公开(公告)号：US11499098B2

公开(公告)日：2022-11-15

申请号：US17007179

申请日：2020-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Kun Su Park ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang ,  Yong Seok Han ,  Heejae Chung

IPC: C09K11/88 ,  H01L51/50 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

公开(公告)号：US11981850B2

公开(公告)日：2024-05-14

申请号：US17991903

申请日：2022-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang ,  Heejae Chung ,  Oul Cho

IPC: C09K11/88 ,  C09K11/08 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C09K11/0883 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).

公开(公告)号：US09902900B2

公开(公告)日：2018-02-27

申请号：US14538556

申请日：2014-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY

Inventor： Kyungsang Cho ,  Dongho Kim ,  Heejae Chung

IPC: H01B1/10 ,  C09K11/02 ,  B82Y30/00 ,  C09K11/56 ,  C09K11/88 ,  B82Y40/00

CPC classification number: C09K11/02 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/565 ,  C09K11/883 ,  Y10S977/774 ,  Y10S977/897 ,  Y10S977/932

Abstract: Provided is a nanoparticle polymer in which a plurality of core particles that are linked to each other by a linker are surrounded by a metal-chalcogenide compound shell. The nanoparticle polymer may include a nanoparticle polymer including a core assembly including at least two nanoparticles connected to each other by a linker; and a shell that surrounds a surface of the core assembly and includes a metal-chalcogenide compound.

公开(公告)号：US11981851B2

公开(公告)日：2024-05-14

申请号：US18054687

申请日：2022-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Kun Su Park ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang ,  Yong Seok Han ,  Heejae Chung

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/115

CPC classification number: C09K11/883 ,  H10K50/115 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2002/01 ,  C01P2002/74 ,  C01P2004/30 ,  C01P2004/64 ,  C01P2004/80

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

公开(公告)号：US11512254B2

公开(公告)日：2022-11-29

申请号：US17036122

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang ,  Heejae Chung ,  Oul Cho

IPC: H01L21/08 ,  C09K11/88 ,  C09K11/08 ,  H01L51/50 ,  B82Y40/00 ,  B82Y20/00

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).