CHIP ON FILM PACKAGE AND DISPLAY APPARATUS INCLUDING THE SAME

    公开(公告)号:US20240162213A1

    公开(公告)日:2024-05-16

    申请号:US18376467

    申请日:2023-10-04

    CPC classification number: H01L25/18 H01L23/552 H10K59/90 H01L23/5387

    Abstract: A display apparatus includes a silicon substrate including a first surface and a second surface opposite thereto and including an opaque material, a display panel disposed on the first surface of the silicon substrate, a base film including a third surface and a fourth surface opposite thereto, the fourth surface having a portion facing the first surface of the silicon substrate, a display driving chip mounted on the base film, a connector disposed on a portion of the third surface of the base film, and a driving printed circuit board (PCB) electrically connected with the base film, wherein the silicon substrate corresponds to the base film in a one-to-one relationship, and a length of an edge of the base film overlapping the silicon substrate is about 90% of a length of an edge of the silicon substrate parallel to the edge of the base film.

    SEMICONDUCTOR PACKAGE INCLUDING A FILM SUBSTRATE

    公开(公告)号:US20250062178A1

    公开(公告)日:2025-02-20

    申请号:US18748463

    申请日:2024-06-20

    Abstract: A semiconductor package includes: a film substrate having a chip mounting area, and extending in a first direction; a plurality of wirings provided on the film substrate, and including a metal lead portion having an inner lead bonding portion and an outer lead bonding portion, wherein the inner lead bonding portion is at least partially disposed within the chip mounting area, and the outer lead bonding portion from the inner lead bonding portion; an upper insulating layer covering the plurality of wirings, and having a mounting area opening that exposes at least a portion of the inner lead bonding portion; a semiconductor chip disposed on the chip mounting area of the film substrate, and bonded to the exposed inner lead bonding portion; and a heat dissipation member on the upper insulating layer, and including a plurality of first extension patterns extending within the through opening to cover the semiconductor chip.

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