公开(公告)号：US20180342305A1

公开(公告)日：2018-11-29

申请号：US15926419

申请日：2018-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-SOO CHA ,  YOUNG-SEOP SHIM ,  DAE-WON KIM

IPC: G11C16/34 ,  G11C16/26 ,  G06F13/16 ,  G06F13/40

CPC classification number: G11C16/3404 ,  G06F13/1673 ,  G06F13/4068 ,  G11C11/5642 ,  G11C13/0033 ,  G11C13/0035 ,  G11C13/004 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3436 ,  G11C16/3495 ,  G11C2013/0057

Abstract: A method of operating a storage device includes: performing a background read operation on a nonvolatile memory by using a default read voltage level; performing a read retry operation on the nonvolatile memory by using a corrected read voltage level when the background read operation fails; storing the corrected read voltage level in a history buffer when the read retry operation succeeds; and performing a host read operation on the nonvolatile memory by using the history buffer in response to a read request received from a host.