公开(公告)号：US20160351408A1

公开(公告)日：2016-12-01

申请号：US15130515

申请日：2016-04-15

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： BADRO IM ,  YOONCHUL CHO ,  SANGYEOL KANG ,  DAEHYUN KIM ,  DONGKAK LEE ,  JUN-NOH LEE ,  BONGHYUN KIM ,  KONGSOO LEE

IPC分类号： H01L21/308 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01L21/0337 ,  H01L21/02112 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32055 ,  H01L21/32139

摘要： Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process, poly-crystalline silicon spacers are formed on the side surfaces of the carbon-containing patterns after the hydrophilic process has been performed, and the etch target layer is patterned using the poly-crystalline silicon spacers as an etch mask.

摘要翻译： 在蚀刻目标层上形成含碳图案，通过亲水处理处理含碳图案的侧表面，亲水处理已经在含碳图案的侧表面上形成多晶硅间隔物 并且使用多晶硅间隔物作为蚀刻掩模来图案化蚀刻目标层。