公开(公告)号：US20220189575A1

公开(公告)日：2022-06-16

申请号：US17376932

申请日：2021-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGDEOK SEO ,  WOOHYUN KANG ,  JINYOUNG KIM ,  KANGHO ROH ,  SEHWAN PARK ,  ILHAN PARK ,  HEETAI OH ,  HEEWON LEE ,  SILWAN CHANG ,  SANGHYUN CHOI

IPC: G11C29/42 ,  G11C29/44 ,  G11C29/12 ,  G11C7/10 ,  G06N20/00

Abstract: A memory device may determine cell count information from a threshold voltage distribution of memory cells and may determine a detection case based on cell count information when correction of an error in read data, received from the memory device performing a read operation, fails. The memory controller may control the memory device to perform a read operation using a development time determined in consideration of an offset voltage of a read voltage corresponding to the detection case. When correction of the error in the read data fails again, the memory controller may control the memory device to perform a read operation using a corrected read voltage generated using a dynamic offset voltage obtained by inputting the cell count information to a machine learning model.