公开(公告)号：US20210358542A1

公开(公告)日：2021-11-18

申请号：US17391209

申请日：2021-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YUNJUNG LEE ,  CHANHA KIM ,  KANGHO ROH ,  HEEWON LEE

IPC: G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

Abstract: A nonvolatile memory device including: a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits; and a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.

公开(公告)号：US20200110547A1

公开(公告)日：2020-04-09

申请号：US16416750

申请日：2019-05-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KWANGWOO LEE ,  CHANHA KIM ,  YUNJUNG LEE ,  JISOO KIM ,  SEUNGKYUNG RO ,  JINWOOK LEE ,  HEEWON LEE

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/26 ,  G06F11/10 ,  G11C29/52 ,  G06N20/00

Abstract: A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.

公开(公告)号：US20230144368A1

公开(公告)日：2023-05-11

申请号：US17973071

申请日：2022-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GYEONGMIN NAM ,  CHANHA KIM ,  SEUNGRYONG JANG

IPC: G06F3/06

CPC classification number: G06F3/0613 ,  G06F3/0679 ,  G06F3/0659

Abstract: A storage device includes a nonvolatile memory and a controller. The controller is configured to insert, into a hot list, a portion of a logical address received from a host and manage a hot hash table storing a position, at which the logical address is inserted into the hot list. The controller is further configured to search the hot hash table for the position, at which the logical address is inserted into the hot list, by using the logical address, determine an attribute of data corresponding to the logical address based on the search result, and store attribute information indicating the attribute of the data.

公开(公告)号：US20210109660A1

公开(公告)日：2021-04-15

申请号：US16999201

申请日：2020-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YEONJI KIM ,  YOUNGDEOK SEO ,  CHANHA KIM ,  KANGHO ROH ,  HYUNKYO OH ,  HEEWON LEE

IPC: G06F3/06

Abstract: An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.