公开(公告)号：US20210367102A1

公开(公告)日：2021-11-25

申请号：US17117298

申请日：2020-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaiwon Jean ,  Joongseo Kang ,  Namsung Kim ,  Daemyung Chun

IPC: H01L33/12 ,  H01L33/22 ,  H01L27/15

Abstract: A semiconductor light-emitting device includes a buffer structure, a first-type semiconductor layer on the buffer structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. The buffer structure includes a nucleation layer, a first dislocation-removing structure on the nucleation layer, and a buffer layer on the first dislocation-removing structure. The first dislocation-removing structure includes a first material layer on the nucleation layer and a second material layer on the first material layer. The second material layer has a lattice constant different from a lattice constant of the first material layer. A roughness of a top surface of the first material layer is higher than a roughness of a top surface of the nucleation layer and higher than a roughness of a top surface of the second material layer.

公开(公告)号：US11502221B2

公开(公告)日：2022-11-15

申请号：US17117298

申请日：2020-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaiwon Jean ,  Joongseo Kang ,  Namsung Kim ,  Daemyung Chun

IPC: H01L33/12 ,  H01L33/22 ,  H01L27/15 ,  H01L33/32 ,  H01L33/44 ,  H01L33/38

Abstract: A semiconductor light-emitting device includes a buffer structure, a first-type semiconductor layer on the buffer structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. The buffer structure includes a nucleation layer, a first dislocation-removing structure on the nucleation layer, and a buffer layer on the first dislocation-removing structure. The first dislocation-removing structure includes a first material layer on the nucleation layer and a second material layer on the first material layer. The second material layer has a lattice constant different from a lattice constant of the first material layer. A roughness of a top surface of the first material layer is higher than a roughness of a top surface of the nucleation layer and higher than a roughness of a top surface of the second material layer.

公开(公告)号：US11670736B2

公开(公告)日：2023-06-06

申请号：US17964957

申请日：2022-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaiwon Jean ,  Joongseo Kang ,  Namsung Kim ,  Daemyung Chun

IPC: H01L33/22 ,  H01L33/12 ,  H01L27/15 ,  H01L33/32 ,  H01L33/44 ,  H01L33/38

CPC classification number: H01L33/12 ,  H01L27/156 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/44

Abstract: A semiconductor light-emitting device includes a buffer structure, a first-type semiconductor layer on the buffer structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. The buffer structure includes a nucleation layer, a first dislocation-removing structure on the nucleation layer, and a buffer layer on the first dislocation-removing structure. The first dislocation-removing structure includes a first material layer on the nucleation layer and a second material layer on the first material layer. The second material layer has a lattice constant different from a lattice constant of the first material layer. A roughness of a top surface of the first material layer is higher than a roughness of a top surface of the nucleation layer and higher than a roughness of a top surface of the second material layer.