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公开(公告)号：US12198732B2
公开(公告)日：2025-01-14
申请号：US17310460
申请日：2021-07-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Gupil Cheong , Hyunwook Kim , Hangil Moon , Byoungchul Lee , Juyeon Jin , Doosuk Kang , Bokun Choi
IPC: G11B27/10
Abstract: An electronic device according to various embodiments includes a camera; a display; a communication module supporting Bluetooth communication; and a processor configured to: establish a communication link with a plurality of external electronic devices through the communication module; transmit a first signal indicating an occurrence of an event using the camera to at least one of the plurality of external electronic devices through the communication link; receive audio data corresponding to sound acquired by each of the plurality of external electronic devices, from each of the plurality of external electronic devices in predetermined time periods through the communication link in a state in which the plurality of external electronic devices are worn; and synchronize the audio data with video acquired using the camera and store the synchronized data, based on time and an order at which each of the plurality of external electronic devices acquires the sound.
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公开(公告)号：US11659712B2
公开(公告)日：2023-05-23
申请号：US17712225
申请日：2022-04-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taehee Lee , Hyunwook Kim , Eun-jung Yang
IPC: H01L27/11582 , H01L27/1157 , H01L27/11565
CPC classification number: H01L27/11582 , H01L27/1157 , H01L27/11565
Abstract: Disclosed are three-dimensional semiconductor memory devices including an electrode structure including gate electrodes stacked in a first direction, a lower pattern group including lower vertical patterns that are in a lower portion of the electrode structure and are connected to the substrate, and an upper pattern group including upper vertical patterns that are in an upper portion of the electrode structure. The upper vertical patterns may be connected to the lower vertical patterns, respectively. The devices may also include two common source plugs spaced apart from each other in a second direction. The electrode structure may be between the two common source plugs. An upper portion of the lower pattern group has a first width in the second direction, an upper portion of the upper pattern group has a second width in the second direction, and the first width may be greater than the second width.
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公开(公告)号：US11341981B2
公开(公告)日：2022-05-24
申请号：US16793370
申请日：2020-02-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hangil Moon , Hyunwook Kim , Sanghoon Lee , Euibum Han
Abstract: Disclosed is an electronic device including a speaker, a communication circuit, a processor, and a memory. The processor is configured to receive first data including a first audio frame corresponding to a first interval and a second audio frame corresponding to a second interval subsequent to the first interval, using the communication circuit, to store the second audio frame in the memory in response to reception of the first data, to output a first audio signal generated based on the first audio frame, through the speaker, and to store the third audio frame in the memory and output a second audio signal generated based on the second audio frame of the second data through the speaker when second data including the second audio frame and a third audio frame corresponding to a third interval subsequent to the second interval is received using the communication circuit.
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公开(公告)号：US10553610B2
公开(公告)日：2020-02-04
申请号：US16149848
申请日：2018-10-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taehee Lee , Hyunwook Kim , Eun-jung Yang
IPC: H01L27/11582 , H01L27/1157 , H01L27/11565
Abstract: Disclosed are three-dimensional semiconductor memory devices including an electrode structure including gate electrodes stacked in a first direction, a lower pattern group including lower vertical patterns that are in a lower portion of the electrode structure and are connected to the substrate, and an upper pattern group including upper vertical patterns that are in an upper portion of the electrode structure. The upper vertical patterns may be connected to the lower vertical patterns, respectively. The devices may also include two common source plugs spaced apart from each other in a second direction. The electrode structure may be between the two common source plugs. An upper portion of the lower pattern group has a first width in the second direction, an upper portion of the upper pattern group has a second width in the second direction, and the first width may be greater than the second width.
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公开(公告)号：US12047444B2
公开(公告)日：2024-07-23
申请号：US17837229
申请日：2022-06-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunwook Kim , Sanghoon Lee , Hyunchul Yang , Hangil Moon , Kali Charangajula
IPC: H04L65/613 , H04L65/611 , H04L65/80 , H04L67/1095
CPC classification number: H04L67/1095 , H04L65/611 , H04L65/613 , H04L65/80
Abstract: An electronic device and a method are provided for recording audio data acquired from multiple devices. The electronic device includes a microphone, a communication module, a memory, and a processor configured to establish a first communication link with a first external electronic device through the communication module, establish a second communication link with a second external electronic device through the communication module, acquire a microphone input signal by operating the microphone based on receiving a recording request from the first external electronic device, monitor a transmission environment with the communication module or the second external electronic device, determine a bit rate of audio, based on the transmission environment, encode the audio, based on the determined bit rate, and transmit the encoded audio data to the first external electronic device.
