公开(公告)号：US20180109184A1

公开(公告)日：2018-04-19

申请号：US15584486

申请日：2017-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEONG-KWAN LEE ,  SUNG-CHUL CHUN ,  SUNG-YEOL KIM ,  JAE-HONG KIM

IPC: H02M3/156 ,  H02M3/02 ,  G01R1/30

CPC classification number: H02M3/156 ,  G01R1/30 ,  G01R31/40 ,  H02M3/02 ,  H02M2001/0045 ,  H02M2001/0067 ,  H02M2001/008

Abstract: A power supply apparatus includes first through M-th switching regulators, first through N-th multiplexers, and first through N-th linear regulators, where each of M and N is a natural number greater than or equal to two. The first through M-th switching regulators generate first through M-th reference power signals using an input power signal. The first through N-th multiplexers select one of the first through M-th reference power signals, in response to a power selection signal, to provide first through N-th selection power signals. The first through N-th linear regulators generate first through N-th output power signals using the first through N-th selection power signals. The first through N-th linear regulators are connected to the first through N-th multiplexers, respectively.

公开(公告)号：US20160371026A1

公开(公告)日：2016-12-22

申请号：US15065920

申请日：2016-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNG-SEOP SHIM ,  JAE-HONG KIM

IPC: G06F3/06 ,  G11C16/34 ,  G11C16/16

CPC classification number: G11C16/3495 ,  G11C7/04 ,  G11C11/5628 ,  G11C11/5635 ,  G11C16/10 ,  G11C16/16 ,  G11C16/3445 ,  G11C16/3459 ,  G11C16/349

Abstract: A method of operating a flash memory device includes detecting the number of program/erase cycles that have been executed by the flash memory device. A setting value related to the number of times a program loop is performed is changed according to the detected number of program/erase cycles. Data is programmed within the flash memory by performing the program loop one or more times, in response to receiving a write command A determination is made whether the programming has passed or failed, based on whether the number of program loops required to program the data within the flash memory is within a boundary identified by the changed setting-value.

Abstract translation: 操作闪速存储器件的方法包括检测由闪存器件执行的编程/擦除周期的数量。 根据检测到的编程/擦除周期数，改变与程序循环执行次数相关的设定值。 通过响应于接收到写入命令执行程序循环一次或多次来将数据编程在闪速存储器内。根据是否需要编程数据所需的程序循环数量，确定编程是否已经通过或失败 闪存位于由改变的设定值所标识的边界内。