公开(公告)号：US20220130437A1

公开(公告)日：2022-04-28

申请号：US17239647

申请日：2021-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEHWAN PARK ,  JINYOUNG KIM ,  YOUNGDEOK SEO ,  ILHAN PARK

IPC: G11C7/10 ,  G11C7/14 ,  G11C7/18 ,  G11C8/08

Abstract: A storage device includes at least one non-volatile memory device and a controller configured to control the at least one non-volatile memory device. The at least one non-volatile memory device performs an on-chip valley search (OVS) operation by latching a read command at an edge of a write enable (WE) signal according to a command latch enable (CLE) signal and an address latch enable (ALE) signal. The controller receives detection information according to the OVS operation from the at least one non-volatile memory device in response to a specific command. The OVS operation includes a first OVS operation using a read level and a second OVS operation using a changed read level.

公开(公告)号：US20220189575A1

公开(公告)日：2022-06-16

申请号：US17376932

申请日：2021-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGDEOK SEO ,  WOOHYUN KANG ,  JINYOUNG KIM ,  KANGHO ROH ,  SEHWAN PARK ,  ILHAN PARK ,  HEETAI OH ,  HEEWON LEE ,  SILWAN CHANG ,  SANGHYUN CHOI

IPC: G11C29/42 ,  G11C29/44 ,  G11C29/12 ,  G11C7/10 ,  G06N20/00

Abstract: A memory device may determine cell count information from a threshold voltage distribution of memory cells and may determine a detection case based on cell count information when correction of an error in read data, received from the memory device performing a read operation, fails. The memory controller may control the memory device to perform a read operation using a development time determined in consideration of an offset voltage of a read voltage corresponding to the detection case. When correction of the error in the read data fails again, the memory controller may control the memory device to perform a read operation using a corrected read voltage generated using a dynamic offset voltage obtained by inputting the cell count information to a machine learning model.

公开(公告)号：US20220139483A1

公开(公告)日：2022-05-05

申请号：US17336378

申请日：2021-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUNHYANG PARK ,  JINYOUNG KIM ,  JISANG LEE ,  SEHWAN PARK ,  ILHAN PARK

IPC: G11C29/42 ,  G11C29/44 ,  G11C16/26 ,  G11C16/04 ,  G11C16/34

Abstract: A reading method for a non-volatile memory device, includes performing a normal read operation using a default read level in response to a first read command; and performing a read operation using a multiple on-chip valley search (OVS) sensing operation in response to a second read command, when read data read in the normal read operation are uncorrectable.