公开(公告)号：US20170075628A1

公开(公告)日：2017-03-16

申请号：US15242642

申请日：2016-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SOO-YOUNG JI ,  DONGHUN LEE

IPC: G06F3/06 ,  G06F12/1009

CPC classification number: G06F3/0656 ,  G06F3/0611 ,  G06F3/0659 ,  G06F3/0679 ,  G06F3/0688 ,  G06F12/0246 ,  G06F2212/1024 ,  G06F2212/7201 ,  G06F2212/7203

Abstract: A matching key search method of a server system including a storage device, the storage device including a nonvolatile memory device and a buffer memory. The matching key search method includes receiving a search command for a keyword from a host, reading data from a memory area of the memory device corresponding to an address included in the search command and storing the read data in the buffer memory, determining whether the read data matches the keyword, transmitting a result of the determining to the host without transmitting the read data to the host, and generating a matching key table with reference to the result of the determining and storing the generated matching key table in the buffer memory.

Abstract translation: 一种包括存储装置的服务器系统的匹配关键搜索方法，所述存储装置包括非易失性存储装置和缓冲存储器。 所述匹配关键字搜索方法包括从主机接收关键字的搜索命令，从与所述搜索命令中包含的地址对应的所述存储器件的存储器区域读取数据，并将读取的数据存储在所述缓冲存储器中， 数据匹配关键字，将确定结果发送给主机，而不向主机发送读取的数据，并且参考确定并将生成的匹配关键字表存储在缓冲存储器中的结果来生成匹配关键字表。

公开(公告)号：US20170271479A1

公开(公告)日：2017-09-21

申请号：US15612338

申请日：2017-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JINBUM KIM ,  JAEYOUNG PARK ,  DONGHUN LEE ,  JEONGHO YOO ,  JIEON YOON ,  KWAN HEUM LEE ,  CHOEUN LEE ,  BONYOUNG KOO

IPC: H01L29/66 ,  H01L29/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/40 ,  H01L21/30 ,  H01L29/78 ,  H01L29/08 ,  H01L29/04 ,  H01L29/165

CPC classification number: H01L29/66636 ,  H01L21/3003 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/12 ,  H01L29/165 ,  H01L29/401 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/66545 ,  H01L29/78

Abstract: A method of fabricating a semiconductor device is provided as follows. A source/drain pattern is formed on a substrate. The source/drain pattern contains silicon atoms and germanium atoms. At least one germanium atom is removed from the germanium atoms of the source/drain pattern.

公开(公告)号：US20210327476A1

公开(公告)日：2021-10-21

申请号：US17355765

申请日：2021-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONGHUN LEE ,  Daesik MOON ,  Young-Soo SOHN ,  Young-Hoon SON ,  Ki-Seok OH ,  Changkyo LEE ,  Hyun-Yoon CHO ,  Kyung-Soo HA ,  Seokhun HYUN

IPC: G11C7/10 ,  G06F3/06

Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.