公开(公告)号：US20230245887A1

公开(公告)日：2023-08-03

申请号：US18093653

申请日：2023-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yong PARK ,  Jin-Hyuk KIM ,  Jin-Hong PARK ,  Sejin KYUNG

IPC: H01L21/02 ,  H01L27/146 ,  H01L29/24 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L21/02614 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02568 ,  H01L27/14616 ,  H01L27/1461 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/775 ,  H01L29/0673

Abstract: Disclosed are methods of forming PN junction structures, methods of fabricating semiconductor devices using the same, and semiconductor devices fabricated by the same. The method of forming a PN junction structure includes: forming on a substrate a first material layer that includes first transition metal atoms and first chalcogen atoms, loading the first material layer into a process chamber and supplying a gas of second chalcogen atoms, and forming a second material layer by substituting the second chalcogen atoms for the first chalcogen atoms on a selected portion of the first material layer. The first material layer has one of n-type conductivity and p-type conductivity. The second material layer has the other of the n-type conductivity and the p-type conductivity.