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1.发明申请METHOD FOR PATTERNING AMORPHOUS ALLOY, AMORPHOUS ALLOY PATTERN STRUCTURE USING THE SAME, DOME SWITCH, AND METHOD FOR MANUFACTURING DOME SWITCH 审中-公开用于绘制非晶态合金的方法，使用其的非晶合金图案结构，圆顶开关以及用于制造圆顶开关的方法公开(公告)号：US20170004931A1
公开(公告)日：2017-01-05
申请号：US15095609
申请日：2016-04-11
发明人： Eun-soo PARK , Keum-hwan PARK , Ju-ho LEE , Jin-man PARK
摘要： A method for patterning an amorphous alloy is provided. The method includes forming a pattern for defining an amorphous alloy deposition region on a parent material, forming an amorphous alloy deposition layer on the parent material with the pattern formed thereon, and etching a region except for the amorphous alloy deposition region. A dome switch is provided. The dome switch includes a metal layer shaped like a dome, a central portion of which protrudes, and, in response to external force being received through the protruding central portion, the central portion contacting and electrically connected to a circuit board, and an amorphous alloy layer disposed on the metal layer. Accordingly, an amorphous alloy structure with enhanced durability and reliability is easily manufactured.
摘要翻译： 提供了一种用于图案化非晶态合金的方法。 该方法包括在母体材料上形成用于限定非晶合金沉积区域的图案，在其上形成图案的母体材料上形成非晶合金沉积层，并蚀刻非晶合金沉积区域以外的区域。 提供一个圆顶开关。 圆顶开关包括形成为圆顶的金属层，其中心部分突出，并且响应于通过突出的中心部分接收的外力，接触并电连接到电路板的中心部分和非晶态合金 层设置在金属层上。 因此，容易制造具有增强的耐久性和可靠性的非晶合金结构。
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公开(公告)号：US20170214745A1
公开(公告)日：2017-07-27
申请号：US15401295
申请日：2017-01-09
发明人： Dong-kun SHIN , Eun-soo PARK , Si-hoon CHOI , Gyeong-hwan HONG
CPC分类号： H04L67/125 , H04L12/2823 , H04L43/10
摘要： Disclosed is an electronic device configured to connect with at least one sensor device through a network. The electronic device includes a communicator comprising communication circuitry configured to communicate with the at least one sensor device and a user terminal, a storage configured to store information of data acquiring methods available for the sensor device and information of settings of a current data acquiring method and a processor configured to determine whether data is acquirable based on the stored information of the data acquiring methods in response to a request for acquiring the data from the user terminal with respect to the at least one sensor device, and to control the at least one sensor based on the determination.
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3.发明申请公开(公告)号：US20170034965A1
公开(公告)日：2017-02-02
申请号：US15095713
申请日：2016-04-11
发明人： Jin-man PARK , Keum-hwan PARK , Eun-soo PARK , Ju-ho LEE
CPC分类号： B22D23/003 , B29C43/18 , B29K2079/08 , B29K2705/00 , B29K2995/0011 , C22C45/00 , C22C45/001 , C22C45/008 , C22C45/02 , C22C45/04 , C22C45/08 , C22C45/10 , C23C14/14 , C23C14/205 , C23C14/34 , C23C14/3414 , C23C30/00 , H01J37/3414 , H01J2237/332 , H05K9/0024 , H05K9/0043 , H05K9/0084 , Y10T428/12556 , Y10T428/12569 , Y10T428/12806 , Y10T428/12812 , Y10T428/12951 , Y10T428/2495 , Y10T428/24967 , Y10T428/265
摘要： An electromagnetic wave shielding thin film for shielding from electromagnetic waves generated in an electronic part is provided. The electromagnetic wave shielding thin film includes metal plate which has elastic limit of 1% or more, strength of 1000 MPa or more, and a volume fraction of an amorphous phase of 50% or more.
摘要翻译： 提供了用于屏蔽电子部件中产生的电磁波的电磁波屏蔽薄膜。 电磁波屏蔽薄膜包括弹性极限为1％以上，强度为1000MPa以上，非晶相的体积分率为50％以上的金属板。
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4.发明申请TRANSPARENT ELECTRODE USING AMORPHOUS ALLOY AND METHOD OF MANUFACTURING THE SAME 审中-公开使用非晶态合金的透明电极及其制造方法公开(公告)号：US20170048972A1
公开(公告)日：2017-02-16
申请号：US15175510
申请日：2016-06-07
发明人： Eun-soo PARK , Keum-hwan PARK , Ju-ho LEE , Jin-man PARK , Young-soo LEE
CPC分类号： H05K1/0274 , G09F9/301 , H01L31/022466 , H01L51/0021 , H01L51/442 , H05K1/097 , H05K3/06 , H05K2201/0108 , H05K2201/026
摘要： A transparent electrode using an amorphous alloy is provided. The transparent electrode includes a flexible substrate and an amorphous alloy layer configured to have conductivity and to be formed on the flexible substrate so as to have a plurality of voids.
摘要翻译： 提供使用非晶合金的透明电极。 透明电极包括柔性基板和被配置为具有导电性并形成在柔性基板上以具有多个空隙的非晶合金层。
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5.发明申请AMORPHOUS AND NANO NITRIDE COMPOSITE THIN FILM, METHOD FOR FORMING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME 审中-公开非晶和纳米氮化物复合薄膜，其形成方法以及具有其的电子器件公开(公告)号：US20160215383A1
公开(公告)日：2016-07-28
申请号：US15007505
申请日：2016-01-27
发明人： Eun-soo PARK , Keum-hwan PARK , Jin-man PARK , Seok-moo HONG , Sung-ho CHO , Moung-kwan PARK , Jae-won SIM
CPC分类号： C23C14/0641 , C23C14/0688 , C23C14/3414
摘要： An amorphous and nano nitride composite thin film, a method for forming the same, and an electronic device having the same are provided. The amorphous and nano nitride composite thin film has a composite structure in which a nitride phase that includes Zr and Al as nitride constituent elements and at least one metal phase are mixed, wherein the metal phase includes at least one element selected from the group including Cu and Ni, the nitride phase includes a ZrN crystalline phase in which a size of a grain is in the range of 10 nm to 500 nm, and a volume fraction of the ZrN crystalline phase is 10% or more.
摘要翻译： 提供了非晶和纳米氮化物复合薄膜，其形成方法和具有该非晶和纳米氮化物复合薄膜的电子器件。 无定形纳米氮化物复合薄膜具有复合结构，其中混合了包含Zr和Al作为氮化物构成元素和至少一个金属相的氮化物相，其中金属相包括选自包括Cu的至少一种元素 和Ni，氮化物相包括其中晶粒尺寸在10nm至500nm范围内且ZrN结晶相的体积分数为10％以上的ZrN结晶相。
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