公开(公告)号：US20240070067A1

公开(公告)日：2024-02-29

申请号：US18238283

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghyun CHOI ,  Keunsan PARK ,  Joon-Whan BAE ,  Jooyoung HWANG ,  Gyeongmin KIM ,  Heetak SHIN ,  Junyeong HAN

IPC: G06F12/02

CPC classification number: G06F12/0292 ,  G06F12/023 ,  G06F2212/1016

Abstract: A storage device, including: a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller is further configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, select two or more erase units from among a plurality of erase units included in the plurality of memory cells to be allocated to each zone of the plurality of zones, fixedly and sequentially manage logical addresses of data to be written in the plurality of zones, and generate at least two map tables for the each zone

公开(公告)号：US20240069750A1

公开(公告)日：2024-02-29

申请号：US18240169

申请日：2023-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kui-Yon MUN ,  Junyeong HAN ,  Jooyoung HWANG ,  Gyeongmin KIM ,  Keunsan PARK ,  Joon-Whan BAE ,  Heetak SHIN ,  Seunghyun CHOI

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0631 ,  G06F3/0652 ,  G06F3/0679

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller is further configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device in response to a request of an external host device, select two or more erase units among a plurality of erase units of the plurality of memory cells to be allocated to each of the plurality of zones based on a zone map table, fixedly and sequentially manage logical addresses of data written in the plurality of zones, wherein the controller includes an internal buffer configured to store first data to be written in a first zone from among the plurality of zones, and wherein the controller is further configured to perform a backup operation for the first data by selecting an erase unit in which the first data are to be written, and a cell type of the erase unit based on a feature of the first zone.

公开(公告)号：US20240070066A1

公开(公告)日：2024-02-29

申请号：US18238262

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghyun CHOI ,  Keunsan PARK ,  Heetak SHIN ,  Junyeong HAN ,  Gyeongmin KIM ,  Joon-Whan BAE ,  Jooyoung HWANG

IPC: G06F12/02 ,  G06F11/10

CPC classification number: G06F12/0292 ,  G06F11/1068 ,  G06F2212/1016

Abstract: A storage device, including a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, fixedly and sequentially manage logical addresses of data written in the plurality of zones, generate a first page map table corresponding to a first zone based on performing the write operation on the first zone, the first page map table comprising a logical address and a physical address of the first zone, based on the first zone being full, activate a read service, which is based on the zone map table, and based on the read service being activated, process read requests for the first zone from the external host device using the zone map table.

公开(公告)号：US20240070033A1

公开(公告)日：2024-02-29

申请号：US18238301

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junyeong HAN ,  Kui-Yon Mun ,  Jooyoung Hwang ,  Keunsan Park ,  Gyeongmin Kim ,  Heetak Shin ,  Seunghyun Choi

IPC: G06F11/14 ,  G06F3/06

CPC classification number: G06F11/1451 ,  G06F3/0619 ,  G06F3/0647 ,  G06F3/0652 ,  G06F3/0656 ,  G06F3/0679

Abstract: A storage device, including a nonvolatile memory device including a plurality of memory cells forming a user area and a reserved area; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller includes an internal buffer, wherein the controller is configured to: perform a backup operation by writing first data stored in the internal buffer in a backup erase unit included in the reserved area, and after performing the backup operation adjust a buffering unit of the internal buffer to correspond to a cell type of the backup erase unit.

公开(公告)号：US20240069782A1

公开(公告)日：2024-02-29

申请号：US18237806

申请日：2023-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Whan BAE ,  Junyeong HAN ,  Kui-Yon MUN ,  Heetak SHIN

IPC: G06F3/06

CPC classification number: G06F3/0652 ,  G06F3/0604 ,  G06F3/0631 ,  G06F3/0647 ,  G06F3/0679

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to, based on receiving an open zone command from an external host device: based on a number of free erase units from among a plurality of erase units included in the plurality of memory cells being greater than a threshold value, allocate at least two free erase units to a first-type zone, and based on the number of the free erase units being smaller than or equal to the threshold value, allocate the at least two free erase units to a second-type zone. wherein the controller is further configured to permit a random write based on a random logical address received from the external host device for the first-type zone, and to permit a zone write based on a sequential logical address received from the external host device for the second-type zone.