-
1.发明申请公开(公告)号：US20210358542A1
公开(公告)日：2021-11-18
申请号：US17391209
申请日：2021-08-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： YUNJUNG LEE , CHANHA KIM , KANGHO ROH , HEEWON LEE
Abstract: A nonvolatile memory device including: a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits; and a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.
-
2.发明申请METHOD FOR OPERATING STORAGE DEVICE DETERMINING WORDLINES FOR WRITING USER DATA DEPENDING ON REUSE PERIOD 审中-公开操作存储设备的方法，用于根据重用期来确定写入用户数据的WORDLINES公开(公告)号：US20170060447A1
公开(公告)日：2017-03-02
申请号：US15245164
申请日：2016-08-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： SANGKWON MOON , HEEWON LEE , SEONGJUN AHN
IPC: G06F3/06
CPC classification number: G11C16/04 , G06F3/0616 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/00
Abstract: Embodiments include a method of operating a storage device including a flash memory, comprising: calculating a reuse period of a selected memory block in the flash memory; determining a set of wordlines of the selected memory block for writing data based on the reuse period of the selected memory block; and writing the data into the set of wordlines.
Abstract translation: 实施例包括操作包括闪速存储器的存储设备的方法，包括：计算闪速存储器中所选存储块的重用周期; 基于所选择的存储块的重用周期，确定用于写入数据的所选存储块的一组字线; 并将数据写入一组字线。
-
3.发明申请公开(公告)号：US20210109660A1
公开(公告)日：2021-04-15
申请号：US16999201
申请日：2020-08-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： YEONJI KIM , YOUNGDEOK SEO , CHANHA KIM , KANGHO ROH , HYUNKYO OH , HEEWON LEE
IPC: G06F3/06
Abstract: An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.
-
公开(公告)号：US20240152289A1
公开(公告)日：2024-05-09
申请号：US18196788
申请日：2023-05-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： SANGJIN YOO , KWANGWOO LEE , HEEWON LEE , Byungchan Park , HYOJIN AHN , DONGCHEUL JANG
IPC: G06F3/06
CPC classification number: G06F3/064 , G06F3/0623 , G06F3/0656 , G06F3/0673
Abstract: There is provided a storage device, which includes: a memory device that includes a plurality of memory blocks, and stores first meta data including first status data and a first parameter in a first memory block among the plurality of memory blocks; and a memory controller that stores second meta data including second status data and second parameters, determines final meta data among a plurality of pieces of meta data including the first meta data and the second status data by comparing a plurality of pieces of status data with the first status data and the second status data, performs parameter confirmation for storing the final meta data in the meta block, and controls the memory device based on a parameter stored in the meta block.
-
公开(公告)号：US20220189575A1
公开(公告)日：2022-06-16
申请号：US17376932
申请日：2021-07-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： YOUNGDEOK SEO , WOOHYUN KANG , JINYOUNG KIM , KANGHO ROH , SEHWAN PARK , ILHAN PARK , HEETAI OH , HEEWON LEE , SILWAN CHANG , SANGHYUN CHOI
Abstract: A memory device may determine cell count information from a threshold voltage distribution of memory cells and may determine a detection case based on cell count information when correction of an error in read data, received from the memory device performing a read operation, fails. The memory controller may control the memory device to perform a read operation using a development time determined in consideration of an offset voltage of a read voltage corresponding to the detection case. When correction of the error in the read data fails again, the memory controller may control the memory device to perform a read operation using a corrected read voltage generated using a dynamic offset voltage obtained by inputting the cell count information to a machine learning model.
-
Patent Agency Ranking
公开(公告)号：US20200110547A1
公开(公告)日：2020-04-09
申请号：US16416750
申请日：2019-05-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： KWANGWOO LEE , CHANHA KIM , YUNJUNG LEE , JISOO KIM , SEUNGKYUNG RO , JINWOOK LEE , HEEWON LEE
Abstract: A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.
