polarization control portion 15 through which beam components of the pulsed laser beam pass. The polarization states of the beam components that have passed through the first polarization control portion 13 and the beam components that have passed through the second polarization control portion 15 become different from each other. The beam components in different polarization states are superimposed on each other on a surface to be irradiated with the laser beam of the object to be irradiated with the laser beam.

    摘要翻译: 提供了一种激光照射装置,其中当从两个激光器发射的脉冲激光束时,可以防止或显着减少由于脉冲激光束之间的偏振状态的差异而对被照射激光束的物体的不利影响的发生 引导光源通过相同的光路以照射被照射的脉冲激光束的物体。 激光照射装置设置有第一激光光源3,第二激光光源4,将从第一激光光源3和第二激光光源4发射的脉冲激光束引导到第二激光光源4的光路组合光学部件7 通过相同的光路,以及偏振控制部件9,其从光路组合光学部件7控制脉冲激光束的偏振状态。偏光控制部件9包括第一偏光控制部13和第二偏光控制部15 通过脉冲激光束的光束分量通过。 已经通过第一偏振控制部分13的光束分量和已经通过第二偏振控制部分15的光束分量的偏振状态彼此不同。 不同极化状态的光束分量在被激光束照射物体的激光束照射的表面上相互叠加。

    Laser annealing apparatus and method
    6.
    发明授权
    Laser annealing apparatus and method 有权
    激光退火装置及方法

    公开(公告)号:US08106341B2

    公开(公告)日:2012-01-31

    申请号:US12355871

    申请日:2009-01-19

    摘要: The irradiation unevenness caused by drift occurring in a beam short-axis direction is reduced without adding a new beam shaping unit and affecting the propagation characteristic of a beam in an optical resonator. A position deviation detector for detecting a position deviation of a laser beam before passing through a beam shaping optical system, an angle deviation detector for detecting an angle deviation of the laser beam before passing through the beam shaping optical system, a deflection mirror for deflecting the laser beam, which is disposed in an optical path between a laser and an object (substrate), and a mirror controller for controlling orientation of the deflection mirror, based on detection data obtained using the position deviation detector and the angle deviation detector so as to eliminate the position deviation from a reference irradiation position in the short-axis direction of a linear beam on a surface to be irradiated.

    摘要翻译: 在光束短轴方向上产生的漂移引起的照射不均匀性减小,而不增加新的光束整形单元并影响光谐振器中的光束的传播特性。 一种位置偏差检测器,用于检测通过光束整形光学系统之前的激光束的位置偏差;角度偏差检测器,用于检测通过光束整形光学系统的激光束的角度偏差;偏转镜, 基于使用位置偏差检测器和角度偏差检测器获得的检测数据,设置在激光和物体(基板)之间的光路中的激光束和用于控制偏转镜的取向的反射镜控制器,以便 消除与要照射的表面上的线性光束的短轴方向上的参考照射位置的位置偏差。

    Laser Annealing Apparatus and Method
    7.
    发明申请
    Laser Annealing Apparatus and Method 有权
    激光退火装置及方法

    公开(公告)号:US20090218475A1

    公开(公告)日:2009-09-03

    申请号:US12355871

    申请日:2009-01-19

    IPC分类号: G01J1/20 A61N5/00

    摘要: The irradiation unevenness caused by drift occurring in a beam short-axis direction is reduced without adding a new beam shaping unit and affecting the propagation characteristic of a beam in an optical resonator. A position deviation detector for detecting a position deviation of a laser beam before passing through a beam shaping optical system, an angle deviation detector for detecting an angle deviation of the laser beam before passing through the beam shaping optical system, a deflection mirror for deflecting the laser beam, which is disposed in an optical path between a laser and an object (substrate), and a mirror controller for controlling orientation of the deflection mirror, based on detection data obtained using the position deviation detector and the angle deviation detector so as to eliminate the position deviation from a reference irradiation position in the short-axis direction of a linear beam on a surface to be irradiated.

    摘要翻译: 在光束短轴方向上产生的漂移引起的照射不均匀性减小,而不增加新的光束整形单元并影响光谐振器中的光束的传播特性。 一种位置偏差检测器,用于检测通过光束整形光学系统之前的激光束的位置偏差;角度偏差检测器,用于检测通过光束整形光学系统的激光束的角度偏差;偏转镜, 基于使用位置偏差检测器和角度偏差检测器获得的检测数据,设置在激光和物体(基板)之间的光路中的激光束和用于控制偏转镜的取向的反射镜控制器,以便 消除与要照射的表面上的线性光束的短轴方向上的参考照射位置的位置偏差。

    LASER ANNEALING METHOD AND APPARATUS
    8.
    发明申请
    LASER ANNEALING METHOD AND APPARATUS 有权
    激光退火方法和装置

    公开(公告)号:US20110008973A1

    公开(公告)日:2011-01-13

    申请号:US12811818

    申请日:2008-05-30

    摘要: In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.

    摘要翻译: 在透镜阵列式均化器光学系统的情况下,入射到入射角度和强度的激光束1进入长轴聚光光学系统的大尺寸透镜(长轴聚光透镜22) 通过在长轴透镜阵列20a和20b沿与线性光束(X方向)的长轴方向对应的方向往复运动的同时通过执行激光照射而改变每一次的后侧。 因此,垂直条纹显着减少。 此外,通过进行激光照射来改变进入设置在后侧的短轴聚光光学系统的大尺寸透镜(投影透镜30)的激光束1的入射角度和强度, 短轴透镜阵列26a和26b在与线性光束(Y方向)的短轴方向对应的方向上往复运动。 因此,水平条纹显着减少。

    LASER ANNEALING METHOD AND LASER ANNEALING DEVICE
    9.
    发明申请
    LASER ANNEALING METHOD AND LASER ANNEALING DEVICE 有权
    激光退火方法和激光退火装置

    公开(公告)号:US20100221898A1

    公开(公告)日:2010-09-02

    申请号:US12159259

    申请日:2006-11-07

    IPC分类号: H01L21/268 B23K26/06

    摘要: The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array 26 or a light guide 36 and concentrating optical systems 28 and 44 or by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substrate 3 can be enhanced as much, it is possible to improve the processing ability of the laser annealing.

    摘要翻译: 施加到非晶半导体膜(非晶硅膜)的矩形激光束的短边方向上的能量分布均匀。 可以通过使用柱面透镜阵列26或光导36以及集中光学系统28和44或通过使用包括衍射的光学系统在矩形激光束的短边方向上的能量分布 光学元件。 因此,由于施加到非晶半导体膜的激光束的有效能量范围变宽,能够提高基板3的输送速度,所以能够提高激光退火的处理能力。

    LASER ANNEALING METHOD AND DEVICE
    10.
    发明申请
    LASER ANNEALING METHOD AND DEVICE 有权
    激光退火方法和装置

    公开(公告)号:US20100022102A1

    公开(公告)日:2010-01-28

    申请号:US11916687

    申请日:2006-09-12

    IPC分类号: H01L21/268 H01L21/64

    摘要: A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

    摘要翻译: 一种激光退火方法,用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火,所述方法包括以下步骤:产生线性偏振矩形激光束,其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束,使矩形激光束被引入到基板的表面,并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。