公开(公告)号：US09705040B2

公开(公告)日：2017-07-11

申请号：US14939817

申请日：2015-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-hoon Ha ,  Sang-yeob Song ,  Gi-bum Kim ,  Jae-in Sim ,  Seung-woo Choi

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/42

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016

Abstract: A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.

公开(公告)号：US10340420B2

公开(公告)日：2019-07-02

申请号：US15876435

申请日：2018-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-heon Yoon ,  Jae-in Sim ,  Gi-bum Kim ,  Ha-yeong Son ,  Young-sub Shin

IPC: H01L33/24 ,  H01L33/00 ,  H01L33/08 ,  H01L33/60 ,  H01L25/07 ,  H01L51/52 ,  H01L21/02 ,  H01L33/40 ,  H01L25/075

Abstract: A semiconductor light-emitting device includes a light-emitting structure, a reflective electrode layer, and a transparent cover layer. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. The reflective electrode layer covers an upper surface of the second semiconductor layer. The transparent cover layer covers an upper surface of the second semiconductor layer on the reflective electrode layer. The transparent cover layer includes a tail portion including a first portion and a second portion. The first portion covers an edge of the reflective electrode layer and a convex upper surface. The second portion is thinner than and extends from the first portion.

公开(公告)号：US20180175247A1

公开(公告)日：2018-06-21

申请号：US15609653

申请日：2017-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-heon YOON ,  Jae-in Sim ,  Gi-bum Kim

IPC: H01L33/40 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/405 ,  H01L33/22 ,  H01L33/44 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016

Abstract: A semiconductor light-emitting device includes a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a reflective electrode layer covering a top surface of the second semiconductor layer; an insulating structure covering a region of the top surface of the second semiconductor layer, the region being around the reflective electrode layer; a first interconnection conductive layer contacting a contact region of the first semiconductor layer through the insulating structure and, together with the insulating structure, constituting an omni-directional reflector (ODR) structure; and a second interconnection conductive layer contacting the reflective electrode layer through the insulating structure.