-
公开(公告)号：US20240046993A1
公开(公告)日：2024-02-08
申请号：US18170893
申请日：2023-02-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： WOOHYUN KANG , JIN-YOUNG KIM , HYUNA KIM , SE HWAN PARK , YOUNGDEOK SEO , HYUNKYO OH , HEEWON LEE , DONGHOO LIM
CPC classification number: G11C16/12 , G11C16/26 , G06F11/1044
Abstract: A method of operating a non-volatile memory device, which is configured to communicate with a storage controller includes: receiving a first request indicating a read reclaim determination and including environment information from the storage controller, performing a first on-chip read operation for generating first distribution information based on the first request, determining whether a read reclaim is required based on the first distribution information, and providing the storage controller with a determination result having a first bit value in response to determining that the read reclaim is required.
-
公开(公告)号：US20180108422A1
公开(公告)日：2018-04-19
申请号：US15615849
申请日：2017-06-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： HYUNKYO OH , SEUNGKYUNG RO , HEEWON LEE , SEONGNAM KWON , OAK-HA KIM , DONGGI LEE
Abstract: A memory system includes multiple storage devices that each include a nonvolatile memory device. A client device is configured to collect deterioration information of the nonvolatile memory devices provided from the storage devices. A server device is configured to receive the collected deterioration information and to predict a degree of deterioration of the nonvolatile memory devices in real time by performing machine learning based on the collected deterioration information and initial deterioration information. The client device determines a read level of the nonvolatile memory device based on the degree of deterioration of the nonvolatile memory devices from the server device. The storage device sets the nonvolatile memory device to operate based on the read level determined in the client device.
-
公开(公告)号：US20160172046A1
公开(公告)日：2016-06-16
申请号：US14968495
申请日：2015-12-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： SANGKWON MOON , SEONGJUN AHN , HEEWON LEE
Abstract: A storage device includes a nonvolatile memory having a plurality of memory cells and a memory controller to control the nonvolatile memory. The operating method of the storage device includes reading previously programmed memory cells among the memory cells of the nonvolatile memory and determining a time after erase of the previously programmed memory cells, programming selected memory cells of the nonvolatile memory, and programming meta data including a time after erase of the selected memory cells, based on the determined time after erase of the previously programmed memory cells.
Abstract translation: 存储装置包括具有多个存储单元的非易失性存储器和用于控制非易失性存储器的存储器控制器。 存储装置的操作方法包括读取非易失性存储器的存储器单元中的先前编程的存储器单元，并且确定先前编程的存储器单元的擦除之后的时间，编程非易失性存储器的选定的存储单元，以及编程包括时间的元数据 在擦除所选择的存储器单元之后，基于擦除先前编程的存储器单元之后的确定时间。
-
10.发明申请NON-VOLATILE MEMORY DEVICES, METHODS OF OPERATING NON-VOLATILE MEMORY DEVICES, AND SYSTEMS INCLUDING THE SAME 审中-公开非易失性存储器件，非易失性存储器件的操作方法和包括其的系统公开(公告)号：US20150193163A1
公开(公告)日：2015-07-09
申请号：US14660897
申请日：2015-03-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： KUI-YON MUN , HEEWON LEE
CPC classification number: G06F3/0619 , G06F3/0659 , G06F3/0688 , G11C16/10 , G11C16/30 , G11C16/3418 , G11C16/349 , G11C29/52
Abstract: Random sequence data is sequentially generated based on a seed assigned to a selected memory space, and one of access-requested segments of the selected memory space is logically combined with the sequentially generated random sequence data to transfer the access-requested segment. The sequentially generating and the logically combining are iteratively performed until remaining access-requested segments all transferred.
Abstract translation: 随机序列数据基于分配给所选择的存储器空间的种子顺序生成，并且所选择的存储器空间的访问请求片段中的一个与顺序生成的随机序列数据逻辑组合以传送访问请求片段。 迭代执行顺序生成和逻辑组合，直到所有传送的剩余访问请求片段为止。
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.016 seconds)
