公开(公告)号：US20130292650A1

公开(公告)日：2013-11-07

申请号：US13670001

申请日：2012-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Young JUNG ,  Joo-Young KIM ,  Hyeok KIM

IPC: H01L51/10 ,  H01L51/40

CPC classification number: H01L51/0004 ,  H01L51/0005 ,  H01L51/0533 ,  H01L51/102

Abstract: According to example embodiments, a method of manufacturing an organic thin film transistor includes sequentially forming a gate electrode, a gate insulator, a source electrode, and a drain electrode on a substrate, forming a first self-assembled monolayer on the source electrode and the drain electrode from a first self-assembled monolayer precursor, forming a second self-assembled monolayer on the gate insulator from a second self-assembled monolayer precursor that is different from the first self-assembled monolayer precursor, and forming an organic semiconductor on the first self-assembled monolayer and the second self-assembled monolayer. The first self-assembled monolayer and the second self-assembled monolayer may be formed simultaneously or sequentially in a single container. An organic thin film transistor may be manufactured according to the method. A display device may include the organic thin film transistor.

Abstract translation: 根据示例性实施例，制造有机薄膜晶体管的方法包括在基板上依次形成栅电极，栅极绝缘体，源电极和漏电极，在源极上形成第一自组装单层， 漏电极从第一自组装单层前体形成，在第二自组装单层前体上形成第二自组装单层，该第二自组装单层前体与第一自组装单层前体不同，并在第一自组装单层前体上形成有机半导体 自组装单层和第二自组装单层。 第一自组装单层和第二自组装单层可以在单个容器中同时或顺序形成。 可以根据该方法制造有机薄膜晶体管。 显示装置可以包括有机薄膜晶体管。

公开(公告)号：US20240128097A1

公开(公告)日：2024-04-18

申请号：US18200068

申请日：2023-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeok KIM ,  Cheolan KWON ,  Jongkeun MOK ,  Sangho SHIN ,  Sodam JUNG ,  Kiwook HAN

IPC: H01L21/67

CPC classification number: H01L21/67132

Abstract: A chip ejector may include an ejector body and a pushing mechanism, the ejector body may include first vacuum holes, an opening and at least one second vacuum hole, the first vacuum holes may fix a film having at least one semiconductor chip using a vacuum, the opening may be formed under the semiconductor chip, the second vacuum hole may be arranged around the opening to provide a portion of the film under an edge portion of a lower surface of the semiconductor chip with the vacuum, the pushing mechanism may be lifted in the ejector body through the opening to lift up the semiconductor chip and the film, thus, a sufficiently strong downward force may be applied to the portion of the film under the edge portion of the lower surface of the semiconductor chip to readily delaminate the semiconductor chip having a thin thickness from the film.