公开(公告)号：US20180190699A1

公开(公告)日：2018-07-05

申请号：US15704690

申请日：2017-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： TAE YON LEE ,  GWI DEOK LEE ,  MASARU ISHll ,  YOUNG GU JIN

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/361 ,  H04N5/3745

CPC classification number: H01L27/14614 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14638 ,  H01L27/14667 ,  H01L27/14689 ,  H01L27/14812 ,  H04N5/361 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/378 ,  H04N5/379

Abstract: An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V.