公开(公告)号：US20140235000A1

公开(公告)日：2014-08-21

申请号：US14098105

申请日：2013-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Yoon KIM ,  Seung Jae Lee ,  Ha Yeong Son ,  Jin Gi Hong ,  Seong Deok Hwang

IPC: H01L33/58 ,  H01L21/683

CPC classification number: H01L21/6836 ,  H01L33/0095 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2933/0041

Abstract: A method of grinding a substrate is provided. A substrate including a first main surface having a semiconductor layer formed thereon and a second main surface opposed to the first main surface is prepared. A support film is attached to the first main surface using a glue. The second main surface of the substrate is ground so as to reduce a thickness of the substrate. The support film is removed from the first main surface by applying force to the support film in a non-traverse direction.

Abstract translation: 提供了研磨基板的方法。 制备包括其上形成有半导体层的第一主表面和与第一主表面相对的第二主表面的衬底。 使用胶水将支撑膜附接到第一主表面。 研磨衬底的第二主表面以减小衬底的厚度。 通过在非横向方向上对支撑膜施加力而将支撑膜从第一主表面移除。

公开(公告)号：US09165817B2

公开(公告)日：2015-10-20

申请号：US14098105

申请日：2013-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Yoon Kim ,  Seung Jae Lee ,  Ha Yeong Son ,  Jin Gi Hong ,  Seong Deok Hwang

IPC: H01L21/00 ,  H01L21/683 ,  H01L33/00

CPC classification number: H01L21/6836 ,  H01L33/0095 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2933/0041

Abstract: A method of grinding a substrate is provided. A substrate including a first main surface having a semiconductor layer formed thereon and a second main surface opposed to the first main surface is prepared. A support film is attached to the first main surface using a glue. The second main surface of the substrate is ground so as to reduce a thickness of the substrate. The support film is removed from the first main surface by applying force to the support film in a non-traverse direction.

Abstract translation: 提供了研磨基板的方法。 制备包括其上形成有半导体层的第一主表面和与第一主表面相对的第二主表面的衬底。 使用胶水将支撑膜附接到第一主表面。 研磨衬底的第二主表面以减小衬底的厚度。 通过在非横向方向上对支撑膜施加力而将支撑膜从第一主表面移除。

公开(公告)号：US09450151B2

公开(公告)日：2016-09-20

申请号：US14717942

申请日：2015-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Pun Jae Choi ,  Young Soo Park ,  Yung Ho Ryu ,  Tae Young Park ,  Jin Gi Hong

IPC: H01L21/00 ,  H01L33/38 ,  H01L33/42 ,  H01L33/40 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.

Abstract translation: 半导体发光器件包括具有彼此相对的第一表面和第二表面的层压半导体结构，分别形成第一表面和第二表面的第一导电类型半导体层和第二导电型半导体层， 活动层 第一和第二电极分别设置在叠层半导体结构的第一表面和层叠半导体结构的第二表面上。 连接电极延伸到要连接到第二电极的第一表面。 支撑基板设置在第二电极上，绝缘层使连接电极与有源层和第一导电型半导体层绝缘。