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Patent Agency Ranking
公开(公告)号：US12022019B2
公开(公告)日：2024-06-25
申请号：US17250604
申请日：2019-05-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongmo Keum , Jungyeol An , Gangyoul Kim , Hyunwook Kim , Hyungmo Moon , Seungyoon Heo , Jaemo Yang , Yangsu Kim , Vadim Kudryavtsev
Abstract: The present document relates to a method and an electronic device for adjusting an output level of a speaker on the basis of a distance from an external electronic device, and the electronic device may comprise: a speaker; a first communication circuit; a second communication circuit; a processor; and a memory electrically connected to the processor, wherein the memory stores instructions that, when executed, cause the processor to: receive a signal, broadcast by an external electronic device, through the first communication circuit; determine a distance from the external electronic device at least on the basis of the received signal; and adjust, at a designated level, an output level of the speaker for outputting an audio signal received from the external electronic device by using the second communication circuit, at least on the basis of the distance determined to belong to a designated range. In addition, various embodiments are possible.
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公开(公告)号：US11487497B2
公开(公告)日：2022-11-01
申请号：US17148694
申请日：2021-01-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunwook Kim , Sangsoo Park , Hangil Moon , Hyunchul Yang , Sanghoon Lee , Kalicharan Gajula
IPC: G06F3/16
Abstract: An audio output device according to an embodiment may include: a short-range communication module configured to perform short-range wireless communication; a memory configured to buffer audio data received from an external electronic device through the short-range communication module; an audio output unit configured to output the audio data; and a processor. The processor may be configured to: receive operation mode information related to a function being executed in the external electronic device from the external electronic device through the short-range communication module; configure a reference period corresponding to an amount of the audio data buffered in the memory based on the operation mode information; and determine a playback speed of the audio data to be output through the audio output unit by comparing the amount of the buffered audio data with the configured reference period. In addition, various other embodiments may be possible.
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公开(公告)号：US11923981B2
公开(公告)日：2024-03-05
申请号：US17497308
申请日：2021-10-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyunwook Kim , Sanghoon Lee , Hyunchul Yang , Hangil Moon , Kali Charan Gajula
Abstract: According to various embodiments, an electronic device may include: a transceiver; and at least one processor, wherein the at least one processor is configured to: control the electronic device to establish a wireless communication connection between the electronic device and an external electronic device, generate, by encoding a first frame included in an audio stream, multiple pieces of compressed data corresponding to the first frame, transmit a first packet, including main compressed data corresponding to the first frame from among the multiple pieces of compressed data, to the external electronic device via the transceiver based on the wireless communication connection, and based on a first signal being received from the external electronic device via the transceiver based on the wireless communication connection within a specified time after transmission of the first packet, transmit a second packet, including first sub-compressed data corresponding to the first frame from among the multiple pieces of compressed data, to the external electronic device via the transceiver based on the wireless communication connection.
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公开(公告)号：US11302709B2
公开(公告)日：2022-04-12
申请号：US16732518
申请日：2020-01-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taehee Lee , Hyunwook Kim , Eun-Jung Yang
IPC: H01L27/11582 , H01L27/1157 , H01L27/11565
Abstract: Disclosed are three-dimensional semiconductor memory devices including an electrode structure including gate electrodes stacked in a first direction, a lower pattern group including lower vertical patterns that are in a lower portion of the electrode structure and are connected to the substrate, and an upper pattern group including upper vertical patterns that are in an upper portion of the electrode structure. The upper vertical patterns may be connected to the lower vertical patterns, respectively. The devices may also include two common source plugs spaced apart from each other in a second direction. The electrode structure may be between the two common source plugs. An upper portion of the lower pattern group has a first width in the second direction, an upper portion of the upper pattern group has a second width in the second direction, and the first width may be greater than the second width.
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公开(公告)号：US20190304993A1
公开(公告)日：2019-10-03
申请号：US16149848
申请日：2018-10-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taehee LEE , Hyunwook Kim , Eun-jung Yang
IPC: H01L27/11582 , H01L27/11565 , H01L27/1157
Abstract: Disclosed are three-dimensional semiconductor memory devices including an electrode structure including gate electrodes stacked in a first direction, a lower pattern group including lower vertical patterns that are in a lower portion of the electrode structure and are connected to the substrate, and an upper pattern group including upper vertical patterns that are in an upper portion of the electrode structure. The upper vertical patterns may be connected to the lower vertical patterns, respectively. The devices may also include two common source plugs spaced apart from each other in a second direction. The electrode structure may be between the two common source plugs. An upper portion of the lower pattern group has a first width in the second direction, an upper portion of the upper pattern group has a second width in the second direction, and the first width may be greater than the second width.
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