公开(公告)号：US20170018553A1

公开(公告)日：2017-01-19

申请号：US15198035

申请日：2016-06-30

申请人： Samsung Electronics Co., Ltd.

发明人： Jun-Noh LEE ,  YOUNGKUK KIM ,  SANGYEOL KANG ,  JOONSOO PARK ,  KiVin IM

IPC分类号： H01L27/108

CPC分类号： H01L27/10855 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10888

摘要： A method for manufacturing a semiconductor device may include forming contact pads spaced apart from each other in a first direction on a substrate and between first insulating patterns; forming first holes between the first insulating patterns and having bottom ends adjacent top surfaces of the contact pads; forming second holes between second insulating patterns and overlapping with partial portions of the first holes in a second direction perpendicular to the first direction; and forming a bottom electrode layer including first portions to cover the bottom ends of the first holes and sidewalls of the second holes. In forming the first and second holes, the first and second holes are formed simultaneously.

摘要翻译： 制造半导体器件的方法可以包括在衬底上沿第一方向和第一绝缘图案之间形成彼此间隔开的接触焊盘; 在所述第一绝缘图案之间形成第一孔并且具有邻近所述接触垫的顶表面的底端; 在第二绝缘图案之间形成第二孔，并在垂直于第一方向的第二方向上与第一孔的部分部分重叠; 以及形成包括第一部分的底部电极层，以覆盖第一孔的底端和第二孔的侧壁。 在形成第一和第二孔时，第一和第二孔同时形成。

公开(公告)号：US20240186368A1

公开(公告)日：2024-06-06

申请号：US18434954

申请日：2024-02-07

申请人： Samsung Electronics Co., Ltd.

发明人： GIHEE CHO ,  JUNGOO KANG ,  SANGYEOL KANG ,  HYUNSUK LEE

IPC分类号： H01G4/30 ,  H10B12/00

CPC分类号： H01L28/60 ,  H10B12/315

摘要： Semiconductor devices including a capacitor and methods of forming the same are provided. The semiconductor devices may include a capacitor that include a lower electrode, an upper electrode on the lower electrode, and a dielectric layer extending between the lower electrode and the upper electrode. The lower electrode may include a doped region that contacts the dielectric layer, and the doped region of the lower electrode is configured to increase a capacitance of the capacitor.

公开(公告)号：US20180315811A1

公开(公告)日：2018-11-01

申请号：US15938234

申请日：2018-03-28

申请人： Samsung Electronics Co., Ltd.

发明人： Kyuho CHO ,  SANGYEOL KANG ,  SUHWAN KIM ,  Sunmin MOON ,  Young-Lim PARK ,  Jong-Bom SEO ,  Joohyun JEON

IPC分类号： H01L49/02

CPC分类号： H01L28/75 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02244 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02356 ,  H01L21/02362 ,  H01L28/91

摘要： A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

公开(公告)号：US20160351408A1

公开(公告)日：2016-12-01

申请号：US15130515

申请日：2016-04-15

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： BADRO IM ,  YOONCHUL CHO ,  SANGYEOL KANG ,  DAEHYUN KIM ,  DONGKAK LEE ,  JUN-NOH LEE ,  BONGHYUN KIM ,  KONGSOO LEE

IPC分类号： H01L21/308 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01L21/0337 ,  H01L21/02112 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32055 ,  H01L21/32139

摘要： Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process, poly-crystalline silicon spacers are formed on the side surfaces of the carbon-containing patterns after the hydrophilic process has been performed, and the etch target layer is patterned using the poly-crystalline silicon spacers as an etch mask.

摘要翻译： 在蚀刻目标层上形成含碳图案，通过亲水处理处理含碳图案的侧表面，亲水处理已经在含碳图案的侧表面上形成多晶硅间隔物 并且使用多晶硅间隔物作为蚀刻掩模来图案化蚀刻目标层。