公开(公告)号：US09299826B2

公开(公告)日：2016-03-29

申请号：US14204441

申请日：2014-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hauk Han ,  Il-Woo Kim ,  Jeong-Gil Lee ,  Yong-Il Kwon ,  Myoung-Bum Lee

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/66 ,  H01L27/115 ,  H01L21/768

CPC classification number: H01L29/78 ,  H01L21/76805 ,  H01L21/76831 ,  H01L27/11529 ,  H01L29/66825

Abstract: A memory device includes a gate structure, a contact plug, and a spacer. The gate structure includes first and second conductive layer patterns sequentially stacked on a substrate. The contact plug passes through the second conductive layer pattern, and a sidewall of the contact plug directly contacts at least a portion of the second conductive layer pattern. The spacer surrounds a portion of the sidewall of the contact plug and contacting the gate structure.

Abstract translation: 存储器件包括栅极结构，接触插塞和间隔物。 栅极结构包括顺序地堆叠在衬底上的第一和第二导电层图案。 接触插塞穿过第二导电层图案，并且接触插塞的侧壁直接接触第二导电层图案的至少一部分。 间隔件围绕接触塞的侧壁的一部分并接触门结构。

公开(公告)号：US11316799B2

公开(公告)日：2022-04-26

申请号：US16848098

申请日：2020-04-14

Applicant: Samsung Electronics Co., Ltd. ,  UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY

Inventor： Sung-Oh Hwang ,  Kyung-Mo Park ,  Jae-Yeon Song ,  Doug Young Suh ,  Yong-Il Kwon

IPC: H04L12/927 ,  H04L47/80 ,  H04N21/2381 ,  H04N21/647 ,  H04N21/2343 ,  H04N21/845 ,  H04L43/0829 ,  H04L43/0852 ,  H04L43/0888 ,  H04L69/325

Abstract: An apparatus and method for transmitting a multimedia data packet are provided. The method includes receiving Bottom-up Network Abstraction Layer (B-NAL) information from a network entity, determining a media data quality based on the received B-NAL information and generating media data having the determined media data quality, and generating a packet including the generated media data and transmitting the packet to the network entity.

公开(公告)号：US10750222B2

公开(公告)日：2020-08-18

申请号：US16105505

申请日：2018-08-20

Applicant: Samsung Electronics Co., Ltd. ,  UNIVERSITY—INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY

Inventor： Sung-Oh Hwang ,  Doug-Young Suh ,  Kyung-Mo Park ,  Yong-Hun Lee ,  Jun-Oh Kim ,  Jae-Yeon Song ,  Yong-Il Kwon

IPC: H04N21/258 ,  H04N21/24 ,  H04N21/61 ,  H04N21/63 ,  H04N21/6373 ,  H04N21/633 ,  H04N21/6338 ,  H04N21/6371 ,  H04N21/60 ,  H04N21/637 ,  H04N21/239 ,  H04N21/472

Abstract: An apparatus and a method for providing an adaptive multimedia service in a mobile communication system are provided. The method of providing a multimedia service includes collecting user-preference-aware information, device-capability-aware information, and network-aware information, generating a packet according to a correlation among the user-preference-aware information, the device-capability-aware information, and the network-aware information, and providing a multimedia service according to the generated packet.

公开(公告)号：US08928092B2

公开(公告)日：2015-01-06

申请号：US13940721

申请日：2013-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hauk Han ,  Yong-Il Kwon ,  JungSuk Oh ,  Tae sun Ryu ,  Jeonggil Lee

IPC: H01L27/088 ,  H01L29/788 ,  H01L23/52 ,  H01L21/28 ,  H01L27/115

CPC classification number: H01L27/11531 ,  H01L21/28273 ,  H01L23/52 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11536 ,  H01L27/11539 ,  H01L29/42328 ,  H01L29/4238 ,  H01L29/4941 ,  H01L29/788 ,  H01L29/7881 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a lower insulating pattern on a semiconductor substrate, a lower gate pattern on the lower insulating pattern and formed of a doped polysilicon layer, a residual insulating pattern with an opening exposing a portion of a top surface of the lower gate pattern, an upper gate pattern on the residual insulating pattern, the upper gate pattern filling the opening, and a diffusion barrier pattern in contact with the portion of the top surface of the lower gate pattern and extending between the residual insulating pattern and the upper gate pattern.

Abstract translation: 半导体器件包括在半导体衬底上的下绝缘图案，下绝缘图案上的下栅极图案和由掺杂多晶硅层形成的残留绝缘图案，具有露出下栅极图案的顶表面的一部分的开口， 剩余绝缘图案上的上栅极图案，填充开口的上栅极图案，以及与下栅极图案的顶表面的部分接触并在残留绝缘图案和上栅极图案之间延伸的扩散阻挡图案。