公开(公告)号：US10075147B2

公开(公告)日：2018-09-11

申请号：US14642054

申请日：2015-03-09

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Moon Chul Lee ,  Jea Shik Shin ,  Young Gyu Lee ,  Ho Soo Park ,  Duck Hwan Kim

IPC: H03H9/17 ,  H03H3/02

CPC classification number: H03H9/173 ,  H03H2003/021

Abstract: An acoustic resonator is provided in which loss of acoustic waves in a transverse direction may be reduced through a cavity formed in an acoustic resonance unit including a first electrode, a piezoelectric layer, and a second electrode, and in which acoustic waves in a longitudinal direction may be reduced by forming an air gap between the acoustic resonance unit and a substrate. Whereby, a quality factor may be improved.

公开(公告)号：US10511281B2

公开(公告)日：2019-12-17

申请号：US15232116

申请日：2016-08-09

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Ho Soo Park ,  Jea Shik Shin ,  Sang Uk Son ,  Yeong Gyu Lee ,  Moon Chul Lee ,  Duck Hwan Kim ,  Chul Soo Kim

IPC: H03H9/05

Abstract: An acoustic wave resonator includes a substrate; a resonating part disposed on a first surface of the substrate and including a first electrode, a piezoelectric layer, and a second electrode; and a cap disposed on the first surface of the substrate and including an accommodating part accommodating the resonating part. The resonating part is configured to be operated by either one or both of a signal output from a first device substrate disposed facing a second surface of the substrate on an opposite side of the substrate from the first surface of the substrate and a signal output from a second device substrate disposed on the cap.

公开(公告)号：US10263598B2

公开(公告)日：2019-04-16

申请号：US14925230

申请日：2015-10-28

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Jea Shik Shin ,  Sang Uk Son ,  Yeong Gyu Lee ,  Moon Chul Lee ,  Ho Soo Park ,  Duck Hwan Kim ,  Chul Soo Kim

IPC: H01L41/047 ,  H03H9/17 ,  H03H3/02

Abstract: An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonance part including a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes; and a substrate disposed below the resonance part. The piezoelectric layer is disposed on a flat surface of the first electrode.

公开(公告)号：US09787280B2

公开(公告)日：2017-10-10

申请号：US14638529

申请日：2015-03-04

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Sang Uk Son ,  Duck Hwan Kim ,  Jea Shik Shin ,  Yeong Gyu Lee ,  Chul Soo Kim ,  Moon Chul Lee ,  Ho Soo Park ,  Jie Ai Yu

IPC: H03H9/02 ,  H03H3/04 ,  H03H3/02 ,  H03H9/17

CPC classification number: H03H9/02086 ,  H03H3/02 ,  H03H3/04 ,  H03H9/173 ,  H03H2003/0414

Abstract: There is provided an acoustic resonator including: a resonance part including a first electrode, a second electrode, and a piezoelectric layer interposed between the first and second electrodes; and a substrate provided below the resonance part, wherein the substrate includes at least one via hole penetrating through the substrate and a connective conductor formed in the via hole and connected to at least one of the first and second electrodes. Therefore, reliability of the connective conductor formed in the substrate may be secured.

公开(公告)号：US09998094B2

公开(公告)日：2018-06-12

申请号：US14918242

申请日：2015-10-20

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Jea Shik Shin ,  Yeong Gyu Lee ,  Ho Soo Park

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/13

CPC classification number: H03H9/171 ,  H03H9/02118 ,  H03H9/02125 ,  H03H9/132 ,  H03H9/17 ,  H03H9/173

Abstract: A bulk acoustic wave resonator may include: a piezoelectric layer including a piezoelectric material; a first electrode disposed on one surface of the piezoelectric layer; a second electrode disposed on the another surface of the piezoelectric layer; and a frame disposed on the one surface of the piezoelectric layer and surrounding the first electrode, wherein the frame is spaced apart from the first electrode by a predetermined gap.

公开(公告)号：US10110197B2

公开(公告)日：2018-10-23

申请号：US14934619

申请日：2015-11-06

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Jea Shik Shin ,  Sang Uk Son ,  Duck Hwan Kim

IPC: H03H9/17 ,  H03H9/54 ,  H03H9/58 ,  H03H9/02 ,  H03H3/02

Abstract: A bulk acoustic wave resonator and a filter in which partial thicknesses of protection layers or reflection layers thereof are differently formed are provided. The bulk acoustic wave resonator includes a bulk acoustic wave resonating part comprising a piezoelectric layer, and a reflection layer configured to reflect waves of a resonance frequency generated by the piezoelectric layer based on a signal applied to the bulk acoustic wave resonating part. A thickness of a portion of the reflection layer is different from a thickness of a remaining portion thereof.

公开(公告)号：US10069472B2

公开(公告)日：2018-09-04

申请号：US15007725

申请日：2016-01-27

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Moon Chul Lee ,  Yeong Gyu Lee ,  Chul Soo Kim ,  Jea Shik Shin ,  Duck Hwan Kim ,  Sang Uk Son

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/58 ,  H03H9/60

CPC classification number: H03H9/02133 ,  H03H9/173 ,  H03H9/587 ,  H03H9/605

Abstract: A bulk acoustic wave resonator including a substrate; an air cavity formed on the substrate; and a resonating part formed on the air cavity and comprising a first electrode, a piezoelectric layer, and a second electrode which are sequentially laminated, wherein a cross section of the air cavity has a short side, a long side opposing the short side, a first lateral side and a second lateral side connecting the short side and the long side to each other, the first and second lateral sides are inclined, and a surface roughness of the first electrode, the piezoelectric layer, the second electrode, or any combination thereof is between 1 nm and 100 nm.