公开(公告)号：US20210367102A1

公开(公告)日：2021-11-25

申请号：US17117298

申请日：2020-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaiwon Jean ,  Joongseo Kang ,  Namsung Kim ,  Daemyung Chun

IPC: H01L33/12 ,  H01L33/22 ,  H01L27/15

Abstract: A semiconductor light-emitting device includes a buffer structure, a first-type semiconductor layer on the buffer structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. The buffer structure includes a nucleation layer, a first dislocation-removing structure on the nucleation layer, and a buffer layer on the first dislocation-removing structure. The first dislocation-removing structure includes a first material layer on the nucleation layer and a second material layer on the first material layer. The second material layer has a lattice constant different from a lattice constant of the first material layer. A roughness of a top surface of the first material layer is higher than a roughness of a top surface of the nucleation layer and higher than a roughness of a top surface of the second material layer.

公开(公告)号：US11646398B2

公开(公告)日：2023-05-09

申请号：US17323042

申请日：2021-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiwon Park ,  Namsung Kim ,  Youngsub Shin ,  Jonghyun Lee ,  Daemyung Chun ,  Byungchul Choi

IPC: H01L33/50 ,  H01L33/46 ,  H01L33/38 ,  H01L27/15 ,  H01L33/00

CPC classification number: H01L33/505 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/382 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041

Abstract: A semiconductor light emitting device including a semiconductor laminate having first and second surfaces, the semiconductor laminate including first and second conductivity-type semiconductor layers, and an active layer between the semiconductor layers; a partition structure on the first surface, the partition structure having a window defining a light emitting region of the first surface of the semiconductor laminate; a wavelength converter in the window, the wavelength converter being configured to convert a wavelength of light emitted from the active layer; and a first electrode and a second electrode on the second surface of the semiconductor laminate and respectively connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the semiconductor laminate includes a plurality of first patterns arranged in the light emitting region of the first surface, and a plurality of second patterns arranged in a covered region of the first surface contacting the partition structure.

公开(公告)号：US11502221B2

公开(公告)日：2022-11-15

申请号：US17117298

申请日：2020-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaiwon Jean ,  Joongseo Kang ,  Namsung Kim ,  Daemyung Chun

IPC: H01L33/12 ,  H01L33/22 ,  H01L27/15 ,  H01L33/32 ,  H01L33/44 ,  H01L33/38

Abstract: A semiconductor light-emitting device includes a buffer structure, a first-type semiconductor layer on the buffer structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. The buffer structure includes a nucleation layer, a first dislocation-removing structure on the nucleation layer, and a buffer layer on the first dislocation-removing structure. The first dislocation-removing structure includes a first material layer on the nucleation layer and a second material layer on the first material layer. The second material layer has a lattice constant different from a lattice constant of the first material layer. A roughness of a top surface of the first material layer is higher than a roughness of a top surface of the nucleation layer and higher than a roughness of a top surface of the second material layer.

公开(公告)号：US11670736B2

公开(公告)日：2023-06-06

申请号：US17964957

申请日：2022-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaiwon Jean ,  Joongseo Kang ,  Namsung Kim ,  Daemyung Chun

IPC: H01L33/22 ,  H01L33/12 ,  H01L27/15 ,  H01L33/32 ,  H01L33/44 ,  H01L33/38

CPC classification number: H01L33/12 ,  H01L27/156 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/44

Abstract: A semiconductor light-emitting device includes a buffer structure, a first-type semiconductor layer on the buffer structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. The buffer structure includes a nucleation layer, a first dislocation-removing structure on the nucleation layer, and a buffer layer on the first dislocation-removing structure. The first dislocation-removing structure includes a first material layer on the nucleation layer and a second material layer on the first material layer. The second material layer has a lattice constant different from a lattice constant of the first material layer. A roughness of a top surface of the first material layer is higher than a roughness of a top surface of the nucleation layer and higher than a roughness of a top surface of the second material layer.