公开(公告)号：US10388693B2

公开(公告)日：2019-08-20

申请号：US15984508

申请日：2018-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Goo Cha ,  Yong Il Kim ,  Young Soo Park

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/62 ,  H01L25/065 ,  H01L33/50 ,  H01L33/52 ,  H01L33/44 ,  H01L25/075

Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter. Exemplary display panels and methods of manufacturing semiconductor devices and display panels are also disclosed.

公开(公告)号：US10170666B2

公开(公告)日：2019-01-01

申请号：US15389808

申请日：2016-12-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo Cha ,  Yong Il Kim ,  Young Soo Park ,  Sung Hyun Sim ,  Hanul Yoo

IPC: H01L33/08 ,  G09G3/20 ,  H01L33/38 ,  H01L33/50 ,  H01L33/58 ,  H01L25/075 ,  G09G3/32 ,  H01L33/46 ,  H01L33/62

Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.

公开(公告)号：US09947530B2

公开(公告)日：2018-04-17

申请号：US15399898

申请日：2017-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Jo Tak ,  Sam Mook Kang ,  Mi Hyun Kim ,  Jun Youn Kim ,  Young Soo Park

IPC: H01L21/20 ,  H01L21/205 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/304 ,  H01L21/30604

Abstract: A method of manufacturing a nitride semiconductor substrate includes providing a silicon substrate having a first surface and a second surface opposing each other, growing a nitride template on the first surface of the silicon substrate in a first growth chamber, in which a silicon compound layer is formed on the second surface of the silicon substrate in a growth process of the nitride template, removing the silicon compound layer from the second surface of the silicon substrate, growing a group III nitride single crystal on the nitride template in a second growth chamber, and removing the silicon substrate from the second growth chamber.

公开(公告)号：US09899565B2

公开(公告)日：2018-02-20

申请号：US15183869

申请日：2016-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Jo Tak ,  Sam Mook Kang ,  Mi Hyun Kim ,  Jun Youn Kim ,  Young Soo Park ,  Misaichi Takeuchi

IPC: H01L33/00 ,  H01L21/683 ,  H01L21/306 ,  H01L21/78 ,  H01L21/02

CPC classification number: H01L33/0075 ,  H01L21/02005 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/7806 ,  H01L33/0066 ,  H01L33/0079

Abstract: A method of manufacturing a semiconductor substrate may include forming a first semiconductor layer on a growth substrate, forming a second semiconductor layer on the first semiconductor layer, forming a plurality of voids in the first semiconductor layer by removing portions of the first semiconductor layer that are exposed by a plurality of trenches in the second semiconductor layer, forming a third semiconductor layer on the second semiconductor layer and covering the plurality of trenches, and separating the second and third semiconductor layers from the growth substrate. on the first semiconductor layer. The third semiconductor layer are grown from the second semiconductor layer and extend above the second semiconductor layer.

公开(公告)号：US10475957B2

公开(公告)日：2019-11-12

申请号：US16190538

申请日：2018-11-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo Cha ,  Yong Il Kim ,  Young Soo Park ,  Sung Hyun Sim ,  Hanul Yoo

IPC: H01L33/08 ,  G09G3/20 ,  H01L33/38 ,  H01L33/50 ,  H01L33/58 ,  H01L25/075 ,  G09G3/32 ,  H01L33/46 ,  H01L33/62

Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.

公开(公告)号：US09450151B2

公开(公告)日：2016-09-20

申请号：US14717942

申请日：2015-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Pun Jae Choi ,  Young Soo Park ,  Yung Ho Ryu ,  Tae Young Park ,  Jin Gi Hong

IPC: H01L21/00 ,  H01L33/38 ,  H01L33/42 ,  H01L33/40 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.

Abstract translation: 半导体发光器件包括具有彼此相对的第一表面和第二表面的层压半导体结构，分别形成第一表面和第二表面的第一导电类型半导体层和第二导电型半导体层， 活动层 第一和第二电极分别设置在叠层半导体结构的第一表面和层叠半导体结构的第二表面上。 连接电极延伸到要连接到第二电极的第一表面。 支撑基板设置在第二电极上，绝缘层使连接电极与有源层和第一导电型半导体层绝缘。

公开(公告)号：US11251225B2

公开(公告)日：2022-02-15

申请号：US16864954

申请日：2020-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Goo Cha ,  Yong Il Kim ,  Young Soo Park

IPC: H01L33/00 ,  H01L27/15 ,  H01L25/065 ,  H01L33/50 ,  H01L33/52 ,  H01L33/62 ,  H01L25/075 ,  H01L33/44

Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter. Exemplary display panels and methods of manufacturing semiconductor devices and display panels are also disclosed.

公开(公告)号：US09911381B2

公开(公告)日：2018-03-06

申请号：US14825670

申请日：2015-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Goo Cha ,  Young Soo Park ,  Sung Hyun Sim ,  Je Won Kim

IPC: G09G3/32 ,  G09G3/3233 ,  H01L27/15

CPC classification number: G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0452 ,  G09G2300/0852 ,  G09G2310/0297 ,  H01L27/156

Abstract: There is provided a display device including a plurality of pixels. Each of the plurality of pixels may include a plurality of switching devices, at least one capacitor, and a semiconductor light-emitting device. The display device may further include a driving circuit configured to apply currents to the semiconductor light-emitting device through the plurality of switching devices and at least one capacitor. The semiconductor light-emitting device may emit red light, green light, and blue light through the currents applied by the driving circuit.

公开(公告)号：US10763399B2

公开(公告)日：2020-09-01

申请号：US15684144

申请日：2017-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Gun Lee ,  Yong Il Kim ,  Young Soo Park ,  Jin Sub Lee ,  Wan Tae Lim

IPC: H01L33/12 ,  H01L33/46 ,  H01L27/15 ,  H01L33/50 ,  H01L25/075 ,  H01L33/44

Abstract: A light emitting device package includes a light emitting structure including a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of the first to third light emitting cells including an active layer to emit light of a first wavelength in a first direction and being separated from each other in a second direction, orthogonal to the first direction, a first light adjusting portion including a first wavelength conversion layer in a first recess portion of the first light emitting cell, the first wavelength conversion layer to convert light of the first wavelength to light of a second wavelength, and a second light adjusting portion including a second wavelength conversion layer in a second recess portion of the second light emitting cell, the second wavelength conversion layer to convert light of the first wavelength to light of a third wavelength.

公开(公告)号：US10671243B2

公开(公告)日：2020-06-02

申请号：US15215060

申请日：2016-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan Sang Ryu ,  Young Soo Park ,  Gang Youl Yu ,  Yong Sang Yun

IPC: G06F3/0482 ,  G06F21/34 ,  G06F3/0485 ,  G06F3/0488 ,  G06F3/0481 ,  G06F3/0484

Abstract: An apparatus and method for screen operation are provided. The apparatus includes an electronic device. The electronic device includes a display on which one or more objects are displayed, and a processor for controlling a display state of the display. The processor adjusts, based on a location indicated by a received input event, a display location of the one or more objects displayed on the display.