Plasma processing device
    4.
    发明授权

    公开(公告)号:US10276349B2

    公开(公告)日:2019-04-30

    申请号:US14699443

    申请日:2015-04-29

    Abstract: A plasma processing device is provided. The plasma processing device includes a plate formed between a window covering a top portion of a chamber where plasma processing is performed and an antenna generating a magnetic field, and a fluid supply unit supplying a fluid for controlling temperatures of the window and the antenna, wherein the plate includes first and second regions supplied with the fluid, and the fluid supply unit independently controls the first and second regions.

    Plasma Processing Device
    5.
    发明申请
    Plasma Processing Device 审中-公开
    等离子处理装置

    公开(公告)号:US20160104604A1

    公开(公告)日:2016-04-14

    申请号:US14699443

    申请日:2015-04-29

    CPC classification number: H01J37/32119 H01J37/321 H01J37/32522 H01J37/3299

    Abstract: A plasma processing device is provided. The plasma processing device includes a plate formed between a window covering a top portion of a chamber where plasma processing is performed and an antenna generating a magnetic field, and a fluid supply unit supplying a fluid for controlling temperatures of the window and the antenna, wherein the plate includes first and second regions supplied with the fluid, and the fluid supply unit independently controls the first and second regions.

    Abstract translation: 提供等离子体处理装置。 等离子体处理装置包括形成在覆盖进行等离子体处理的室的顶部的窗口和产生磁场的天线之间的板和供应用于控制窗口和天线的温度的流体的流体供应单元,其中 板包括被供应流体的第一和第二区域,并且流体供应单元独立地控制第一和第二区域。

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