公开(公告)号：US09299826B2

公开(公告)日：2016-03-29

申请号：US14204441

申请日：2014-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hauk Han ,  Il-Woo Kim ,  Jeong-Gil Lee ,  Yong-Il Kwon ,  Myoung-Bum Lee

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/66 ,  H01L27/115 ,  H01L21/768

CPC classification number: H01L29/78 ,  H01L21/76805 ,  H01L21/76831 ,  H01L27/11529 ,  H01L29/66825

Abstract: A memory device includes a gate structure, a contact plug, and a spacer. The gate structure includes first and second conductive layer patterns sequentially stacked on a substrate. The contact plug passes through the second conductive layer pattern, and a sidewall of the contact plug directly contacts at least a portion of the second conductive layer pattern. The spacer surrounds a portion of the sidewall of the contact plug and contacting the gate structure.

Abstract translation: 存储器件包括栅极结构，接触插塞和间隔物。 栅极结构包括顺序地堆叠在衬底上的第一和第二导电层图案。 接触插塞穿过第二导电层图案，并且接触插塞的侧壁直接接触第二导电层图案的至少一部分。 间隔件围绕接触塞的侧壁的一部分并接触门结构。