公开(公告)号：US20160056325A1

公开(公告)日：2016-02-25

申请号：US14676750

申请日：2015-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Sun MAENG ,  Jun Youn KIM ,  Sung Min CHOI ,  Kyung Ho YOO

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/24 ,  H01L33/06 ,  H01L33/14

CPC classification number: H01L33/325 ,  H01L33/06 ,  H01L33/145

Abstract: A semiconductor light emitting device includes: an n-type semiconductor layer and a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the active layer and the p-type semiconductor layer and doped with a p-type dopant element. The electron blocking layer is formed of AlxGa1-xN, where 0

Abstract translation: 半导体发光器件包括：n型半导体层和p型半导体层; 设置在n型半导体层和p型半导体层之间的有源层; 以及设置在有源层和p型半导体层之间并掺杂有p型掺杂元素的电子阻挡层。 电子阻挡层由Al x Ga 1-x N形成，其中0

公开(公告)号：US20130236634A1

公开(公告)日：2013-09-12

申请号：US13789901

申请日：2013-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Min CHOI ,  Dong Ju LEE ,  Heon Ho LEE ,  Jang Mi KIM ,  Ok Hyun KIM

IPC: C23C16/52

CPC classification number: C23C16/52

Abstract: There is provided a chemical vapor deposition apparatus, including: a reaction chamber including a support part having a wafer placed thereon and a gas supply part supplying a process gas to a reactive space formed above the support part to allow a thin film to be grown on a surface of the wafer; a heat exchanger changing a temperature of the process gas, supplied to the reactive space through the gas supply part, to allow the process gas to be maintained at a set temperature: and a controller regulating a flow rate of the process gas, and detecting a temperature difference between a temperature of the process gas and the set temperature to thereby control the heat exchanger to supply the process gas to the reactive space while the process gas is maintained at a reference temperature set according to each stage.

Abstract translation: 提供了一种化学气相沉积设备，包括：反应室，其包括具有放置在其上的晶片的支撑部分，以及将处理气体供应到形成在支撑部分上方的反应空间的气体供应部分，以使薄膜生长在 晶片的表面; 换热器，其通过气体供给部供给至反应空间的工艺气体的温度，使处理气体保持在设定温度;以及控制器，调节处理气体的流量， 处理气体的温度与设定温度之间的温度差，从而控制热交换器以将处理气体供应到反应空间，同时处理气体保持在根据每个阶段设定的参考温度。

公开(公告)号：US20150240358A1

公开(公告)日：2015-08-27

申请号：US14506182

申请日：2014-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Sung KIM ,  Jong Won JANG ,  Sung Min CHOI ,  Sang Heon HAN ,  Suk Ho YOON ,  Jeong Wook LEE

IPC: C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4586 ,  C23C16/45508 ,  C23C16/4584

Abstract: There is provided a susceptor. The susceptor includes: a body having a first surface, a second surface opposite the first surface, and an outer side surface connecting the first surface and the second surface; at least one pocket recessed from the first surface to accommodate at least one wafer therein, respectively; at least one tunnel respectively located below the pocket and extending from a center of the body to the outer side surface; at least one connecting channel each of which connects each of the pocket to each of the tunnel; and a supply line connected to the tunnel at the center of the body and supplying a gas from an outside in order for the gas to flow from the center of the body to the outer side surface.

Abstract translation: 提供了一个感受器。 感受体包括：主体，其具有第一表面，与第一表面相对的第二表面和连接第一表面和第二表面的外侧表面; 分别从所述第一表面凹入以容纳至少一个晶片的至少一个凹坑; 至少一个隧道分别位于所述口袋下方并从所述主体的中心延伸到所述外侧表面; 至少一个连接通道，每个连接通道将每个口袋连接到每个隧道; 以及在主体的中心连接到隧道的供应管线，并且从外部供应气体以使气体从主体的中心流向外侧表面。