公开(公告)号：US20220028466A1

公开(公告)日：2022-01-27

申请号：US17324787

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bohchang Kim ,  Wontaeck Jung ,  Kuihan Ko ,  Jaeyong Jeong

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26 ,  G11C29/42

Abstract: A memory device including: a memory cell array including a plurality of memory cells forming a plurality of strings in a vertical direction with a substrate; and a control logic configured to detect a not-open string (N/O string) from the plurality of strings in response to a write command and convert pieces of target data to be programmed on a plurality of target memory cells in the N/O string so that the pieces of target data have a value that limits a number of times a program voltage is applied to the plurality of target memory cells.

公开(公告)号：US20230333782A1

公开(公告)日：2023-10-19

申请号：US18340950

申请日：2023-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wontaeck Jung ,  Bohchang Kim ,  Kuihan Ko ,  Jaeyong Jeong

IPC: G11C16/04 ,  G11C16/10 ,  G11C16/14 ,  G06F3/06

CPC classification number: G06F3/0679 ,  G06F3/0604 ,  G06F3/0652 ,  G06F3/0655 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/14 ,  H10B43/27

Abstract: A memory system includes a first memory device including a plurality of first memory blocks each including a plurality of first memory cells stacked in a direction perpendicular to a substrate; and a memory controller configured to control a memory operation of the first memory device. The memory controller is configured to select and operate any one of different control schemes for each of the first memory blocks based on a number of first not-open (N/O) strings included in each of the first memory blocks, respectively.

公开(公告)号：US11726722B2

公开(公告)日：2023-08-15

申请号：US17307317

申请日：2021-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wontaeck Jung ,  Bohchang Kim ,  Kuihan Ko ,  Jaeyong Jeong

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/10 ,  G11C16/14 ,  H10B43/27

CPC classification number: G06F3/0679 ,  G06F3/0604 ,  G06F3/0652 ,  G06F3/0655 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/14 ,  H10B43/27

Abstract: A memory system includes a first memory device including a plurality of first memory blocks each including a plurality of first memory cells stacked in a direction perpendicular to a substrate; and a memory controller configured to control a memory operation of the first memory device. The memory controller is configured to select and operate any one of different control schemes for each of the first memory blocks based on a number of first not-open (N/O) strings included in each of the first memory blocks, respectively.

公开(公告)号：US12230343B2

公开(公告)日：2025-02-18

申请号：US17324787

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bohchang Kim ,  Wontaeck Jung ,  Kuihan Ko ,  Jaeyong Jeong

IPC: G11C29/04 ,  G11C16/14 ,  G11C16/26 ,  G11C16/34

Abstract: A memory device including: a memory cell array including a plurality of memory cells forming a plurality of strings in a vertical direction with a substrate; and a control logic configured to detect a not-open string (N/O string) from the plurality of strings in response to a write command and convert pieces of target data to be programmed on a plurality of target memory cells in the N/O string so that the pieces of target data have a value that limits a number of times a program voltage is applied to the plurality of target memory cells.