公开(公告)号：US20240120213A1

公开(公告)日：2024-04-11

申请号：US18240008

申请日：2023-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Rim LEE ,  Myoung Jae SEO ,  Sung Gil KANG ,  Hyun Ho DOH ,  Sung Yong PARK ,  In Hye JEONG

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/285 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/28562 ,  H01L21/3065 ,  H01J2237/334

Abstract: A method of fabricating a semiconductor device is provided. The method includes: loading a substrate into a substrate processing apparatus; and processing the substrate, using the substrate processing apparatus. The processing the substrate includes: providing a process gas; generating a process etchant from the process gas, using plasma ignition, the process etchant including a first etchant and a second etchant; processing the substrate, using the process etchant; identifying a composition rate of the process etchant; and controlling the processing of the substrate based on a process result according to the composition rate of the process etchant.