公开(公告)号：US10947154B2

公开(公告)日：2021-03-16

申请号：US16473893

申请日：2017-12-22

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Camille Morin ,  Arnaud Huignard ,  Mathieu Urien

IPC: B32B15/04 ,  B32B17/06 ,  C03C17/36

Abstract: A heating device equipped with a chamber defining a cavity, includes a door or wall incorporating a multiple glazing, the glazing including at least one transparent substrate coated on each face with a stack of thin layers, namely: on a first face, turned toward the cavity, a first stack that reflects heat essentially by virtue of one or more functional layers based on indium tin oxide; and on the other face, turned toward the exterior of the device, a second stack that reflects heat essentially by virtue of one or more functional layers based on a metal chosen from gold or silver.

公开(公告)号：US20140338741A1

公开(公告)日：2014-11-20

申请号：US14357470

申请日：2012-11-09

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Joerg Palm ,  Mathieu Urien ,  Gerard Ruitenberg ,  Charles Leyder ,  Andreas Heiss ,  Erwan Mahe ,  Delphine Dupuy

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0296

CPC classification number: H01L31/022425 ,  H01L31/02167 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

Abstract: A subject-matter of the invention is a conducting substrate (1) for a photovoltaic cell, comprising a carrier substrate (2) and an electrode coating (6) formed on the carrier substrate (2). The electrode coating (6) comprises a main molybdenum-based layer (8) formed on the carrier substrate (2), a barrier layer to selenization (10) formed on the main molybdenum-based layer (8) and, on the barrier layer to selenization (10), an upper layer (12) based on a metal M capable of forming, after sulfurization and/or selenization, an ohmic contact layer with a photoactive semiconducting material. The barrier layer to selenization (10) has a thickness of less than or equal to 50 nm, preferably of less than or equal to 30 nm, more preferably of less than or equal to 20 nm.

Abstract translation: 本发明的主题是用于光伏电池的导电基板（1），其包括载体基板（2）和形成在载体基板（2）上的电极涂层。 电极涂层（6）包括形成在载体基板（2）上的主钼基层（8），形成在主钼基层（8）上的阻挡层（硒化）（10），并且在阻挡层 基于能够在硫化和/或硒化后形成具有光敏半导体材料的欧姆接触层的金属M的上层（12）。 硒化（10）的阻挡层具有小于或等于50nm，优选小于或等于30nm，更优选小于或等于20nm的厚度。