公开(公告)号：US20150206716A1

公开(公告)日：2015-07-23

申请号：US14601878

申请日：2015-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUNGJOON KIM ,  Vasily Pashkovskiy ,  Sang-Heon Lee ,  Sang-Jean Jeon ,  Doug-Yong Sung ,  Yun-Kwang Jeon ,  Bong-Seong Kim

IPC: H01J37/32 ,  C23C14/22 ,  C23C16/505

CPC classification number: H01J37/32146 ,  C23C16/515 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32183

Abstract: A plasma generating apparatus includes a chamber that encloses a reaction space that is isolated from the outside; a wafer chuck disposed in a lower portion of the chamber; a plasma generation unit disposed in an upper portion of the chamber; a first radio-frequency (RF) power source that supplies RF power to the plasma generation unit; a first matching unit interposed between the first RF power source and the plasma generation unit; a second RF power source that supplies RF power to the wafer chuck; and a second matching unit interposed between the second RF power source and the wafer chuck. The first RF power source supplies a first pulse power level and a different second pulse power level at different times.

Abstract translation: 等离子体发生装置包括：室，其包围与外部隔离的反应空间; 设置在所述室的下部的晶片卡盘; 设置在所述室的上部的等离子体产生单元; 向所述等离子体发生单元提供RF功率的第一射频（RF）电源; 介于所述第一RF电源和所述等离子体产生单元之间的第一匹配单元; 向晶片卡盘提供RF功率的第二RF电源; 以及插入在第二RF电源和晶片卡盘之间的第二匹配单元。 第一RF电源在不同时间提供第一脉冲功率电平和不同的第二脉冲功率电平。

公开(公告)号：US10276349B2

公开(公告)日：2019-04-30

申请号：US14699443

申请日：2015-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak-Young Kim ,  Ji-Myoung Lee ,  Ji-Hee Kim ,  Doug-Yong Sung ,  Kyeong-Seok Jeong ,  Seong-Chul Choi

IPC: H01J37/32

Abstract: A plasma processing device is provided. The plasma processing device includes a plate formed between a window covering a top portion of a chamber where plasma processing is performed and an antenna generating a magnetic field, and a fluid supply unit supplying a fluid for controlling temperatures of the window and the antenna, wherein the plate includes first and second regions supplied with the fluid, and the fluid supply unit independently controls the first and second regions.

公开(公告)号：US09378931B2

公开(公告)日：2016-06-28

申请号：US14796188

申请日：2015-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ohyung Kwon ,  Namjun Kang ,  Doug-Yong Sung ,  Jung-hyun Cho

IPC: H01J7/24 ,  H01J37/32 ,  H05B31/26

CPC classification number: H01J37/32183 ,  H01J7/24 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32926 ,  H01J2237/327 ,  H01J2237/334 ,  H05B31/26

Abstract: A pulse plasma apparatus includes a process chamber, source RF generator configured to supply first and second level RF pulse power having first and second duty cycles to an upper electrode of the process chamber, a reflected power indicator configured to indicate reflection RF power, a first matching network, and a controller. The first matching network is configured to match an impedance of the process chamber with an impedance of the source RF generator as a first or second matching capacitance value, respectively when the first level RF pulse power or second level RF pulse power is supplied, respectively. The controller is configured to calculate a third matching capacitance value based on the first and second matching capacitance values and a ratio of the first and second duty cycles, provide the third matching capacitance values to the first matching network, and control the source RF generator and first matching network.

Abstract translation: 脉冲等离子体装置包括处理室，源RF发生器，被配置为向处理室的上电极提供具有第一和第二占空比的第一和第二电平的RF脉冲功率，被配置为指示反射RF功率的反射功率指示器，第一 匹配网络和控制器。 当分别提供第一级RF脉冲功率或第二级RF脉冲功率时，第一匹配网络被配置为将处理室的阻抗与源RF发生器的阻抗分别匹配为第一或第二匹配电容值。 控制器被配置为基于第一和第二匹配电容值和第一和第二占空比的比率来计算第三匹配电容值，向第一匹配网络提供第三匹配电容值，并且控制源RF发生器和 第一匹配网络。

公开(公告)号：US20160104604A1

公开(公告)日：2016-04-14

申请号：US14699443

申请日：2015-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak-Young Kim ,  Ji-Myoung Lee ,  Ji-Hee Kim ,  Doug-Yong Sung ,  Kyeong-Seok Jeong ,  Seong-Chul Choi

IPC: H01J37/32

CPC classification number: H01J37/32119 ,  H01J37/321 ,  H01J37/32522 ,  H01J37/3299

Abstract: A plasma processing device is provided. The plasma processing device includes a plate formed between a window covering a top portion of a chamber where plasma processing is performed and an antenna generating a magnetic field, and a fluid supply unit supplying a fluid for controlling temperatures of the window and the antenna, wherein the plate includes first and second regions supplied with the fluid, and the fluid supply unit independently controls the first and second regions.

Abstract translation: 提供等离子体处理装置。 等离子体处理装置包括形成在覆盖进行等离子体处理的室的顶部的窗口和产生磁场的天线之间的板和供应用于控制窗口和天线的温度的流体的流体供应单元，其中 板包括被供应流体的第一和第二区域，并且流体供应单元独立地控制第一和第二区域。