公开(公告)号：US20190279725A1

公开(公告)日：2019-09-12

申请号：US16423505

申请日：2019-05-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNG-SEOP SHIM ,  JAEHONG KIM

IPC: G11C16/26 ,  G11C16/34 ,  G06F11/10

Abstract: A storage device includes a nonvolatile memory device and a controller. A nonvolatile memory device includes a plurality of memory blocks. Each of the plurality of memory blocks is divided into a plurality of zones and is formed on a substrate. Each of the plurality of zones comprises one or more word lines. A controller performs a reliability verification read operation on a first zone of the plurality of zones of a memory block selected from the plurality of memory blocks if a number of read operations performed on the first zone reaches a first threshold value and performs the reliability verification read operation on a second zone of the plurality of zones of the selected memory block if a number of read operations performed on the second zone reaches a second threshold value.

公开(公告)号：US20230141749A1

公开(公告)日：2023-05-11

申请号：US17867086

申请日：2022-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wenwen HAO ,  YONGWONG KWON ,  Na LIU ,  Yin LUO ,  CHANKYU KOH ,  Lining DOU ,  Lu WANG ,  YOUNG-SEOP SHIM

IPC: G06F11/00 ,  G06N3/08

CPC classification number: G06F11/004 ,  G06N3/08

Abstract: A failure prediction method and device for a storage device are provided. The method comprises: inputting SMART data of the storage device obtained in real time into each of a plurality of base classification models to obtain a classification result for the SMART data of the storage device obtained in real time that is output by the each classification model, wherein the each base classification model is obtained by training using historical SMART data of a plurality of storage devices and/or SMART data of the plurality of storage devices obtained online; determining whether the SMART data of the storage device obtained in real time is healthy data or erroneous data, based on classification results of the plurality of base classification models; predicting whether the storage device will fail, based on a number of SMART data that is determined as healthy data and a number of SMART data that is determined as erroneous data among SMART data of the storage device obtained within a predetermined time window.

公开(公告)号：US20190079816A1

公开(公告)日：2019-03-14

申请号：US15961918

申请日：2018-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KWANGKYU BANG ,  YOUNG-SEOP SHIM ,  HEEYOUB KANG ,  KYUNGDUK LEE

IPC: G06F11/00 ,  G06F3/06 ,  G06F11/07

CPC classification number: G06F11/006 ,  G06F3/0653 ,  G06F11/073 ,  G06F11/0772 ,  G06F11/0787

Abstract: An operating method of a memory controller to control a nonvolatile memory device includes receiving information about operation failure from the nonvolatile memory device, receiving lock-out status information from the nonvolatile memory device, determining whether a lock-out signal is output based on the lock-out status information, and determining a failure block corresponding to the information about the operation failure as a normal block or a bad block depending on the determination result.

公开(公告)号：US20180358098A1

公开(公告)日：2018-12-13

申请号：US15844197

申请日：2017-12-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-SOO CHA ,  YOUNG-SEOP SHIM

IPC: G11C16/16 ,  G11C16/34 ,  G11C16/08 ,  G11C7/20 ,  G11C5/14 ,  G06F12/02

Abstract: An operating method of a storage device, which includes a nonvolatile memory device, includes entering a power-on mode, searching for an open memory block, which includes at least one erase word line, from among memory blocks included in the nonvolatile memory device, applying a program voltage to the at least one erase word line to close the open memory block if the number of the erase word lines included in the open memory block is not more than a preset value, and after the power-on mode, entering a normal operation mode. Memory cells connected to the at least one erase word line to which the program voltage is applied are programmed to have a threshold voltage distribution range higher than a threshold voltage distribution range of an erase state.

公开(公告)号：US20210109856A1

公开(公告)日：2021-04-15

申请号：US16930429

申请日：2020-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUNGDUK LEE ,  YOUNG-SEOP SHIM

IPC: G06F12/02 ,  G06F12/0882 ,  G06F12/0873 ,  G06F11/30

Abstract: A memory management method of a storage device including: programming write-requested data in a memory block; counting an elapse time from a time when a last page of the memory block was programmed with the write-requested data; triggering a garbage collection of the storage device when the elapse time exceeds a threshold value; and programming valid data collected by the garbage collection at a first clean page of the memory block.

公开(公告)号：US20180342305A1

公开(公告)日：2018-11-29

申请号：US15926419

申请日：2018-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-SOO CHA ,  YOUNG-SEOP SHIM ,  DAE-WON KIM

IPC: G11C16/34 ,  G11C16/26 ,  G06F13/16 ,  G06F13/40

CPC classification number: G11C16/3404 ,  G06F13/1673 ,  G06F13/4068 ,  G11C11/5642 ,  G11C13/0033 ,  G11C13/0035 ,  G11C13/004 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3436 ,  G11C16/3495 ,  G11C2013/0057

Abstract: A method of operating a storage device includes: performing a background read operation on a nonvolatile memory by using a default read voltage level; performing a read retry operation on the nonvolatile memory by using a corrected read voltage level when the background read operation fails; storing the corrected read voltage level in a history buffer when the read retry operation succeeds; and performing a host read operation on the nonvolatile memory by using the history buffer in response to a read request received from a host.

公开(公告)号：US20180286492A1

公开(公告)日：2018-10-04

申请号：US15837841

申请日：2017-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUNGDUK LEE ,  YOUNG-SEOP SHIM

IPC: G11C29/38 ,  G11C29/44

CPC classification number: G11C29/44 ,  G11C29/38 ,  G11C29/789

Abstract: A storage device includes a nonvolatile memory device that detects loop counts of state pass loops of at least one target state of a plurality of target states, and generates state loop count information (SLCI) indicative of whether a program operation is successful based on the detected loop count of the state pass loops, during a program operation of selected memory cells; and a storage controller that makes a request to the nonvolatile memory device for the state loop count information in response to detection of an operation condition or an external command, and assigns a memory block in which the selected memory cells are included as a bad block based on the state loop count information from the nonvolatile memory device.

公开(公告)号：US20160371026A1

公开(公告)日：2016-12-22

申请号：US15065920

申请日：2016-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNG-SEOP SHIM ,  JAE-HONG KIM

IPC: G06F3/06 ,  G11C16/34 ,  G11C16/16

CPC classification number: G11C16/3495 ,  G11C7/04 ,  G11C11/5628 ,  G11C11/5635 ,  G11C16/10 ,  G11C16/16 ,  G11C16/3445 ,  G11C16/3459 ,  G11C16/349

Abstract: A method of operating a flash memory device includes detecting the number of program/erase cycles that have been executed by the flash memory device. A setting value related to the number of times a program loop is performed is changed according to the detected number of program/erase cycles. Data is programmed within the flash memory by performing the program loop one or more times, in response to receiving a write command A determination is made whether the programming has passed or failed, based on whether the number of program loops required to program the data within the flash memory is within a boundary identified by the changed setting-value.

Abstract translation: 操作闪速存储器件的方法包括检测由闪存器件执行的编程/擦除周期的数量。 根据检测到的编程/擦除周期数，改变与程序循环执行次数相关的设定值。 通过响应于接收到写入命令执行程序循环一次或多次来将数据编程在闪速存储器内。根据是否需要编程数据所需的程序循环数量，确定编程是否已经通过或失败 闪存位于由改变的设定值所标识的边界内。