公开(公告)号：US10804120B2

公开(公告)日：2020-10-13

申请号：US15652345

申请日：2017-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong-Moon Ha ,  Min-Kyu Sung ,  Seung-Hee Cho ,  Seong-Chul Choi ,  Kyung-Sun Kim ,  Sang-Ho Lee

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/44

Abstract: A temperature controller of a plasma-processing apparatus including a heating unit and a cooling unit. The heating unit is configured to heat a liner on an inner surface of a plasma chamber in which a plasma is formed. The cooling unit is configured to cool the liner to controls a temperature of an upper electrode in the plasma chamber.

公开(公告)号：US10276349B2

公开(公告)日：2019-04-30

申请号：US14699443

申请日：2015-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak-Young Kim ,  Ji-Myoung Lee ,  Ji-Hee Kim ,  Doug-Yong Sung ,  Kyeong-Seok Jeong ,  Seong-Chul Choi

IPC: H01J37/32

Abstract: A plasma processing device is provided. The plasma processing device includes a plate formed between a window covering a top portion of a chamber where plasma processing is performed and an antenna generating a magnetic field, and a fluid supply unit supplying a fluid for controlling temperatures of the window and the antenna, wherein the plate includes first and second regions supplied with the fluid, and the fluid supply unit independently controls the first and second regions.

公开(公告)号：US20160104604A1

公开(公告)日：2016-04-14

申请号：US14699443

申请日：2015-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak-Young Kim ,  Ji-Myoung Lee ,  Ji-Hee Kim ,  Doug-Yong Sung ,  Kyeong-Seok Jeong ,  Seong-Chul Choi

IPC: H01J37/32

CPC classification number: H01J37/32119 ,  H01J37/321 ,  H01J37/32522 ,  H01J37/3299

Abstract: A plasma processing device is provided. The plasma processing device includes a plate formed between a window covering a top portion of a chamber where plasma processing is performed and an antenna generating a magnetic field, and a fluid supply unit supplying a fluid for controlling temperatures of the window and the antenna, wherein the plate includes first and second regions supplied with the fluid, and the fluid supply unit independently controls the first and second regions.

Abstract translation: 提供等离子体处理装置。 等离子体处理装置包括形成在覆盖进行等离子体处理的室的顶部的窗口和产生磁场的天线之间的板和供应用于控制窗口和天线的温度的流体的流体供应单元，其中 板包括被供应流体的第一和第二区域，并且流体供应单元独立地控制第一和第二区域。